Circuit for generating a reference voltage and detecting an undervoltage of a supply voltage and corresponding method
    6.
    发明公开
    Circuit for generating a reference voltage and detecting an undervoltage of a supply voltage and corresponding method 失效
    用于产生参考电压,并检测电源电压的下降和相关联的方法的电路装置

    公开(公告)号:EP0733959A1

    公开(公告)日:1996-09-25

    申请号:EP95830111.1

    申请日:1995-03-24

    IPC分类号: G05F3/26 G05F3/28

    CPC分类号: G11C5/147 G05F1/465 G05F3/267

    摘要: A circuit for generating a reference voltage and detecting a drop in a supply voltage, comprising at least one threshold comparator (12) having an input terminal (IN) and an output terminal, and a voltage divider (14) connected between a first supply voltage reference (Vs) and a second voltage reference (GND) and connected to the input terminal (IN) of the comparator (12), further provides for the output terminal (OUT) of said comparator (12) to be connected to the input terminal (IN) through at least one feedback network comprising at least one current generator (CG1).
    The feedback network further comprises a buffer block (13) having an input terminal connected to said comparator (12) and a first output terminal (DO) connected to a switch (SW) which is connected between a circuit node (X2) of said voltage divider (14) and the second voltage reference (GND).

    摘要翻译: 连接在第一电源电压之间,用于产生参考电压,并检测在供电电压下降的电路,包括:具有输入端(IN)上,并输出终端的至少一个阈值比较器(12),和一个电压分压器(14) 参考(VS)和一个第二电压基准(GND)和连接到所述比较器(12)的输入端(IN),还提供了用于所述比较器(12)的输出端(OUT)被连接到输入端 (IN)通过至少一个反馈网络,其包括至少一个电流发生器(CG1)。 反馈网络还包括具有连接到连接到被连接在所述电压的电路节点(X2)之间的开关(SW)所有的所述比较器(12)和第一输出端(DO)输入端一个缓冲器块(13) 除法器(14)和所述第二电压基准(GND)。

    Driving circuit for a field effect transistor in final semibridge stage
    7.
    发明公开
    Driving circuit for a field effect transistor in final semibridge stage 失效
    Treiberschaltungfüreinen Feldeffekttistoristor在einerHalbbrückenausgangsstufe。

    公开(公告)号:EP0608667A1

    公开(公告)日:1994-08-03

    申请号:EP93830034.0

    申请日:1993-01-29

    IPC分类号: H03K17/687

    摘要: A drive circuit for a field-effect transistor (MFET1) which has a drain terminal connected to the positive pole (+Vcc) of the power supply and a source terminal connected to a load (OUT).
    The circuit has circuit means for turning off the field-effect transistor (MFET1) which comprises a first transistor (M1) connected between the gate terminal of the field-effect transistor (MFET1) and the negative pole (GND) of the power supply.
    Said first transistor (MFET1) is driven by an operational amplifier (M3,M4,MR1,MR2,MR3) which has inverting and non-inverting terminals connected to the gate and source terminals of the field-effect transistor (MFET1) respectively.

    摘要翻译: 用于场效应晶体管(MFET1)的驱动电路,其具有连接到电源的正极(+ Vcc)的漏极端子和连接到负载(OUT)的源极端子。 电路具有用于截止场效应晶体管(MFET1)的电路装置,该场效应晶体管包括连接在场效应晶体管(MFET1)的栅极端子和电源的负极(GND)之间的第一晶体管(M1)。 所述第一晶体管(MFET1)由运算放大器(M3,M4,MR1,MR2,MR3)驱动,其运算放大器分别具有连接到场效应晶体管(MFET1)的栅极和源极端子的反相和非反相端子。

    MOS voltage elevator of the charge pump type
    9.
    发明公开
    MOS voltage elevator of the charge pump type 失效
    MOSSpannungserhöhervom Ladungspumpentype

    公开(公告)号:EP0696839A1

    公开(公告)日:1996-02-14

    申请号:EP94830402.7

    申请日:1994-08-12

    IPC分类号: H02M3/07

    CPC分类号: H02M3/073 H02M3/07

    摘要: The present invention relates to a charge pump MOS voltage booster and to two applications where said type of booster can find advantageous use.
    The voltage booster comprises instead of the classical diodes, which exhibit undesired voltage drop, four MOS transistors and, instead of the classical single-output oscillator with associated charge transfer condenser, an oscillator with two outputs and two corresponding charge transfer condensers.
    In this manner there are practically no undesired voltage drops and the ripple is reduced without complicating the circuitry structure.

    摘要翻译: 本发明涉及一种电荷泵MOS电压升压器和两种应用,其中所述类型的升压器可以发现有利的用途。 升压器包括代替典型的二极管,其表现出不希望的电压降,四个MOS晶体管,而不是经典的具有相关电荷转移电容器的单输出振荡器,具有两个输出的振荡器和两个相应的电荷转移电容器。 以这种方式,实际上没有不期望的电压降并且纹波减小而不使电路结构复杂化。