SUBSTRATE TRANSFER ROBOT END EFFECTOR
    3.
    发明公开
    SUBSTRATE TRANSFER ROBOT END EFFECTOR 审中-公开
    基片传输机器人末端效应器

    公开(公告)号:EP3164883A1

    公开(公告)日:2017-05-10

    申请号:EP15815072.2

    申请日:2015-06-05

    IPC分类号: H01L21/677

    CPC分类号: H01L21/68707 H01L21/67766

    摘要: Embodiments of apparatus for supporting a substrate are disclosed herein. In some embodiments, an apparatus for supporting a substrate includes a support member; and a plurality of substrate contact elements protruding from the support member, wherein each of the plurality of substrate contact elements includes: a first contact surface to support a substrate when placed thereon; and a second contact surface extending from the first contact surface, wherein the second contact surface is adjacent a periphery of the substrate to prevent radial movement of the substrate, wherein the first contact surface is at a first angle with respect to the support member and the second contact surface is at a second angle with respect to the support member, and wherein the first angle is between about 3 degrees and 5 degrees.

    摘要翻译: 这里公开了用于支撑衬底的设备的实施例。 在一些实施例中,用于支撑衬底的装置包括支撑构件; 以及从所述支撑构件突出的多个基板接触元件,其中所述多个基板接触元件中的每一个均包括:第一接触表面,用于当放置在其上时支撑基板; 以及从所述第一接触表面延伸的第二接触表面,其中所述第二接触表面邻近所述衬底的周边以防止所述衬底的径向移动,其中所述第一接触表面相对于所述支撑构件成第一角度,并且所述 第二接触表面相对于所述支撑构件处于第二角度,并且其中所述第一角度在大约3度和5度之间。

    SPUTTERING TARGET
    4.
    发明公开
    SPUTTERING TARGET 审中-公开
    溅射

    公开(公告)号:EP1036211A1

    公开(公告)日:2000-09-20

    申请号:EP98957387.8

    申请日:1998-10-26

    IPC分类号: C23C14/34

    摘要: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats of blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production so such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.