公开(公告)号：EP1766669A1

公开(公告)日：2007-03-28

申请号：EP05749663.0

申请日：2005-05-13

申请人： BATTELLE MEMORIAL INSTITUTE ,  LAM RESEARCH CORPORATION

发明人： YONKER, Clement, R. ,  FULTON, John, L. ,  GASPAR, Daniel, J. ,  HYMES, Diane, J.

IPC分类号： H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  C11D11/00 ,  B24B53/007

CPC分类号： H01L21/31116 ,  B08B7/0021 ,  C23F1/34 ,  H01L21/02052 ,  H01L21/32115 ,  H01L21/32134

摘要： The present invention generally relates to methods for processing materials. More particularly, the present invention relates to reactive fluids and uses thereof for removing deposition materials, including, but not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing.

公开(公告)号：EP1875492A2

公开(公告)日：2008-01-09

申请号：EP06749105.0

申请日：2006-03-30

申请人： BATTELLE MEMORIAL INSTITUTE

发明人： YONKER, Clement, R. ,  MATSON, Dean, W. ,  GASPAR, Daniel, J. ,  DEVERMAN, George, S.

IPC分类号： H01L21/00

CPC分类号： C23C18/02 ,  C23C18/08 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76879

摘要： Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.

公开(公告)号：EP1716587A2

公开(公告)日：2006-11-02

申请号：EP05723478.3

申请日：2005-02-15

申请人： BATTELLE MEMORIAL INSTITUTE

发明人： FULTON, John, L. ,  GASPAR, Daniel, J. ,  YONKER, Clement, R. ,  YOUNG, James, S. ,  SCOTT, Alan, Lea ,  ENGELHARD, Mark, H.

IPC分类号： H01L21/00

CPC分类号： H01L21/02063 ,  B08B7/0021 ,  C11D1/123 ,  C11D1/146 ,  C11D1/345 ,  C11D11/0047 ,  H01L21/02101 ,  H01L21/76814

摘要： The present invention generally relates to a system for cleaning substrates. More particularly, the present invention relates to process(es) for effecting chemical removal of residues from semiconductor substrates, including silicon wafers, using a system of reactive reverse micelle(s) or microemulsions in a densified carbon dioxide matrix. Various reactive chemical agents in the reactive micelle system may be used to effect cleaning and removal of etch and metal residues to levels sufficient for commercial wafer production and processing.