公开(公告)号：EP1685585A1

公开(公告)日：2006-08-02

申请号：EP04795911.9

申请日：2004-10-20

申请人： APPLIED MATERIALS, INC.

发明人： RAMACHANDRAN, Balasubramanian ,  RANISH, Joseph, M. ,  JALLEPALLY, Ravi ,  RAMAMURTHY, Sundar ,  ACHUTHARAMAN, Raman ,  HAAS, Brian ,  HUNTER, Aaron

IPC分类号： H01L21/00

CPC分类号： H01L21/67103

摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

公开(公告)号：EP1196938A2

公开(公告)日：2002-04-17

申请号：EP00923564.9

申请日：2000-04-21

申请人： Applied Materials, Inc.

发明人： NOBLE, David, B. ,  JALLEPALLY, Ravi ,  D'ASTICI, Nathan ,  MINER, Gary ,  SAHIN, Turgut ,  XING, Guangcai ,  BHATNAGAR, Yashraj

IPC分类号： H01J37/00

CPC分类号： H01J37/32357 ,  C23C8/36 ,  C23C16/452 ,  H01J2237/3387

摘要： An apparatus and method for exposing a substrate to plasma including a first reaction chamber (300) adapted to generate a plasma comprising ions and radicals and a second reaction chamber (200) coupled to the first reaction chamber and adapted to house a substrate at (100). The second reaction chamber is coupled to the first reaction chamber by an inlet member (275) and radicals of the plasma flow through the inlet member into the second reaction chamber.