专利检索 ap:("CREE, INC." OR "The Regents of The University of California") AND inv:"ZHANG, Naiqian" 第 1 页

1.

发明授权
GROUP III NITRIDE BASED FETS AND HEMTS WITH REDUCED TRAPPING AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：基于III族氮化物充电FET，HEMT结构诱捕REDUCED及其制造方法

公开(公告)号：EP1261988B1

公开(公告)日：2011-09-21

申请号：EP01905364.4

申请日：2001-02-01

申请人： CREE, INC. , The Regents of The University of California

发明人： WU, Yifeng , ZHANG, Naiqian , XU, Jian , McCARTHY, Lee

IPC分类号： H01L29/778 , H01L21/338 , H01L23/29

CPC分类号： H01L29/66863 , H01L23/291 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00

摘要： New Group III nitride based field effect transistors (10) and high electron mobility transistors (30) are disclosed that provide enhanced high frequency response characteristics. The preferred transistors (10, 30) are made from GaN/AlGaN and have a dielectric layer (22, 44) on the surface of their barrier layer (18, 38). The dielectric layer (22, 44) has a high percentage of donor electrons (68) that neutralize traps (69) in the barrier layer (18, 38) such that the traps (69) cannot slow the high frequency response of the transistors (10, 30). A new method of manufacturing the transistors (10, 30) is also disclosed, with the new method using sputtering to deposit the dielectric layer (18, 38).