摘要:
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding output voltage in response to the input light stimulus. The output voltage may correspond linearly to the magnitude of the input light stimulus over a linear operating region and logarithmically to the magnitude of the input light stimulus over a logarithmic operating region. In this manner, the photosensitive pixel with gain stage may be both sensitive to input light stimuli over the linear operating region and may exhibit dynamic range enabling non-saturated response to input light stimuli over the logarithmic operating region.
摘要:
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding output voltage in response to the input light stimulus. The output voltage may correspond linearly to the magnitude of the input light stimulus over a linear operating region and logarithmically to the magnitude of the input light stimulus over a logarithmic operating region. In this manner, the photosensitive pixel with gain stage may be both sensitive to input light stimuli over the linear operating region and may exhibit dynamic range enabling non-saturated response to input light stimuli over the logarithmic operating region.
摘要:
The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
摘要:
The semiconductor device comprises a semiconductor substrate (1), a sensor or sensor array (2) arranged at a main surface (10) of the substrate, an integrated circuit (3) arranged at or above the main surface, and a focusing element (4) formed within a further main surface (11) of the substrate opposite the main surface. The focusing element is preferably arranged opposite the sensor or sensor array (2), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance.
摘要:
A semiconductor radiation detector capable of measuring a γ-ray energy spectrum at 122 keV and 662 keV and having an energy resolution of no greater than 8 % with respect to 122 keV γ-rays, a nuclear medicine diagnostic device using the detector and a method for producing the semiconductor radiation detector are provided. A semiconductor radiation detector 101 uses a semiconductor crystal 111 sandwiched by a cathode 112 and an anode 113. The semiconductor crystal 111 is configured from a thallium bromide single crystal in which the concentration of lead as an impurity is less than 0.1 ppm, the full width at half maximum of the (110) rocking curve in the X-ray diffraction in specimen tilting angle scan is no greater than 1.6 degrees, the full width at half maximum in specimen in-plane rotation angle scan is no greater than 3.5 degrees, and the full width at half maximum in X-ray incident angle scan is no greater than 1.3 degrees.
摘要:
The invention discloses a photo detector (300, 500) with first (101, 103, 111) and second (102, 110) groups of electrodes. The electrodes of each group are connected to a first common conductor for the group, and are located on a layer (115) of photosensitive material. The electrodes are parallel to and interlaced with each other. The first common conductors (301, 303) are essentially plane and arranged as upper (303) and a lower (301) conductors parallel to and overlapping each other separated by a dielectric material (401), so that the two first common conductors (301, 303) form a signal electrode and a ground plane of a first microstrip line. The first microstrip line acts as a first combiner for currents induced in the electrodes of the two groups and as a matching network for the electrodes and for a load (510) which can be connected to the photo detector.
摘要:
Methods and systems for process and temperature compensation in a transimpedance amplifier using a dual replica and servo loop is disclosed and may include a transimpedance amplifier (TIA) circuit comprising a first TIA, a second TIA, a third TIA, and a control loop. The first TIA comprises a fixed feedback resistance and the second and third TIAs each comprise a configurable feedback impedance. The control loop comprises a gain stage with inputs coupled to outputs of the first and second TIAs and with an output coupled to the configurable feedback impedance of the second and third TIAs. The circuit may be operable to configure a gain level of the first TIA based on the fixed feedback resistance and a reference current applied at an input to the first TIA, and configure a gain level of the second and third TIAs based on a control voltage generated by the gain stage.