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公开(公告)号:EP3019553A4
公开(公告)日:2017-03-15
申请号:EP14823671
申请日:2014-06-30
申请人: BASF SE
发明人: ZHOU MI , BRUNETTI FULVIO G , MARTIN EMMANUEL , BECKER STEFAN , DOI IORI , SANTOSO RAISSA NATHANIA , LAM MEI SHAN
IPC分类号: C07C247/16 , C07D333/20 , C07D333/22 , C08F28/06 , C08F32/02 , C08J3/00 , C08K5/00 , H01L51/05
CPC分类号: H01L21/02118 , C07C247/16 , C07C2603/18 , C07D333/20 , C07D333/22 , C08J3/24 , C08J3/28 , C08J2325/06 , C08K5/28 , C08K5/45 , C09D125/06 , H01L51/0018 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要: The present invention provides compounds of formula a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.
摘要翻译: 本发明提供式Ⅰ化合物,其制备方法,包含这些化合物的溶液,制备使用该溶液的装置的方法,通过该方法可获得的装置和双叠氮化物型化合物作为交联剂的用途, 接头。
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公开(公告)号:EP3198614A4
公开(公告)日:2018-04-04
申请号:EP15845021
申请日:2015-08-13
申请人: BASF SE
发明人: MARTIN EMMANUEL , BRUNETTI FULVIO G , ZHOU MI , BECKER STEFAN , KAELBLEIN DANIEL , WU CHAO , PRAPTANA RAIMOND , KNOLL KONRAD , KOPPING JORDAN THOMAS
IPC分类号: C08F112/14 , C08F212/14
CPC分类号: H01L51/052 , C08F12/20 , C08F12/22 , C08F12/32 , C08F112/14 , C08F212/14 , C09D125/18 , H01L51/004 , H01L51/0043 , C08F212/32
摘要: Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0,1,2,3,4,5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar 1 and Ar 2 are independently from each other C 6-14-arylene or C 6-14-aryl,which may be substituted with 1 to 4 substituents independently selected from the group consisting of C 1-30-alkyl, C 2-30-alkenyl, C 2-30-alkynyl, C 5-8-cycloalkyl, C 6-14-aryl and 5 to 14 membered heteroaryl, and X 1,X 2 and X 3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.
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