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公开(公告)号：EP1444390A2
公开(公告)日：2004-08-11
申请号：EP02797071.4
申请日：2002-11-07
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译： 一种用于在沉积室中制造金刚石的设备，所述设备包括用于保持金刚石并且用于与金刚石的与金刚石的生长表面的边缘相邻的金刚石的侧表面进行热接触的加热/下沉保持器，非接触式温度测量装置， 测量穿过金刚石生长表面的金刚石的温度，以及主处理控制器，用于接收来自非接触式温度测量装置的温度测量结果并控制生长表面的温度，使得生长表面上的所有温度梯度小于20℃ 。制造钻石的方法包括将金刚石定位在保持器中，使得与金刚石的与金刚石的生长表面的边缘相邻的侧表面形成热接触，测量金刚石的生长表面的温度以产生温度 测量，基于温度测量来控制生长表面的温度 在生长表面上通过微波等离子体化学气相沉积生长单晶金刚石和生长单晶金刚石，其中金刚石的生长速率大于1微米每小时。
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公开(公告)号：EP1444390B1
公开(公告)日：2009-12-30
申请号：EP02797071.4
申请日：2002-11-07
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
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公开(公告)号：EP2215291A1
公开(公告)日：2010-08-11
申请号：EP08835217.4
申请日：2008-10-02
IPC分类号： C30B25/02
CPC分类号： C30B29/04 , B01J2203/0695 , C30B33/02
摘要： The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400 °C to about 2200 °C at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.
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4.发明公开ULTRATOUCH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF 审中-公开ULTRATOUCH CVD单晶金刚石及三维生长
公开(公告)号：EP1807346A2
公开(公告)日：2007-07-18
申请号：EP05858406.1
申请日：2005-09-09
CPC分类号： C30B25/105 , C23C16/274 , C23C16/277 , C23C16/279 , C30B29/04
摘要： The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
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公开(公告)号：EP2126162A1
公开(公告)日：2009-12-02
申请号：EP08724852.2
申请日：2008-01-28
CPC分类号： C30B29/04 , C30B25/105 , C30B25/12 , H01S3/0405 , H01S3/0612 , H01S5/02484
摘要： A single-crystal CVD diamond produced with a method wherein the temperature of the diamond growth surface is in the range of 900 - 1400°C and wherein the diamond is mounted in a heat sink. The diamond is grown by a microwave plasma CVD, in a deposition chamber under 150 torr, wherein the CH4 is over 8% per unit of H2. Said diamond can be used as a heat sink for a laser. Another use, is as a frequency converter, as a χ(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.
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6.发明公开NEW DIAMOND USES/APPLICATIONS BASED ON SINGLE-CRYSTAL CVD DIAMOND PRODUCED AT RAPID GROWTH RATE 审中-公开新的用途/金刚石基于与更快的生长速率生产的单晶CVD金刚石申请
公开(公告)号：EP1948853A2
公开(公告)日：2008-07-30
申请号：EP06837725.8
申请日：2006-11-15
IPC分类号： C30B29/04
CPC分类号： C30B25/105 , C30B25/18 , C30B29/04 , Y10T428/24802
摘要： The present invention is directed to new uses and applications for colorless, single- crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.
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公开(公告)号：EP1907320A2
公开(公告)日：2008-04-09
申请号：EP06770854.5
申请日：2006-05-23
IPC分类号： C01B31/06
CPC分类号： C30B29/04 , C01B32/25 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105
摘要： The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20 0C, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8 % to about 20 % CH4 per unit of H2 and from about 5 to about 25 % O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 μm/hour.
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