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    Advanced electrolytic polish assisted metal wafer planarization
    1.
    发明公开
    Advanced electrolytic polish assisted metal wafer planarization 审中-公开
    Fortgeschrittene Metall-Halbleiterscheibenplanarisierung mit Hilfe von Elektropolieren

    公开(公告)号：EP1104013A3

    公开(公告)日：2004-04-14

    申请号：EP00310560.8

    申请日：2000-11-29

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： H01L21/321 ,  B24B37/04 ,  C25F3/16

    CPC分类号： H01L21/3212 ,  H01L21/32115

    摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.

    摘要翻译： 在高级电解抛光（AEP）方法中，金属晶片（10）用作阳极电极，另一金属板（65）用作阴极电极。 在预定的阳极溶解电流密度下，对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液（55）中，促使在较高点处的更高的去除速率和较低的去除率降低。 此外，在本发明的另一实施例中，脉冲电解方法（260）其中正电位和负电位交替地施加到阳极和阴极上，进一步促进了表面平坦化。 AEP可以作为第一步，然后进行机械抛光，或者在初始CMP抛光和第三步机械抛光之间使用第二步。 本发明也可以作为铜电镀工艺的最后一步添加，因此可用于制造各种图案化金属晶片。

    Method of planarizing a substrate surface
    2.
    发明公开
    Method of planarizing a substrate surface 审中-公开
    Verfahren zum Planarisieren derOberflächeeines底物

    公开(公告)号：EP1111665A3

    公开(公告)日：2004-01-02

    申请号：EP00311569.8

    申请日：2000-12-21

    申请人： Applied Materials, Inc.

    发明人： Li, Shijian ,  Redeker, Fred C. ,  White, John M. ,  Emani, Ramin

    IPC分类号： H01L21/321 ,  B24B37/04

    CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/3212

    摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu (13) is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu: barrier layer (ta) (12) selectively. Buffing is then conducted to remove the barrier layer. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 and about 150A per minute, and recycling the chemical agent. Embodiments further include flowing and inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

    摘要翻译： 通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。 沉积的Cu（13）用固定的研磨抛光垫以最高的去除速率抛光，然后选择性地以降低的去除速率和高的Cu：阻挡层（ta）（12）抛光。 然后进行抛光以去除阻挡层。 本发明的实施例包括通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施例还包括通过增加化学试剂的流速或控制每分钟约100至约150A的静态蚀刻速率，以及再循环化学试剂来在CMP期间除去微粒材料。 实施例还包括在每个CMP步骤之后在晶片表面上的流动和抑制剂以降低静态蚀刻速率。

    Preconditioning abrasive articles for use in chemical-mechanical polishing
    5.
    发明公开
    Preconditioning abrasive articles for use in chemical-mechanical polishing 审中-公开
    磨料制品的制备化学机械抛光

    公开(公告)号：EP1107300A2

    公开(公告)日：2001-06-13

    申请号：EP00310703.4

    申请日：2000-12-01

    申请人： Applied Materials, Inc.

    发明人： Birang, Manoocher ,  Emami, Ramin ,  Li, Shjian ,  Redeker, Fred C.

    IPC分类号： H01L21/306 ,  B24B7/22 ,  B24B21/04 ,  B24B49/14 ,  B24B55/00

    CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/245

    摘要： In CMP apparatus (10) removal rates of fixed abrasive articles (11) is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water applied by a spray nozzle (12) from a container (13) fed by line (13) from a source. The water in the container is maintained at a temperature of about 90°C to about 100°C. The heating of the article (11) increases and stabilizes the Cu or Cu alloy CMP removal rate.

    摘要翻译： 在CMP装置固定磨料制品（10）的移除速率（11）被增加和晶片到晶片的均一性由热预处理增强。 实施例包括通过用从一个源通过管线（13）进料容器（13）的喷雾喷嘴（12）中的应用热水加热预处理的固定的磨料物品。 在容器中的水保持在约90℃的温度至约100℃的制品的加热（11）的增加，并稳定铜或铜合金的CMP去除速率。

    Method and apparatus for electrochemical-mechanical planarization
    9.
    发明公开
    Method and apparatus for electrochemical-mechanical planarization 审中-公开
    用于电化学机械平坦化的方法和装置

    公开(公告)号：EP1103346A3

    公开(公告)日：2001-11-21

    申请号：EP00310358.7

    申请日：2000-11-22

    申请人： Applied Materials, Inc.

    发明人： Sun, Lizhong ,  Tsai, Stan D. ,  Redeker, Fred C.

    IPC分类号： B24B37/04 ,  H01L21/306 ,  B23H3/00

    CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/042

    摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface (6) including a pattern of electrical conductors is disclosed comprising using a chemical-mechanical polishing (CMP)-type apparatus (20) having an abrasive or non-abrasive polishing pad (12,13) with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid from a conduit (8) and applying a time-varying anodic potential through terminal (W) to the workpiece surface (6) for controllably dissolving the material, e.g. metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    Wafer edge cleaning method and apparatus
    10.
    发明公开
    Wafer edge cleaning method and apparatus 审中-公开
    用于清洗晶片的边缘的方法和装置

    公开(公告)号：EP1058300A3

    公开(公告)日：2001-09-26

    申请号：EP00302704.2

    申请日：2000-03-30

    申请人： Applied Materials, Inc.

    发明人： Redeker, Fred C. ,  Brown, Brian J. ,  Sugarman, Michael

    IPC分类号： H01L21/306 ,  H01L21/00 ,  B08B11/00 ,  B08B3/08 ,  B08B3/12

    CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B3/12 ,  H01L21/67051 ,  H01L21/67086 ,  Y10S134/902

    摘要： A method and apparatus is provided for removing material from the edge of a disk. In one embodiment, the edge of the disk is contacted with etchant via an etchant containing swab or trough (which may contain one or more transducers) and is rotated such that successive portions of the disk edge are scanned through the trough or past the swab. To prevent etchant from contacting the major surface of the substrate, and/or to prevent excessive etching, the edge of the disk is contacted with a rinsing fluid (e.g., a rinsing fluid nozzle or a trough filled with rinsing fluid). In a further embodiment material such as residue or particles may be removed via a trough containing sonically energized rinsing fluid.