公开(公告)号：EP0875919A3

公开(公告)日：2003-05-28

申请号：EP98303467.9

申请日：1998-05-01

申请人： Applied Materials, Inc.

发明人： Kholodenko, Arnold ,  Mak, Steven S.Y.

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32642 ,  Y10S156/915 ,  Y10S156/916

摘要： A self-cleaning focus ring ( 90 ) for processing a substrate ( 25 ) in a plasma in a plasma zone, comprises a dielectric barrier ( 92 ) with a focusing surface ( 95 ) for directing and focusing a plasma onto a substrate surface, and an electrical conductor element ( 100 ) abutting at least a portion of the dielectric barrier ( 92 ). The conductor element ( 100 ) is electrically charged to attract the plasma ions toward the focusing surface ( 92 ) of the dielectric barrier ( 92 ), whereby the energetic impingement of the plasma ions on the focusing surface ( 95 ) reduces the formation of deposits on the dielectric barrier ( 92 ).

公开(公告)号：EP0840434A3

公开(公告)日：1998-11-25

申请号：EP97308818.0

申请日：1997-11-04

申请人： Applied Materials, Inc.

发明人： Kholodenko, Arnold ,  Veytser, Alexander

IPC分类号： H02N13/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： The disclosure relates to an apparatus for retaining a workpiece and a method of fabricating same. The apparatus contains an electrostatic chuck (100) having a workpiece support surface (107). The workpiece support surface has protruded regions and non-protruded regions, where a total surface area of the protruded regions is less than a total surface area of the non-protruded regions. To create a topography for the wafer support surface (107) an electrode (112) is etched into a series of one or more rims (106) and (110) rising above a common level. Rims may be continuous or broken into radial segments. After the electrode is etched to a specific topographical pattern and sealed between the dielectric layers (114) and (116), the result is a topography across the wafer support surface (107) that lends additional support to the clamped wafer (111). Thus, the wafer is supported at the outer diameter rim contact area (103) and at least one other point radially inward therefrom (e.g., rims (106) and (110)). To achieve cooling of the wafer during processing, a heat transfer gas, preferably Helium, is pumped into the space (109) between the wafer and the wafer support surface via heat transfer gas ports (108). With the addition of the rims (106) and (110), the interstitial spaces between the wafer and the wafer support surface (107) are eliminated. Thus, the surface area of the wafer exposed solely to the Helium is greatly increased. The topography of the chuck may also be formed by machining the surface of the pedestal prior to adhering and conforming the flex circuit to the surface.

公开(公告)号：EP0867933A3

公开(公告)日：2000-03-15

申请号：EP98301298.0

申请日：1998-02-23

申请人： APPLIED MATERIALS, INC.

发明人： Kholodenko, Arnold ,  Veytser, Alexander M. ,  Shamouilian, Shamouil

IPC分类号： H01L21/68

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： An electrostatic chuck (20) for holding a substrate in a process chamber (80), having a voltage supply terminal (65) for charging the chuck. The chuck includes an electrostatic member (25) comprising at least one electrode (30) covered by an electrically insulated holding surface (40) for holding a substrate thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal (65) to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) is bonded to the electrical contact surface (48), and a terminal surface (60) for electrically contacting the voltage supply terminal, electrically couples the unidirectionally conducting coupler (70) to the voltage supply terminal (65).

公开(公告)号：EP0840360A2

公开(公告)日：1998-05-06

申请号：EP97308864.4

申请日：1997-11-05

申请人： Applied Materials, Inc.

发明人： Kholodenko, Arnold

IPC分类号： H01L21/00

CPC分类号： H01L21/6831 ,  Y10T279/23

摘要： The disclosure relates to an apparatus for supporting a workpiece in semi-conductor processing equipment. The apparatus has either a mechanical or electrostatic chuck (100) having a workpiece support surface (104) that specifically directs the flow of a heat transfer gas from at least one gas supply port (120) towards a drain port (124). A pressure valve (126) beyond the drain port regulates heat transfer gas pressure to ensure adequate gas density for cooling by conduction and adequate gas flow for controlled leakage through the valve.

摘要翻译： 本公开涉及一种用于在半导体加工设备中支撑工件的装置。 该设备具有机械或静电卡盘（100），其具有工件支撑表面（104），其特别地将来自至少一个气体供应端口（120）的传热气体的流动引向排放端口（124）。 超出排水口的压力阀（126）调节传热气体压力，以确保足够的气体密度，用于通过传导和足够的气流进行冷却，以通过阀门进行受控泄漏。

公开(公告)号：EP0875919A2

公开(公告)日：1998-11-04

申请号：EP98303467.9

申请日：1998-05-01

申请人： Applied Materials, Inc.

发明人： Kholodenko, Arnold ,  Mak, Steven S.Y.

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32642 ,  Y10S156/915 ,  Y10S156/916

摘要： A self-cleaning focus ring ( 90 ) for processing a substrate ( 25 ) in a plasma in a plasma zone, comprises a dielectric barrier ( 92 ) with a focusing surface ( 95 ) for directing and focusing a plasma onto a substrate surface, and an electrical conductor element ( 100 ) abutting at least a portion of the dielectric barrier ( 92 ). The conductor element ( 100 ) is electrically charged to attract the plasma ions toward the focusing surface ( 92 ) of the dielectric barrier ( 92 ), whereby the energetic impingement of the plasma ions on the focusing surface ( 95 ) reduces the formation of deposits on the dielectric barrier ( 92 ).

摘要翻译： 用于处理等离子体区域中的等离子体中的衬底（25）的自清洁焦点环（90）包括具有用于将等离子体引导和聚焦到衬底表面上的聚焦表面（95）的电介质阻挡层（92），以及 邻接所述电介质阻挡层（92）的至少一部分的电导体元件（100）。 导电元件（100）被充电以将等离子体离子吸引到电介质阻挡层（92）的聚焦表面（92），由此等离子体离子在聚焦表面（95）上的能量冲击减少了沉积物的形成 电介质势垒（92）。

公开(公告)号：EP0867933A2

公开(公告)日：1998-09-30

申请号：EP98301298.0

申请日：1998-02-23

申请人： APPLIED MATERIALS, INC.

发明人： Kholodenko, Arnold ,  Veytser, Alexander M. ,  Shamouilian, Shamouil

IPC分类号： H01L21/68

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： An electrostatic chuck (20) for holding a substrate in a process chamber (80), having a voltage supply terminal (65) for charging the chuck. The chuck includes an electrostatic member (25) comprising at least one electrode (30) covered by an electrically insulated holding surface (40) for holding a substrate thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal (65) to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) is bonded to the electrical contact surface (48), and a terminal surface (60) for electrically contacting the voltage supply terminal, electrically couples the unidirectionally conducting coupler (70) to the voltage supply terminal (65).

摘要翻译： 一种用于将基板保持在处理室（80）中的静电卡盘（20），具有用于对卡盘充电的电压供给端子（65）。 卡盘包括静电构件（25），该静电构件包括被电绝缘的保持表面（40）覆盖的至少一个电极（30），用于将基板保持在其上，以及用于向电极提供电荷的电接触表面（48）。 单向导电耦合器（70）将静电部件的接触表面（48）电耦合到电压供应端子（65），以基本上仅在从端子到接触表面的单个方向上进行充电。 优选地，具有接合面（55）的电连接器（50）被接合到电接触表面（48），并且用于电接触电压端子的端子表面（60）电耦合单向导电耦合器（70） 到电源端子（65）。

公开(公告)号：EP0840434A2

公开(公告)日：1998-05-06

申请号：EP97308818.0

申请日：1997-11-04

申请人： Applied Materials, Inc.

发明人： Kholodenko, Arnold ,  Veytser, Alexander

IPC分类号： H02N13/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： The disclosure relates to an apparatus for retaining a workpiece and a method of fabricating same. The apparatus contains an electrostatic chuck (100) having a workpiece support surface (107). The workpiece support surface has protruded regions and non-protruded regions, where a total surface area of the protruded regions is less than a total surface area of the non-protruded regions.
To create a topography for the wafer support surface (107) an electrode (112) is etched into a series of one or more rims (106) and (110) rising above a common level. Rims may be continuous or broken into radial segments. After the electrode is etched to a specific topographical pattern and sealed between the dielectric layers (114) and (116), the result is a topography across the wafer support surface (107) that lends additional support to the clamped wafer (111). Thus, the wafer is supported at the outer diameter rim contact area (103) and at least one other point radially inward therefrom (e.g., rims (106) and (110)).
To achieve cooling of the wafer during processing, a heat transfer gas, preferably Helium, is pumped into the space (109) between the wafer and the wafer support surface via heat transfer gas ports (108). With the addition of the rims (106) and (110), the interstitial spaces between the wafer and the wafer support surface (107) are eliminated. Thus, the surface area of the wafer exposed solely to the Helium is greatly increased. The topography of the chuck may also be formed by machining the surface of the pedestal prior to adhering and conforming the flex circuit to the surface.

摘要翻译： 本公开涉及到装置用于保持工件和制造其的方法。 该装置包含具有工件支撑表面（107）的静电吸盘（100）。 的工件支撑表面具有突出区域和非突出区域，其中该突出区域的总表面积小于所述非突出区域的总表面积。 创建用于电极的晶片支撑表面（107）中的拓扑（112）蚀刻成一个或多个串联的轮辋（106）和（110）之上的公共电平上升。 轮辋可以是连续的或者分成径向段。 电极被蚀刻到一个特定的外形图案之后并在介电层（114）和（116）之间的密封，其结果是整个晶片支撑表面上的形貌（107）确实借给额外的支撑，以被夹持的晶片（111）。 因此，晶片在外径轮辋接触区域（103）和至少一个另外的点径向向内从那里支撑（例如，轮辋（106）和（110））。 为了实现在加工过程中晶片的冷却，热传递气体，优选氦，经由传热气体端口（108）泵送到晶片和晶片支撑表面之间的空间（109）。 由于增加了轮辋（106）和（110）的，所述晶片和所述晶片支撑表面（107）之间的间隙空间被消除。 因此，独资暴露于氦晶片的表面积大大增加。 该卡盘的地形因此可以通过在基座的表面加工之前坚持和符合柔性电路到所述表面而形成。