MEDICAL IMPLANTS AND METHODS OF MAKING MEDICAL IMPLANTS
    2.
    发明公开
    MEDICAL IMPLANTS AND METHODS OF MAKING MEDICAL IMPLANTS 审中-公开
    的医学植入物及其制造方法的医学植入物

    公开(公告)号:EP2384206A2

    公开(公告)日:2011-11-09

    申请号:EP09805981.9

    申请日:2009-12-28

    IPC分类号: A61L31/08 A61L31/16 A61L31/10

    摘要: A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio- absorbable polymer and/ or pharmaceutical agent is deposited over the bioactive agent.

    METHOD FOR PRODUCING FILMS USING SUPERCRITICAL FLUID
    3.
    发明公开
    METHOD FOR PRODUCING FILMS USING SUPERCRITICAL FLUID 有权
    工艺生产具有超临界流体FILMS

    公开(公告)号:EP1507601A2

    公开(公告)日:2005-02-23

    申请号:EP03799811.9

    申请日:2003-05-27

    IPC分类号: B05D1/02 B05D1/06

    CPC分类号: B05D1/025 B05D5/083

    摘要: A method for forming a continuous film on a substrate surface that involves depositing particles onto a substrate surface and contacting the particle-deposited substrate surface with a supercritical fluid under conditions sufficient for forming a continuous film from the deposited particles. The particles may have a mean particle size of less 1 micron. The method may be performed by providing a pressure vessel that can contain a compressible fluid. A particle-deposited substrate is provided in the pressure vessel and the compressible fluid is maintained at a supercritical or sub-critical state sufficient for forming a film from the deposited particles. The Tg of particles may be reduced by subjecting the particles to the methods detailed in the present disclosure.

    CAPTURE AND RELEASE OF ACID-GASSES WITH ACID-GAS BINDING ORGANIC COMPOUNDS
    4.
    发明公开
    CAPTURE AND RELEASE OF ACID-GASSES WITH ACID-GAS BINDING ORGANIC COMPOUNDS 审中-公开
    捕获和酸性气体与酸性气体释放约束力的有机化合物

    公开(公告)号:EP2334406A1

    公开(公告)日:2011-06-22

    申请号:EP09744507.6

    申请日:2009-09-21

    IPC分类号: B01D53/14

    摘要: Reversible acid-gas binding organic liquid materials, systems and methods that permit capture of one or more of the several acid gases. These acid-gas binding organic compounds can be regenerated to release the captured acid gasses and enable these organic acid-gas binding materials to be reused. This enables transport of the liquid capture compounds and the release of the acid gases from the organic liquid with significant energy savings compared to current aqueous systems. The acid gas capture compound is preferably a liquid material that can be easily transported to allow movement of the captured material from the scrubbing location to a second stage where the acid gas can be removed for storage or processing. Once the acid gas is removed from the organic liquid, the organic liquid can be returned to the system and the process repeated. In some embodiments these are single molecules of zwitteronic liquids.

    METHOD AND APPARATUS FOR SELECTIVE DEPOSITION OF MATERIALS TO SURFACES AND SUBSTRATES
    7.
    发明公开
    METHOD AND APPARATUS FOR SELECTIVE DEPOSITION OF MATERIALS TO SURFACES AND SUBSTRATES 审中-公开
    方法和设备供物料表面和基材的可选择存储

    公开(公告)号:EP1875492A2

    公开(公告)日:2008-01-09

    申请号:EP06749105.0

    申请日:2006-03-30

    IPC分类号: H01L21/00

    摘要: Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.

    METHOD FOR PRODUCING FILMS USING SUPERCRITICAL FLUID
    8.
    发明授权
    METHOD FOR PRODUCING FILMS USING SUPERCRITICAL FLUID 有权
    工艺生产具有超临界流体FILMS

    公开(公告)号:EP1507601B1

    公开(公告)日:2006-12-27

    申请号:EP03799811.9

    申请日:2003-05-27

    IPC分类号: B05D1/02 B05D1/06

    CPC分类号: B05D1/025 B05D5/083

    摘要: A method for forming a continuous film on a substrate surface that involves depositing particles onto a substrate surface and contacting the particle-deposited substrate surface with a supercritical fluid under conditions sufficient for forming a continuous film from the deposited particles. The particles may have a mean particle size of less 1 micron. The method may be performed by providing a pressure vessel that can contain a compressible fluid. A particle-deposited substrate is provided in the pressure vessel and the compressible fluid is maintained at a supercritical or sub-critical state sufficient for forming a film from the deposited particles. The Tg of particles may be reduced by subjecting the particles to the methods detailed in the present disclosure.