Amine precursors for depositing graphene
    5.
    发明公开
    Amine precursors for depositing graphene 审中-公开
    Aminvorläuferzum Ablagern von Graphen

    公开(公告)号:EP2857550A1

    公开(公告)日:2015-04-08

    申请号:EP13187091.7

    申请日:2013-10-02

    IPC分类号: C23C16/26 C01B31/04

    摘要: The present invention relates to the use of an amine precursor of formula I

             (X 1 -R 1 ) n -NH (3-n)      (I)

    or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65 % by weight on a substrate S1 by chemical vapor deposition (CVD),
    wherein
    R 1
    is selected from
    (a)
    C 1 to C 10 alkanediyl, which may all optionally be interrupted by at least one of O, N H and NR 2 ,
    (b)
    alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
    (c)
    alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 ,
    (d)
    C 6 to C 20 aromatic divalent moiety, and
    (e)
    CO and CH 2 CO,
    X 1
    is selected from H, OH, OR 2 , NH 2 , NHR 2 , or NR 2 2 , wherein two groups X 1 may together form a bivalent group X 2 being selected from a chemical bond, O, NH, or NR 2 ,
    R 2
    is selected from C 1 to C 10 alkyl and a C 6 to C 20 aromatic moiety which may optionally be substituted by one or more substituents X 1 ,
    n
    is 1, 2, or 3.

    摘要翻译: 本发明涉及式I的胺前体的用途ƒ€ƒ€ƒ€ƒ€ƒ€ƒ(X 1 -R 1)n -NH(3-n)€ƒ€ ƒ€ƒ(I)或其铵盐,用于通过化学气相沉积(CVD)在基板S1上沉积氮含量为0至65重量%的石墨烯膜,其中R 1选自(a) C 1至C 10烷二基,其可全部任选地被O,NH和NR 2中的至少一个中断,(b)烯二基,其均可任选被O,NH和NR 2中的至少一个中断,(c )炔二基,其可全部任选被O,NH和NR 2,(d)C 6至C 20芳族二价部分中的至少一个中断,(e)CO和CH 2 CO,X 1选自H, OH,OR 2,NH 2,NHR 2或NR 2 2,其中两个基团X 1可以一起形成选自化学键,O,NH或NR 2的二价基团X 2,R 2选自C 1至C 10烷基和C 6至C 20芳族部分,其可任选地被取代 d由一个或多个取代基X 1,n是1,2或3。