摘要:
A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line.
摘要:
In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which the signals from the pixels belonging to the pixel rows of the second group are output.
摘要:
A solid-state imaging apparatus (100) comprising a plurality of pixels (201) each including a photoelectric conversion element (202, 800), and a light shielding layer (640) which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture (642) is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction (703) and a portion extending in a second direction (704) that intersects the first direction.
摘要:
In a solid-state image sensor, first and second column readout lines are provided to each pixel column, pixel rows are divided into pixel rows of first and second groups, the first group is divided into subgroups each formed from pixels of an identical color, the second group is divided into subgroups each formed from pixels of an identical color, signals from pixels of the pixel rows of the first group are output to the first column readout lines, and signals from pixels of the pixel rows of the second group are output to the second column readout lines. Pixels of an identical subgroup in an identical pixel column share a conversion region and an amplification element, a given conversion region and another conversion region included in a pixel column identical to a pixel column of the given conversion region do not intersect with each other.
摘要:
A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line.
摘要:
In an image sensor including a first column readout line and a second column readout line provided to each pixel column, a plurality of pixel rows are divided into pixel rows of a first group and pixel rows of a second group, pixels of the pixel rows of the first group output signals to the first column readout line, and pixels of the pixel rows of the second group output signals to the second column readout line. A shortest distance between a conversion region of a first pixel of a pixel row of the first group and the first column readout line to which a signal from the first pixel is output is not more than a shortest distance between the conversion region of the first pixel and the second column readout line to which the signals from the pixels belonging to the pixel rows of the second group are output.