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    Apparatus for treating wafers, provided with a sensor box
    1.
    发明公开
    Apparatus for treating wafers, provided with a sensor box 审中-公开
    Waferverarbeitungsvorrichtung mit einerFühlerverpackung

    公开(公告)号：EP1341213A2

    公开(公告)日：2003-09-03

    申请号：EP03075327.1

    申请日：2003-02-03

    申请人： ASM INTERNATIONAL N.V.

    发明人： de Ridder, Christianus Gerardus Maria ,  Hasper, Albert ,  Snijders, Gert-Jan ,  Zinger, Jan

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67769

    摘要： An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

    摘要翻译： 一种用于处理晶片的设备，具有至少一个处理室，所述设备设置有馈送部分，其中容纳在晶片存储盒中的晶片可以被馈送到所述设备中，所述设备通过装置设置有晶片处理装置 其中可以将晶片从晶片储存盒中取出以便在处理室中进行处理，并且该设备设置有至少一个传感器盒，其布置成使得晶片处理装置可以通过一个晶片处理装置将晶片馈送到传感器盒中 在所述至少一个传感器盒中设置用于该目的的开口，并且所述至少一个传感器盒被布置成在晶片处执行测量，其中所述至少一个传感器盒可移动地布置，并且所述设备设置有传感器盒处理 设置成将所述至少一个传感器盒从存储位置移动到测量位置的装置。

    Vertical furnace
    4.
    发明公开
    Vertical furnace 失效
    Senkrechten Ofen

    公开(公告)号：EP0735575A1

    公开(公告)日：1996-10-02

    申请号：EP96200869.4

    申请日：1996-03-29

    申请人： ASM INTERNATIONAL N.V.

    发明人： Huussen,Frank ,  Berenpas, Gerard ,  Hasper, Albert ,  De Ridder, Chris G.M.

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67115

    摘要： Vertical furnace for processing wafers positioned on a support structure. The furnace comprises an inner sleeve, heating means and an outer sleeve. To support the inner sleeve on the support structure a support sleeve is provided engaging with its top end lower part of the inner sleeve and resting with its lower end on the support structure.

    摘要翻译： 用于处理位于支撑结构上的晶圆的立式炉。 炉包括内套筒，加热装置和外套筒。 为了支撑支撑结构上的内套筒，提供支撑套筒，其与内套筒的顶端下部接合，并将其下端搁置在支撑结构上。

    Deposition of TiN films in a batch reactor
    6.
    发明公开
    Deposition of TiN films in a batch reactor 审中-公开
    Abcheidung von TiN-Schichten在einem Batch-Reaktor

    公开(公告)号：EP1641031A2

    公开(公告)日：2006-03-29

    申请号：EP05011705.0

    申请日：2005-05-31

    申请人： ASM INTERNATIONAL N.V.

    发明人： Hasper, Albert ,  Vandezande, Lieve ,  Bankras, Radko Gerard ,  Snijders, Gert-Jan ,  De Blank, Marinus J.

    IPC分类号： H01L21/285

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/28556

    摘要： Titanium nitride (TiN) films are formed in a batch reactor (10) using titanium chloride (TiCl 4 ) and ammonia (NH 3 ) as precursors. The TiCl 4 is flowed into the reactor (10) in temporally separated pulses. The NH 3 can also be flowed into the reactor (10) in temporally spaced pulses which alternate with the TiCl 4 pulses, or the NH 3 can be flowed continuously into the reactor (10) while the TiCl 4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

    摘要翻译： 使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器（10）中形成氮化钛（TiN）膜。 TiCl 4在时间上分离的脉冲中流入反应器（10）。 NH 3也可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器（10），或者NH 3可以连续流入反应器（10），同时以脉冲形式引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。