DIVISEUR DE PUISSANCE POUR DISPOSITIF A PLASMA
    1.
    发明公开
    DIVISEUR DE PUISSANCE POUR DISPOSITIF A PLASMA 有权
    配电IN A等离子装置

    公开(公告)号:EP1216493A1

    公开(公告)日:2002-06-26

    申请号:EP00962606.0

    申请日:2000-09-12

    IPC分类号: H01P5/16

    摘要: The invention concerns a system comprising: a microwave generator (10), a rectangular guide (110) coupled with the generator (10), adapted to operate in fundamental (H10) or transverse electrical (TE10) mode, and associated with means providing a standing wave pattern, a plurality of power connectors (116) arranged in the guide (110) at zones of maximum amplitude for one of the components of the electromagnetic field for splitting the generator (10) power, the power connectors (116) being adjusted such that the sum of their reduced admittance levels brought to the splitter input formed by the rectangular guide (110) is in single unit and a plurality of sources (400), respectively coupled to a connector (116) of the guide (110), via an insulating means (200) ensuring a power transmission of the connector (116) to the source (400) without reflecting towards the connector (116) and a device (300) adapting impedance of each source (400), located downstream of the insulating means (200), between the latter and the associated source (400).

    SOURCE D ELECTRONS
    2.
    发明公开
    SOURCE D ELECTRONS 有权
    电子源

    公开(公告)号:EP1451846A2

    公开(公告)日:2004-09-01

    申请号:EP02796900.5

    申请日:2002-12-06

    IPC分类号: H01J37/077

    摘要: The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D = 1/β ∑2πme/mi exp (-1/2), wherein:β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.

    DISPOSITIF DE PRODUCTION D UNE NAPPE DE PLASMA
    3.
    发明公开
    DISPOSITIF DE PRODUCTION D UNE NAPPE DE PLASMA 审中-公开
    用于生产大的表面等离子体

    公开(公告)号:EP1518256A1

    公开(公告)日:2005-03-30

    申请号:EP03756046.3

    申请日:2003-06-03

    IPC分类号: H01J37/32 H05H1/46

    摘要: The invention relates to a device for the production of a plasma (16) within a housing comprising means for the generation of energy in the microwave spectrum, for the excitation of the plasma, said means comprise at least one basic plasma excitation device with a coaxial applicator (4) of microwave energy, one of the ends of which is connected to a production source (7) of microwave energy, the other end (8) of which is directed to the gas to be excited within the housing. The device is characterised in that each basic plasma excitation device is arranged in the wall (3) of the housing, each applicator (4) having a central core (5) which is essentially flush with the wall of the housing. The central core and the thickness of the wall (3) of the housing are separated by a space (6) coaxial to the central core, said space being totally filled, at least at the end of each applicator, by a dielectric material (14), such that said material is essentially flush with the level of the wall of the housing.