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1.发明公开Bolometer and method for measurement of electromagnetic radiation 审中-公开Bolometer und Verfahren zum Messen elektromagnetischer Strahlung
公开(公告)号：EP2942609A1
公开(公告)日：2015-11-11
申请号：EP14167385.5
申请日：2014-05-07
申请人： ams AG
发明人： Röhrer, Georg , Carniello, Sara
摘要： A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).
摘要翻译： 测辐射热计（10）包括由第一和第二悬架梁（12,13）悬挂的第一和第二悬架梁（12,13）和半导体部分（11），并且包括第一区域（17） 第一导电类型和第二导电类型的第二区域（18）。 第一区域（17）包括第一三角形（21）或至少两条条纹（40,41）或岛状物（60,61），每条带有第二区域（18）的非短路二极管（20） ）。
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2.发明公开Semiconductor device with surface integrated focusing element 有权Halbleitervorrichtung mitoberflächenintegriertemFokussierelement
公开(公告)号：EP2908341A1
公开(公告)日：2015-08-19
申请号：EP14155574.8
申请日：2014-02-18
申请人： ams AG
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14634 , H01L27/14645 , H01L27/14649 , H01L27/14687 , H01L27/14689 , H01L27/1469 , H01L27/3269 , H01L31/02016 , H01L31/0203 , H01L2924/1815
摘要： The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
摘要翻译： 半导体器件包括半导体衬底（1），布置在衬底的主表面（10）处的传感器或传感器阵列（2），布置在主表面上或上面的集成电路（3）和聚焦元件 4）形成在与主表面相对的基板的另一个主表面（11）内。 聚焦元件优选地布置成与传感器或传感器阵列（2）相对，例如可以是光电传感器或光电检测器或光电传感器或光电检测器阵列。
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3.发明公开Semiconductor device with through-substrate via and method of producing a semiconductor device with through-substrate via 审中-公开通过基板的通孔和制造具有通孔的基底连续的半导体器件的方法具有连续的半导体器件
公开(公告)号：EP2889901A1
公开(公告)日：2015-07-01
申请号：EP13199683.7
申请日：2013-12-27
申请人： ams AG
发明人： Schrank, Franz , Carniello, Sara , Enichlmair, Hubert , Kraft, Jochen , Löffler, Bernhard , Holzhaider, Rainer
IPC分类号： H01L21/768 , H01L23/48 , H01L27/146 , H01L23/00
CPC分类号： H01L31/022408 , H01L21/76898 , H01L23/3192 , H01L23/481 , H01L23/562 , H01L27/14636 , H01L31/02165 , H01L31/103 , H01L31/1804 , H01L2924/0002 , H01L2924/00
摘要： A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.
摘要翻译： 介电层（2）被布置在半导体衬底（1）的主表面（10）上，以及钝化层（6）设置在所述电介质层上。 的金属层（3）在开口（12）被嵌入在介电层上方的基板，和金属化（14）在所述开口被布置。 金属化接触金属层和形成通孔的基板，以在基板的后表面（11）。 包括至少一个层的层或层序列（7,8，9）进一步被布置在开口的上方在钝化层上。 以这种方式，通孔的基板的底是稳定的。 插头（17）可另外在开口被布置，而不填充所述开口。
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4.发明公开Semiconductor device with through-substrate via of enhanced conductivity and corresponding fabrication method 有权具有通孔镀敷具有改进的导电性和其制造方法的半导体器件
公开(公告)号：EP2793254A1
公开(公告)日：2014-10-22
申请号：EP13163968.4
申请日：2013-04-16
申请人： AMS AG
发明人： Kraft, Jochen , Carniello, Sara , Schrems, Martin
IPC分类号： H01L21/768 , H01L23/48 , H01L21/74
CPC分类号： H01L21/76898 , H01L21/743 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device comprises a substrate (1) with an upper surface (20), the substrate (1) including a semiconductor layer (3), a connection pad (7) below the semiconductor layer (3) opposite the upper surface (20), a via opening (9) with a sidewall (19) in the semiconductor layer (3) above the connection pad (7), and an electrically conductive via layer (6) arranged at the sidewall (19) and in contact with the connection pad (7). An electrically conductive upper via layer (26) is arranged at the sidewall (19) on or above the via layer (6) and is electrically conductively connected to the connection pad (7).
摘要翻译： 衬底的半导体器件包括一个基片（1），其具有上表面（20），所述（1）包括一半导体层（3），连接焊盘与半导体层（7）（3）下面相对的上表面（20） 中，经由开口（9）与连接焊盘（7）上方的半导体层（3）的侧壁（19）中，在经由层导电（6）在所述侧壁（19）布置并且在与连接接触 垫（7）。 导电上层通路层（26）在所述侧壁（19）上或上方设置在所述通孔层（6）和导电性地电连接到连接焊盘（7）。
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公开(公告)号：EP2908341B1
公开(公告)日：2018-07-11
申请号：EP14155574.8
申请日：2014-02-18
申请人： ams AG
IPC分类号： H01L27/146 , H01L31/0203
CPC分类号： H01L27/1464 , H01L27/14618 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14634 , H01L27/14645 , H01L27/14649 , H01L27/14687 , H01L27/14689 , H01L27/1469 , H01L27/3269 , H01L31/02016 , H01L31/0203 , H01L2924/1815
摘要： The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
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6.发明授权Semiconductor device with through-substrate via of enhanced conductivity and corresponding fabrication method 有权具有通孔镀敷具有改进的导电性和其制造方法的半导体器件
公开(公告)号：EP2793254B1
公开(公告)日：2015-10-21
申请号：EP13163968.4
申请日：2013-04-16
申请人： AMS AG
发明人： Kraft, Jochen , Carniello, Sara , Schrems, Martin
IPC分类号： H01L21/768 , H01L23/48 , H01L21/74
CPC分类号： H01L21/76898 , H01L21/743 , H01L23/481 , H01L2924/0002 , H01L2924/00
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