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    METHODS AND APPARATUS FOR ELECTRICAL, MECHANICAL AND/OR CHEMICAL REMOVAL OF CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE
    2.
    发明公开
    METHODS AND APPARATUS FOR ELECTRICAL, MECHANICAL AND/OR CHEMICAL REMOVAL OF CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE 审中-公开
    METHODS AND APPARATUS FOR电，机械和/或材料的微电子衬底的官员的化学去除

    公开(公告)号：EP1399956A2

    公开(公告)日：2004-03-24

    申请号：EP02744464.5

    申请日：2002-06-20

    申请人： Micron Technology, Inc.

    发明人： LEE, Whonchee ,  MEIKLE, Scott G. ,  MOORE, Scott E. ,  DOAN, Trung T.

    IPC分类号： H01L21/321 ,  B24B37/04

    CPC分类号： B24B37/046 ,  C25F3/30 ,  C25F5/00 ,  C25F7/00 ,  H01L21/32125

    摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad,electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential,and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate, disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid, and movingat least one of the microelectronic and the polishing pad relative to the other.

    POLISHING SOLUTION FOR CMP AND METHOD OF POLISHING
    4.
    发明公开
    POLISHING SOLUTION FOR CMP AND METHOD OF POLISHING 审中-公开
    抛光液的CMP及研磨方法

    公开(公告)号：EP1936673A4

    公开(公告)日：2011-01-05

    申请号：EP06811509

    申请日：2006-10-10

    申请人： HITACHI CHEMICAL CO LTD

    发明人： SHINODA TAKASHI ,  NOBE SHIGERU ,  SAKURADA TAKAFUMI ,  OOMORI YOSHIKAZU ,  KIMURA TADAHIRO

    IPC分类号： H01L21/321 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304

    CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

    摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50 ± 5°C is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

    Electrolytic processing apparatus and method
    5.
    发明公开
    Electrolytic processing apparatus and method 审中-公开
    Apparat und Methode zur elektrolytischen Behandlung

    公开(公告)号：EP1772536A1

    公开(公告)日：2007-04-11

    申请号：EP06021548.0

    申请日：2002-09-11

    申请人： EBARA CORPORATION

    发明人： Kobata, Itsuki ,  Shirakashi, Mitsuhiko ,  Kumekawa, Masayuki ,  Saito, Takayuki ,  Toma, Yasushi ,  Suzuki, Tsukuru ,  Yamada, Kaoru ,  Makita, Yuji ,  Yasuda, Hozumi ,  Noji, Ikutaro ,  Fujiwara, Kunio ,  Nabeya, Osamu

    IPC分类号： C25F1/00 ,  C25F7/00 ,  C25F3/00 ,  H01L21/3213

    CPC分类号： B23H5/08 ,  C23F3/00 ,  C25F1/00 ,  C25F3/00 ,  C25F7/00 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/32134

    摘要： There is provided an electrolytic processing apparatus and method which, while omitting a CMP treatment entirely or reducing a load upon a CMP treatment to the least possible extent, can process a conductive material formed in the surface of a substrate to flatten the material, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The electrolytic processing apparatus includes: a pair of electrodes disposed at a given distance; an ion exchange disposed between the pair of electrodes; and a liquid supply section for supplying a liquid between the pair of electrodes. The electrolytic processing method includes: providing an electrode section having a pair of electrodes disposed at a given distance with an ion exchanger being interposed; and bringing the electrode into contact with or close to a workpiece while supplying a fluid to the ion exchanger, thereby processing the surface of the workpiece.

    摘要翻译： 提供了一种电解处理装置和方法，其尽可能地完全省略CMP处理或减少CMP处理时的负载，但可以处理形成在基板的表面中的导电材料以使材料变平，或者可以 去除（清洁）附着在诸如基板的工件的表面上的外来物质。 所述电解处理装置包括：以一定距离设置的一对电极; 设置在所述一对电极之间的离子交换器; 以及用于在一对电极之间供应液体的液体供应部。 电解处理方法包括：提供具有一对电极的电极部分，所述电极部分设置在与离子交换器相隔一定距离的位置; 并且使电极与工件接触或接近工件，同时向离子交换器供应流体，从而处理工件的表面。

    METHOD AND APPARATUS FOR CHEMICALLY, MECHANICALLY, AND/OR ELECTROLYTICALLY REMOVING MATERIAL FROM MICROELECTRONIC SUBSTRATES
    7.
    发明公开
    METHOD AND APPARATUS FOR CHEMICALLY, MECHANICALLY, AND/OR ELECTROLYTICALLY REMOVING MATERIAL FROM MICROELECTRONIC SUBSTRATES 审中-公开
    方法和设备化学，机械和/或电微电子基板删除层

    公开(公告)号：EP1532222A1

    公开(公告)日：2005-05-25

    申请号：EP03791834.9

    申请日：2003-08-27

    申请人： Micron Technology, Inc.

    发明人： LEE, Whonchee ,  MEIKLE, Scott, G.

    IPC分类号： C09K3/14 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/3063

    CPC分类号： C09G1/02 ,  B24B37/044 ,  B24B37/046 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/32125

    摘要： Method and apparatus for chemically, mechanically and/or electrolytically removing material from microelectronic substrates. A polishing medium for removing material can include a liquid carrier, an electrolyte disposed in the liquid carrier, and abrasives disposed in the liquid carrier, with the abrasives forming up to about 1% of the polishing liquid by weight. The polishing medium can further include a chelating agent. An electrical current can be selectively applied to the microelectronic substrate via the polishing liquid, and a downforce applied to the microelectronic substrate can be selected based on the level of current applied electrolytically to the microelectronic substrate. The microelectronic substrate can undergo an electrolytic and nonelectrolytic processing on the same polishing pad, or can be moved from one polishing pad to another while being supported by a single substrate carrier.

    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE
    8.
    发明公开
    METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
    方法和组合物抛光衬底

    公开(公告)号：EP1478708A1

    公开(公告)日：2004-11-24

    申请号：EP03711289.3

    申请日：2003-02-26

    申请人： Applied Materials, Inc.

    发明人： LIU, Feng, Q. ,  TSAI, Stan, D. ,  HU, Yongqi ,  NEO, Siew, S. ,  WANG, Yan ,  DUBOUST, Alain ,  CHEN, Liang-Yuh

    IPC分类号： C09G1/02 ,  H01L21/321

    CPC分类号： C09G1/02 ,  B23H5/08 ,  H01L21/32125 ,  H01L21/32134

    摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 3 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.