公开(公告)号：EP0613174A3

公开(公告)日：1995-03-01

申请号：EP94301125.4

申请日：1994-02-16

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Lothian, James Robert ,  Pearton, Stephen John ,  Ren, Fan

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/027 ,  H01L21/338

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/28587 ,  H01L29/42316

摘要： In accordance with the invention a fine-line semiconductor device is fabricated by the steps of applying a layer of resist (11) to the surface of a semiconductor substrate (10), opening a line in the resist with negative sloping side walls, applying to the patterned structure a layer of material (16) which conforms to both horizontal and vertical surfaces including the negative sloping sidewalls, thereby reducing the width of the opened line; and etching away the horizontal portions of the conforming layer using the overhanging portion of the conforming layer as a mask. The result is an exposed line of semiconductor (19) having a width reduced from the original width by more than twice the thickness of the conforming layer. The invention is illustrated by the fabrication of a gallium arsenide MESFET transistor with a 0.4 micron gate length. Gate lengths so small as 0.1 micron have been made using this technique.

公开(公告)号：EP0544438A2

公开(公告)日：1993-06-02

申请号：EP92310488.9

申请日：1992-11-18

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Pearton, Stephen John ,  Ren, Fan ,  Wisk, Patrick William

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/306 ,  C30B25/02

CPC分类号： H01L21/02046 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318

摘要： In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAS) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon "getters". When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600°C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.

摘要翻译： 根据本发明，通过分子束方法生长含镓层，其使用作为砷前体的二烷基氨基酸族（DAAAS）的化合物如三 - 二甲基氨基砷（DMAA）。 与常规砷源相反，DAAAs作为碳“吸气剂”。 当DAAAs用作砷源时，DAAAs从镓源吸收碳杂质。 因此，例如，DAAAs可以作为砷源与作为镓源的TMG结合使用，以在低于600℃的低温下选择性地生长高纯度或n型砷化镓层。另外DMAAs已经被发现是 优异的砷化镓清洁剂。

公开(公告)号：EP0613174A2

公开(公告)日：1994-08-31

申请号：EP94301125.4

申请日：1994-02-16

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Lothian, James Robert ,  Pearton, Stephen John ,  Ren, Fan

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/027 ,  H01L21/338

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/28587 ,  H01L29/42316

摘要： In accordance with the invention a fine-line semiconductor device is fabricated by the steps of applying a layer of resist (11) to the surface of a semiconductor substrate (10), opening a line in the resist with negative sloping side walls, applying to the patterned structure a layer of material (16) which conforms to both horizontal and vertical surfaces including the negative sloping sidewalls, thereby reducing the width of the opened line; and etching away the horizontal portions of the conforming layer using the overhanging portion of the conforming layer as a mask. The result is an exposed line of semiconductor (19) having a width reduced from the original width by more than twice the thickness of the conforming layer. The invention is illustrated by the fabrication of a gallium arsenide MESFET transistor with a 0.4 micron gate length. Gate lengths so small as 0.1 micron have been made using this technique.

摘要翻译： 根据本发明，通过以下步骤制造细线半导体器件：将抗蚀剂层（11）施加到半导体衬底（10）的表面上，在具有负斜面侧壁的抗蚀剂中打开一条线，施加到 所述图案化结构是与包括所述负倾斜侧壁的水平和垂直表面一致的材料层（16），从而减小所述开口线的宽度; 并使用适形层的悬垂部分作为掩模蚀刻掉适形层的水平部分。 结果是半导体（19）的暴露线具有从原始宽度减小约一倍厚度的两倍的宽度的宽度。 通过制造具有0.4微米栅极长度的砷化镓MESFET晶体管来说明本发明。 使用这种技术已经制得如此小至0.1微米的栅极长度。

公开(公告)号：EP0544438A3

公开(公告)日：1994-09-21

申请号：EP92310488.9

申请日：1992-11-18

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Pearton, Stephen John ,  Ren, Fan ,  Wisk, Patrick William

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/306 ,  C30B25/02

CPC分类号： H01L21/02046 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318

摘要： In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAS) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon "getters". When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600°C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.