摘要:
The present invention relates to a polymer electrolyte membrane (PEM) water electrolyser, wherein a nitrogen-doped carbon is present in the anode-containing half-cell.
摘要:
The present invention relates to a process for preparing graphene by electrochemical exfoliation, which comprises: - providing a first electrode E1 and a second electrode E2, wherein at least the first electrode E1 comprises a carbon starting material having a layered structure; - bringing at least the first electrode E1 in contact with a liquid electrolyte, wherein the liquid electrolyte comprises - an ammonium cation, and - an inorganic sulphur-containing anion,
- applying an electric potential between the first electrode E1 and the second electrode E2 so as to exfoliate graphene from the carbon starting material.
摘要:
An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent;
and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
摘要:
A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.