公开(公告)号：EP1641709B1

公开(公告)日：2007-04-11

申请号：EP04767542.6

申请日：2004-07-01

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： GRANGE, Hubert ,  DIEM, Bernard ,  VIOLLET, Bosson, Yylvie ,  BOREL, Michel

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/001 ,  B81C2201/115

摘要： The invention concerns a method wherein a useful layer (1) is initially connected by a sacrificial layer (2) to a layer (3) constituting a substrate. Prior to etching of the sacrificial layer (2), at least part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched, so as to increase the roughness of its doped part. Prior to doping, a mask (9) is deposited on part of the useful layer (1) so as to delimit a doped region and a non-doped region of the surface (4, 5), one of the regions constituting a stop after the surface etching phase.

公开(公告)号：EP1741131A2

公开(公告)日：2007-01-10

申请号：EP05746639.3

申请日：2005-04-20

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  Freescale Semiconductor, Inc.

发明人： DIEM, Bernard ,  BLANCHET, Eugène ,  GOGOI, Bishnu

IPC分类号： H01L21/68

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to level realignment following an epitaxy step on a face (31) of a substrate (30), consisting in producing at least one initial reference mark (32) on the face of the substrate, whereby said mark is designed to be transferred during the epitaxy to the surface of the epitaxy layer (36). The initial reference mark (32) is produced such that, during the epitaxy, the edges thereof create growth defects which propagate to the surface of the epitaxy layer (36) in order to provide a transferred reference mark (37) on the surface of the epitaxy layer, which reproduces the shape of the initial reference mark (32) and which is aligned therewith.

摘要翻译： 本发明涉及在衬底（30）的面（31）上的外延步骤之后的层级重新对准，其包括在衬底的面上产生至少一个初始参考标记（32），由此所述标记被设计为被传送 在外延层（36）的外延期间。 产生初始参考标记（32），使得在外延期间，其边缘产生传播到外延层（36）的表面的生长缺陷，以便在外延层（36）的表面上提供转移的参考标记（37） 外延层，其再现初始参考标记（32）的形状并与之对齐。

公开(公告)号：EP1741131B1

公开(公告)日：2007-11-28

申请号：EP05746639.3

申请日：2005-04-20

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  Freescale Semiconductor, Inc.

发明人： DIEM, Bernard ,  BLANCHET, Eugène ,  GOGOI, Bishnu

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to level realignment following an epitaxy step on a face (31) of a substrate (30), consisting in producing at least one initial reference mark (32) on the face of the substrate, whereby said mark is designed to be transferred during the epitaxy to the surface of the epitaxy layer (36). The initial reference mark (32) is produced such that, during the epitaxy, the edges thereof create growth defects which propagate to the surface of the epitaxy layer (36) in order to provide a transferred reference mark (37) on the surface of the epitaxy layer, which reproduces the shape of the initial reference mark (32) and which is aligned therewith.

公开(公告)号：EP1641709A2

公开(公告)日：2006-04-05

申请号：EP04767542.6

申请日：2004-07-01

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： GRANGE, Hubert ,  DIEM, Bernard ,  VIOLLET, Bosson, Yylvie ,  BOREL, Michel

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/001 ,  B81C2201/115

摘要： The invention concerns a method wherein a useful layer (1) is initially connected by a sacrificial layer (2) to a layer (3) constituting a substrate. Prior to etching of the sacrificial layer (2), at least part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched, so as to increase the roughness of its doped part. Prior to doping, a mask (9) is deposited on part of the useful layer (1) so as to delimit a doped region and a non-doped region of the surface (4, 5), one of the regions constituting a stop after the surface etching phase.

公开(公告)号：EP1572575A2

公开(公告)日：2005-09-14

申请号：EP03810000.4

申请日：2003-12-18

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： DIEM, Bernard ,  DELAPIERRE, Gilles

IPC分类号： B81B7/00

CPC分类号： B81B7/007 ,  B81C2203/0145

摘要： The invention relates to an encapsulated microstructure and to a method of producing one such microstructure. The inventive microstructure comprises a first layer which is insulated from a substrate (6) by an insulting layer (7), said first layer containing: at least one sensitive element (1) which is connected to at least one contact pad (3) by means of an electrical connection (2) and which is protected by a cap (5). According to the invention, the sensitive element (1), the electrical connection (2) and the contact pad (3) form an assembly (10) that is defined in the first layer by at least one channel (11), said assembly (10) being covered by the cap (5). The cap (5), which comprises at least one opening (12) above the contact pad (3), is solidly connected to (i) the contact pad (3) at the periphery of the opening (12) and (ii) an area (9) located beyond the channel (11) in relation to the assembly (10). The invention is suitable for micro-electro-mechanical structures.

公开(公告)号：EP1761752A1

公开(公告)日：2007-03-14

申请号：EP05782184.5

申请日：2005-06-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： DE CRECY, François ,  DIEM, Bernard

IPC分类号： G01L21/12 ,  G01M3/00

CPC分类号： G01M3/002 ,  G01M3/3281

摘要： The invention relates to a method for testing the tightness of a MEMS or of a small encapsulated component, the MEMS or small component being mounted in a cavity of a support. Said cavity is closed by sealing means and contains a gas having a density different than that if it were at the pressure of the medium outside of the cavity. The method comprises a step for measuring the density of the gas contained inside the cavity.

摘要翻译： 用于MEMS或小封装部件的密封性测试方法，MEMS或小部件被容纳在载体的空腔中。 空腔被密封并且包含具有与其在空腔外部的介质的压力相同的密度的密度的气体。 该方法测量腔体中所含气体的密度。

公开(公告)号：EP1963783A2

公开(公告)日：2008-09-03

申请号：EP06847117.6

申请日：2006-12-22

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： DIEM, Bernard

IPC分类号： G01C19/56

CPC分类号： H03H9/02338 ,  G01C19/5747

摘要： The microsystem (1) is made in a planar substrate and includes two oscillating masses (2a, 2b) that are connected to the substrate via suspension springs (3a, 3b). The oscillating masses (2a, 2b) are coupled by a rigid coupling bar (11) so as to make said oscillating masses (2a, 2b) move in phase opposition when they are excited in a predetermined excitation direction (Ox). The coupling bar (11) is connected to intermediate zones of the corresponding suspension springs (3a, 3b), which are located on opposite sides (7a, 7b) of the oscillating masses (2a, 2b). The intermediate zones are located between a first end of the suspension springs (3a, 3b), which is fastened to the corresponding oscillating mass (2a, 2b), and a second end of the suspension springs (3a, 3b), which is fastened to the substrate by a corresponding anchoring point (4a, 4b).

公开(公告)号：EP1844296A1

公开(公告)日：2007-10-17

申请号：EP06743786.3

申请日：2006-02-01

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： DANEL, Jean-Sébastien ,  DIEM, Bernard

IPC分类号： G01C19/56 ,  H01G5/16

CPC分类号： G01C19/5755 ,  G01C19/5769 ,  G01P15/0802 ,  G01P15/125 ,  H01G5/16

摘要： The invention essentially relates to a variable-capacity capacitor comprising at least two interdigial combs (102, 104) which are equipped with teeth (108.1, 108.2, 108.3,... 108. n, 109.1, 109.2, 109.3, ...109. n), in which the cross-section of an end of a tooth disposed near the other comb is greater than the cross-section of an end disposed far from the other comb. The invention is particularly for gyrometers and accelerometers.

公开(公告)号：EP0795231A1

公开(公告)日：1997-09-17

申请号：EP95941162.0

申请日：1995-11-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： ROBERT, Philippe ,  DANEL, Jean-Sébastien ,  DIEM, Bernard

IPC分类号： H01L21 ,  H02N1

CPC分类号： H02N1/006

摘要： Electrostatic motor and its fabrication process, said electric motor comprising a fixed part (200, 204, 206, 208) called stator with an elastically deformable membrane (208) and a movable part (230) called rotor and arranged on the membrane (208) and moved by means of deformation waves from the elastic membrane, said electric motor being characterized in that it is provided with electrostatic means (204, 205) for deforming the membrane (208).

公开(公告)号：EP1467947A1

公开(公告)日：2004-10-20

申请号：EP02806329.5

申请日：2002-12-17

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： DIEM, Bernard ,  CAPLET, Stéphane ,  DELAYE, Marie-Thérèse

IPC分类号： B81B7/00

CPC分类号： B81B7/0077

摘要： The invention concerns a sealing zone between two microstructure substrates. Said sealing zone comprises at least the following parts: on a first wafer level (20), a lower edging (22A) made of an adhesive material capable of causing the first substrate (20) to adhere to a sealing material, said sealing material being adapted to spontaneously diffuse jointly with the material of the second wafer level (30); on said lower edging (22A), a layer of said sealing material; and on said layer of sealing material, a protuberance (36) formed on said second wafer level (30) containing a certain amount of sealing material. The invention is applicable to microstructures comprising vacuum-operated components.