Abstract:
A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.
Abstract:
A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.
Abstract:
A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.
Abstract:
A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.