公开(公告)号：EP1525586B1

公开(公告)日：2007-04-25

申请号：EP03796282.6

申请日：2003-07-24

申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY ,  PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  SRI International ,  BROWN UNIVERSITY

发明人： DEHON, Andre ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

IPC分类号： G11C13/02

CPC分类号： H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

摘要： A memory array comprising nanoscale wires (61-72) is disclosed. The nanoscale wiresare addressed by means of controllable regions (80, 82) axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires andmicroscale wires. In a two-dimensional emobdiment, memory locations (75) aredefined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing pointsbetween nanoscale wires located in different vertical layers.

公开(公告)号：EP1525586A2

公开(公告)日：2005-04-27

申请号：EP03796282.6

申请日：2003-07-24

申请人： California Institute of Technology ,  PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  Sri International ,  Brown University

发明人： DEHON, Andre ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

IPC分类号： G11C13/02

CPC分类号： H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

摘要： A memory array comprising nanoscale wires (61-72) is disclosed. The nanoscale wiresare addressed by means of controllable regions (80, 82) axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires andmicroscale wires. In a two-dimensional emobdiment, memory locations (75) aredefined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing pointsbetween nanoscale wires located in different vertical layers.

公开(公告)号：EP2694671A1

公开(公告)日：2014-02-12

申请号：EP11720230.9

申请日：2011-04-29

申请人： President and Fellows of Harvard College

发明人： LIEBER, Charles, M. ,  XIE, Ping

IPC分类号： C12Q1/68 ,  G01N33/487 ,  B82Y15/00

CPC分类号： G01N27/447 ,  B82Y15/00 ,  B82Y30/00 ,  C12Q1/6869 ,  G01N33/48721 ,  C12Q2565/631

摘要： There is provided a nanopore disposed in a support structure, with a fluidic connection between a first fluidic reservoir and an inlet to the nanopore and a second fluidic connection between a second fluidic reservoir and an outlet from the nanopore. A first ionic solution of a first buffer concentration is disposed in the first reservoir and a second ionic solution of a second buffer concentration, different than the first concentration, is disposed in the second reservoir, with the nanopore providing the sole path of fluidic communication between the first and second reservoirs. An electrical connection is disposed at a location in the nanopore sensor that develops an electrical signal indicative of electrical potential local to at least one site in the nanopore sensor as an object translocates through the nanopore between the two reservoirs.

摘要翻译： 提供了一种设置在支撑结构中的纳米孔，在第一流体储存器和纳米孔的入口之间具有流体连接，并且在第二流体储存器和来自第一缓冲液浓度的纳米孔第​​一离子溶液的出口之间的第二流体连接 设置在第一储存器中，并且将第二缓冲液浓度与第一浓度不同的第二离子溶液设置在第二储存器中，纳米孔提供第一和第二储存器之间的流体连通的唯一路径。 电连接被设置在纳米孔传感器中的位置处，当物体通过两个储存器之间的纳米孔移位时，该电信号产生指示纳米孔传感器中至少一个位点局部电势的电信号。

公开(公告)号：EP1194960B1

公开(公告)日：2010-09-15

申请号：EP00945062.8

申请日：2000-06-30

申请人： President and Fellows of Harvard College

发明人： LIEBER, Charles, M. ,  RUECKES, Thomas ,  JOSELEVICH, Ernesto ,  KIM, Kevin

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/21

CPC分类号： G11C23/00 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/285 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0595 ,  Y10S977/75 ,  Y10S977/762 ,  Y10S977/843 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/943

摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

公开(公告)号：EP1342075A2

公开(公告)日：2003-09-10

申请号：EP01990181.8

申请日：2001-12-11

申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE

发明人： LIEBER, Charles, M. ,  PARK, Hongkun ,  WEI, Qingqiao ,  CUI, Yi ,  LIANG, Wenjie

IPC分类号： G01N27/00 ,  C30B29/60 ,  H01J1/304

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

公开(公告)号：EP4109094A1

公开(公告)日：2022-12-28

申请号：EP22183113.4

申请日：2011-04-29

申请人： President and Fellows of Harvard College

发明人： LIEBER, Charles, M. ,  XIE, Ping

IPC分类号： G01N33/487 ,  C12Q1/6869 ,  B82Y30/00 ,  G01N27/414

摘要： There is provided a nanopore disposed in a support structure, with a fluidic connection between a first (cis) fluidic reservoir and an inlet to the nanopore and a second fluidic connection between a second (trans) fluidic reservoir and an outlet from the nanopore; the cis fluidic reservoir having a cis reservoir fluidic access resistance Rcis, or Rc, the trans fluidic reservoir having a trans reservoir fluidic access resistance Rtrans, or Rt, and the nanopore having a nanopore fluidic resistance Rpore, or Rp, wherein Rp is of the same order of magnitude as Rt and both Rp and Rt are at least an order of magnitude greater than Rc. As an embodiment a first ionic solution of a first buffer concentration is disposed in the first reservoir and a second ionic solution of a second buffer concentration, different than the first concentration, is disposed in the second reservoir, with the nanopore providing the sole path of fluidic communication between the first and second reservoirs. An electrical connection is disposed at a location in the nanopore sensor that develops an electrical signal indicative of electrical potential local to at least one site in the nanopore sensor as an object translocates through the nanopore between the two reservoirs.

公开(公告)号：EP2195648B1

公开(公告)日：2019-05-08

申请号：EP08830263.3

申请日：2008-09-12

申请人： President and Fellows of Harvard College

发明人： XIONG, Qihua ,  XIE, Ping ,  FANG, Ying ,  LIEBER, Charles, M.

IPC分类号： G01N33/487 ,  B82Y15/00 ,  H01L29/16 ,  G01N27/414

公开(公告)号：EP2195648A1

公开(公告)日：2010-06-16

申请号：EP08830263.3

申请日：2008-09-12

申请人： President and Fellows of Harvard College

发明人： XIONG, Qihua ,  XIE, Ping ,  FANG, Ying ,  LIEBER, Charles, M.

IPC分类号： G01N27/414 ,  C12Q1/68

CPC分类号： G01N33/48721 ,  B82Y15/00 ,  G01N27/4145 ,  H01L29/1606

摘要： A solid state molecular sensor having an aperture extending through a thickness of a sensing region is configured with a sensing region thickness that corresponds to the characteristic extent of at least a component of a molecular species to be translocated through the aperture. A change in an electrical characteristic of the sensing region is measured during the molecular species translocation. The sensor can be configured as a field effect transistor molecular sensor. The sensing region can be a region of graphene including an aperture extending through a thickness of the graphene.

公开(公告)号：EP1436841A1

公开(公告)日：2004-07-14

申请号：EP02759070.2

申请日：2002-05-20

申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE ,  University of Southampton

发明人： LIEBER, Charles, M. ,  DUAN, Xiangfeng ,  CUI, Yi ,  HUANG, Yu ,  GUDIKSEN, Mark S. ,  LAUHON, Lincoln J. ,  WANG, Jiangfang ,  PARK, Hongkun ,  WEI, Quingqiau ,  LIANG, Wenjie ,  SMITH, David C.,Uni. of Southampton ,  WANG, Deli ,  ZHONG, Zhaohui

IPC分类号： H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L33/06 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y02E10/549 ,  H01L2924/00

摘要： Published without an

公开(公告)号：EP1421026B1

公开(公告)日：2009-12-16

申请号：EP02802544.3

申请日：2002-07-22

申请人： President and Fellows of Harvard College

发明人： PARK, Hongkun ,  LIEBER, Charles, M. ,  URBAN, Jeffrey, J. ,  YUN, Wan, Soo ,  GU, Qian

IPC分类号： C01B13/18 ,  C01G23/00 ,  C01G25/02 ,  C01G25/00 ,  C01G45/02 ,  C01G45/00

CPC分类号： H01L41/1136 ,  B82Y30/00 ,  C01G23/003 ,  C01G23/006 ,  C01G25/00 ,  C01G25/006 ,  C01G45/1264 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/12 ,  C01P2004/16 ,  C01P2004/50 ,  C01P2004/64 ,  C01P2006/40 ,  C04B35/62231 ,  C04B35/6225 ,  C04B35/62259 ,  C04B35/6264 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/526 ,  C04B2235/5264 ,  H01L41/082 ,  H01L41/094 ,  H01L41/18 ,  H03H9/176 ,  H03H2009/02165 ,  H03H2009/241

摘要： Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.