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公开(公告)号：EP0345097B1
公开(公告)日：2001-12-12
申请号：EP89305669.7
申请日：1989-06-05
CPC分类号： G03F7/70558 , G03F7/2008 , G03F7/70875
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公开(公告)号：EP0453133B1
公开(公告)日：1997-07-09
申请号：EP91302988.0
申请日：1991-04-04
发明人： Fujioka, Hidehiko , Miyachi, Takeshi , Chiba, Yuji , Mizusawa, Nobutoshi , Kariya, Takao , Uzawa, Shunichi , Fukuda, Yasuaki
IPC分类号： G03F1/14
CPC分类号： G03F1/22
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公开(公告)号：EP0358467B1
公开(公告)日：1996-02-07
申请号：EP89308998.7
申请日：1989-09-06
发明人： Kawakami, Eigo , Ozawa, Kunitaka , Uda, Koji , Shimoda, Isamu , Uzawa, Shunichi
CPC分类号： G03F7/7075 , G03F7/709
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公开(公告)号：EP0469895B1
公开(公告)日：1995-12-06
申请号：EP91307038.9
申请日：1991-07-31
发明人： Watanabe Yutaka , Uzawa, Shunichi , Fukuda, Yasuaki , Mizusawa, Nobutoshi , Ebinuma, Ryuichi , Amemiya, Mitsuaki
CPC分类号： G21K5/04 , H01J2235/18
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5.发明公开X-ray transmitting window and method of mounting the same 失效Fenster和Verfahren zu seiner Einrichtung的Röntgenstrahlenübertragendes。
公开(公告)号：EP0469895A2
公开(公告)日：1992-02-05
申请号：EP91307038.9
申请日：1991-07-31
发明人： Watanabe Yutaka , Uzawa, Shunichi , Fukuda, Yasuaki , Mizusawa, Nobutoshi , Ebinuma, Ryuichi , Amemiya, Mitsuaki
CPC分类号： G21K5/04 , H01J2235/18
摘要： An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, is disclosed. The window includes an X-ray transmitting film; and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film, the gasket material having a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges gas-tightly.
摘要翻译： 公开了一种用于X射线光刻的X射线透射窗，用于允许X射线从真空环境到不同的氛围的透射。 窗口包括X射线透射膜; 以及密封地设置在所述X射线透射膜的周边部的至少一个相对面上的衬垫材料，所述衬垫材料的布氏硬度小于所述X射线透过膜的布氏硬度。 形成的X射线透射窗能够被气密地夹在一对凸缘之间并固定。
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公开(公告)号：EP0424181A2
公开(公告)日：1991-04-24
申请号：EP90311531.9
申请日：1990-10-19
IPC分类号： G03F7/20
CPC分类号： G03F7/70866 , G03F7/70691 , G03F7/70808 , G03F7/70858
摘要： An X-ray exposure apparatus, for transferring a pattern of the mask (13) to a wafer (15), includes an X-ray source accommodating chamber (50); a mask chuck (14) for supporting the mask; a wafer chuck (16) for supporting the wafer; a stage (18) for moving the wafer chuck; a stage accommodating chamber (19) for accommodating therein the mask chuck, the wafer chuck and the stage; a barrel (5) for coupling the X-ray source accommodating chamber with the stage accommodating chamber, to define an X-ray projection passageway (30); a blocking window (6) provided in the X-ray projection passageway, for isolating the ambience in the X-ray accommodating chamber and the ambience in the stage accommodating chamber from each other; and a gas supply port (3) contributable to fill the stage accommodating chamber with a gas ambience of low X-ray absorption. The gas supply port opens to the X-ray projection passageway at a position between the blocking window and the mask supported by the mask chuck.
摘要翻译： 一种用于将掩模（13）的图案转印到晶片（15）上的X射线曝光设备，包括：X射线源容纳室（50）; 一个掩模卡盘（14），用于支撑该掩模; 晶片卡盘（16），用于支撑晶片; 用于移动晶片卡盘的平台（18） 一个用于在其中容纳掩模卡盘，晶片卡盘和工作台的工作台容纳室（19） 用于将所述X射线源容纳室与所述载物台容纳室联接以限定X射线投影通道（30）的桶（5）; 设置在X射线投影通道中用于将X射线放置室中的气氛与台放置室中的气氛隔开的阻挡窗口; 和一个供气口（3），可以有助于充满低吸收X射线的气体氛围的载物台容纳室。 气体供应端口在阻挡窗口和由掩模卡盘支撑的掩模之间的位置处通向X射线投影通道。
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公开(公告)号：EP0363098A3
公开(公告)日：1990-11-14
申请号：EP89309976.2
申请日：1989-09-29
发明人： Ebinuma, Ryuichi , Kariya, Takao , Mizusawa, Nobutoshi , Uda, Koji , Sakamoto, Eiji , Uzawa, Shunichi
IPC分类号： G05D23/19
CPC分类号： H05K7/20281 , G03F7/707 , G03F7/70875 , G05D23/1919
摘要： A temperature controlling device suitably usable in a semiconductor microcircuit manufacturing exposure apparatus for exposing a semiconductor wafer to a mask to print a pattern of the mask on the wafer, is disclosed. The device includes a constant-temperature liquid medium supplying system for controlling temperature of a liquid at high precision, a distributing system for distributing the supplied liquid medium into plural flow passages, to supply the liquid medium to plural subjects of control such as, for example, a mask stage, a wafer stage and the like. The device further includes a plurality of temperature controls each being provided in corresponding one of the flow passages, for correction of any variance in temperature of the distributed liquid medium, resulting from pressure loss energies in the respective flow passages. Thus, temperatures of plural subjects of control can be controlled efficiently and with a simple structure.
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公开(公告)号：EP0357424A3
公开(公告)日：1990-10-17
申请号：EP89308822.9
申请日：1989-08-31
IPC分类号： H01L21/00
CPC分类号： G03F7/707 , G03F7/70866 , G03F7/70875 , H01L21/6833 , H01L21/6838
摘要： A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).
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公开(公告)号：EP0363164A2
公开(公告)日：1990-04-11
申请号：EP89310128.7
申请日：1989-10-04
IPC分类号： G03F7/20
摘要： An X-ray exposure system, for exposing a semiconductor wafer to a mask with X-rays contained in synchrotron radiation, is disclosed. In this system, the mask (1) and the wafer (46) are held on a main frame (4) so that their surfaces extend substantially in parallel to a vertical axis. The main frame suspends from a supporting frame (10) through a plurality of air mounts (7) each being displaceable vertically. The supporting frame is placed on the same reference surface as of a SOR ring (17) that produces synchrotron radiation (20). By using these air mounts, any tilt of the mask and the wafer relative to the irradiation region of the synchrotron radiation as well as the position of the mask and the wafer in the vertical direction, with respect to the irradiation region, can be controlled and maintained constant. Thus, accurate pattern printing is ensured.
摘要翻译： 公开了一种用于将半导体晶片暴露于具有同步加速器辐射中所含的X射线的掩模的X射线曝光系统。 在该系统中，掩模（1）和晶片（46）保持在主框架（4）上，使得它们的表面基本上平行于垂直轴线延伸。 主框架通过支撑框架（10）悬挂通过多个可垂直移动的空气支架（7）。 支撑框架放置在与产生同步加速器辐射（20）的SOR环（17）相同的参考表面上。 通过使用这些空气支架，可以控制掩模和晶片相对于照射区域相对于同步加速器辐射的照射区域的任何倾斜以及掩模和晶片在垂直方向上的位置，并且 保持恒定。 因此，确保了精确的图案印刷。
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公开(公告)号：EP0361934A2
公开(公告)日：1990-04-04
申请号：EP89309915.0
申请日：1989-09-28
IPC分类号： G03F7/20
CPC分类号： G03F9/7023 , G03F7/201
摘要： An exposure method wherein a mask (8) and a semiconductor wafer (1) are disposed opposed to each other in a close proximity relation in respect to Z-axis direction and wherein a pattern of the mask is printed on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy, is disclosed. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment in respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are relatively moved closer to each other in the Z-axis direction and the alignment and exposure is performed. This ensures that the alignment and exposure is effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.
摘要翻译： 一种曝光方法，其中掩模（8）和半导体晶片（1）相对于Z轴方向以彼此靠得很近的关系设置，并且其中掩模的图案被印刷在每个不同的拍摄区域上 公开了具有预定曝光能量的分步重复方式的半导体晶片。 在该方法中，掩模和晶片之间的并联间距大于它们之间的间隔，如假设在掩模与晶片对准时相对于XY平面或掩模与晶片之间的间隔 如在将晶片暴露于掩模时所假定的那样。 在掩模和晶片平行之后，掩模和晶片在Z轴方向上相对地移动得更接近并且执行对准和曝光。 这确保了对准和曝光以最佳的间隔进行，而另一方面避免了并联时掩模和晶片的接触。
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