公开(公告)号：EP0501684B1

公开(公告)日：2001-11-21

申请号：EP92301436.9

申请日：1992-02-21

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renée ,  Ren, Fan

IPC分类号： H01L21/205 ,  H01L21/331 ,  H01L29/207 ,  H01L29/737 ,  C30B25/02

CPC分类号： H01L29/207 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66318 ,  Y10S148/11

公开(公告)号：EP0376438A2

公开(公告)日：1990-07-04

申请号：EP89308622.3

申请日：1989-08-24

申请人： AT&T Corp.

发明人： Ren, Fan ,  Shah, Nitin J.

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  Y10S148/051 ,  Y10S148/056

摘要： A method for selectively etching higher aluminum concentration AlGaAs in the presence of lower aluminum concentration AlGaAs or GaAs, preferably at room temperature. The AlGaAs is first cleaned with a solution of NH₄OH and rinsed. The AlGaAs is then etched in a solution of HF. If photoresist is used on the AlGaAs, the photoresist may first be baked to increase the adhesion of the photoresist to the AlGaAs and to "toughen" the photoresist to reduce undercutting thereof. Agitation is applied to the AlGaAs or the etchant to assist in the uniform etching of the AlGaAs.

摘要翻译： 在较低铝浓度AlGaAs或GaAs的存在下，优选在室温下选择性地蚀刻较高铝浓度的AlGaAs的方法。 首先用NH 4 OH溶液清洗AlGaAs并冲洗。 然后将AlGaAs在HF溶液中蚀刻。 如果在AlGaAs上使用光致抗蚀剂，则可以首先烘烤光致抗蚀剂以增加光致抗蚀剂与AlGaAs的粘附性，并且“增韧”光致抗蚀剂以减少其底切。 对AlGaAs或蚀刻剂施加搅拌以辅助均匀蚀刻AlGaAs。

公开(公告)号：EP0517443B1

公开(公告)日：1998-09-23

申请号：EP92304899.5

申请日：1992-05-29

申请人： AT&T Corp.

发明人： Emerson, Adrian Bruce ,  Ren, Fan

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/28581 ,  H01L29/66863 ,  Y10S438/906 ,  Y10S438/909

公开(公告)号：EP0613174A3

公开(公告)日：1995-03-01

申请号：EP94301125.4

申请日：1994-02-16

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Lothian, James Robert ,  Pearton, Stephen John ,  Ren, Fan

IPC分类号： H01L21/033 ,  H01L21/28 ,  H01L21/027 ,  H01L21/338

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/28587 ,  H01L29/42316

摘要： In accordance with the invention a fine-line semiconductor device is fabricated by the steps of applying a layer of resist (11) to the surface of a semiconductor substrate (10), opening a line in the resist with negative sloping side walls, applying to the patterned structure a layer of material (16) which conforms to both horizontal and vertical surfaces including the negative sloping sidewalls, thereby reducing the width of the opened line; and etching away the horizontal portions of the conforming layer using the overhanging portion of the conforming layer as a mask. The result is an exposed line of semiconductor (19) having a width reduced from the original width by more than twice the thickness of the conforming layer. The invention is illustrated by the fabrication of a gallium arsenide MESFET transistor with a 0.4 micron gate length. Gate lengths so small as 0.1 micron have been made using this technique.

公开(公告)号：EP0507434A3

公开(公告)日：1994-09-21

申请号：EP92300893.2

申请日：1992-02-03

申请人： AT&T Corp.

发明人： Fullowan, Thomas Robert ,  Pearton, Stephen John ,  Ren, Fan

IPC分类号： H01L21/302 ,  H01L29/73 ,  H01L21/331

CPC分类号： H01L21/3081

摘要： Disclosed is a method of making semiconductor devices that comprises etching of a semiconductor layer, with a patterned metal layer acting as the etch mask. The patterned metal layer comprises a mask metal layer (22; exemplarily Ti) overlying a contact metal layer (21; exemplarily a Au-containing layer). In an exemplary embodiment the inventive method is used to manufacture InP-based heterojunction bipolar transistors.

公开(公告)号：EP0517443A3

公开(公告)日：1993-09-29

申请号：EP92304899.5

申请日：1992-05-29

申请人： AT&T Corp.

发明人： Emerson, Adrian Bruce ,  Ren, Fan

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/28581 ,  H01L29/66863 ,  Y10S438/906 ,  Y10S438/909

摘要： The Schottky barrier gate (8) contact is produced by wet-chemical removal of native oxide in a sealed inert gas ambient and blow-drying the wet-etched surface with the inert gas prior to deposition of gate electrode metal on GaAs (4) by electron beam evaporation in an inert gas ambient. Use of Pt, the gate contact metal results in a Schottky barrier height of 0.98 eV for Pt on n-type GaAs (0.78 eV). To lower the sheet resistivity of the gate contact, Pt is preferably used as a multi-layer contact in combination with metals having lower sheet resistivity, e.g. Pt Au belayer.

公开(公告)号：EP0544437B1

公开(公告)日：2003-09-17

申请号：EP92310487.1

申请日：1992-11-18

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee' ,  Pearton, Stephen John ,  Ren, Fan ,  Wisk, Patrick William

IPC分类号： H01L21/205 ,  H01L21/20 ,  C30B25/02

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

公开(公告)号：EP0544438A2

公开(公告)日：1993-06-02

申请号：EP92310488.9

申请日：1992-11-18

申请人： AT&T Corp.

发明人： Abernathy, Cammy Renee ,  Pearton, Stephen John ,  Ren, Fan ,  Wisk, Patrick William

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/306 ,  C30B25/02

CPC分类号： H01L21/02046 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318

摘要： In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAS) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon "getters". When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600°C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.

摘要翻译： 根据本发明，通过分子束方法生长含镓层，其使用作为砷前体的二烷基氨基酸族（DAAAS）的化合物如三 - 二甲基氨基砷（DMAA）。 与常规砷源相反，DAAAs作为碳“吸气剂”。 当DAAAs用作砷源时，DAAAs从镓源吸收碳杂质。 因此，例如，DAAAs可以作为砷源与作为镓源的TMG结合使用，以在低于600℃的低温下选择性地生长高纯度或n型砷化镓层。另外DMAAs已经被发现是 优异的砷化镓清洁剂。

公开(公告)号：EP0376438A3

公开(公告)日：1990-09-19

申请号：EP89308622.3

申请日：1989-08-24

申请人： AT&T Corp.

发明人： Ren, Fan ,  Shah, Nitin J.

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  Y10S148/051 ,  Y10S148/056

摘要： A method for selectively etching higher aluminum concentration AlGaAs in the presence of lower aluminum concentration AlGaAs or GaAs, preferably at room temperature. The AlGaAs is first cleaned with a solution of NH₄OH and rinsed. The AlGaAs is then etched in a solution of HF. If photoresist is used on the AlGaAs, the photoresist may first be baked to increase the adhesion of the photoresist to the AlGaAs and to "toughen" the photoresist to reduce undercutting thereof. Agitation is applied to the AlGaAs or the etchant to assist in the uniform etching of the AlGaAs.

公开(公告)号：EP0540230B1

公开(公告)日：1998-12-30

申请号：EP92309607.7

申请日：1992-10-21

申请人： AT&T Corp.

发明人： Fullowan, Thomas Robert ,  Pearton, Stephen John ,  Ren, Fan

IPC分类号： H01L21/321

CPC分类号： C23F4/00 ,  H01L21/28 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32139