-
公开(公告)号：EP0232619A2
公开(公告)日：1987-08-19
申请号：EP86310103.6
申请日：1986-12-23
IPC分类号： H01L21/205 , H01L29/72 , C23C16/24
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
-
公开(公告)号：EP0232619B1
公开(公告)日：1992-03-25
申请号：EP86310103.6
申请日：1986-12-23
IPC分类号： H01L21/205 , H01L29/72 , C23C16/24
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
-
公开(公告)号：EP0232619A3
公开(公告)日：1988-04-06
申请号：EP86310103
申请日：1986-12-23
IPC分类号： H01L21/205 , H01L29/72
CPC分类号： H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02433 , H01L21/0245 , H01L21/02532 , H01L21/0262 , Y10S148/057 , Y10S148/169 , Y10S438/909
摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
-
-
搜索结果
3 条记录 (耗时 0.009 秒)
