STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND TALBOT INTERFEROMETER
    2.
    发明公开
    STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND TALBOT INTERFEROMETER 审中-公开
    STRUKTUR,VERFAHREN ZUR HERSTELLUNG DAVON UND TALBOT-INTERFEROMETER

    公开(公告)号:EP2977992A1

    公开(公告)日:2016-01-27

    申请号:EP15176032.9

    申请日:2015-07-09

    IPC分类号: G21K1/10

    摘要: A structure includes a silicon substrate (1) having a plurality of recessed portions (2), each having a bottom (3) and a side wall (7), silicide layers (4), one each in contact with the bottoms of the recessed portions, and a metal structure (5) including metal portions, one each disposed in the recessed portions and in contact with the silicide layers. The silicide layers are electrically connected to each other through the silicon substrate.

    摘要翻译: 一种结构包括具有多个凹部(2)的硅基板(1),每个具有底部(3)和侧壁(7),硅化物层(4),每个与凹陷部分 部分以及包括金属部分的金属结构(5),每个都设置在凹部中并与硅化物层接触。 硅化物层通过硅衬底彼此电连接。

    STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND TALBOT INTERFEROMETER

    公开(公告)号:EP3614398A1

    公开(公告)日:2020-02-26

    申请号:EP19192043.8

    申请日:2015-07-09

    IPC分类号: G21K1/10

    摘要: A structure includes a silicon substrate (1) having a plurality of recessed portions (2), each having a bottom (3) and a side wall (7), silicide layers (4), one each in contact with the bottoms of the recessed portions, and a metal structure (5) including metal portions, one each disposed in the recessed portions and in contact with the silicide layers. The silicide layers are electrically connected to each other through the silicon substrate.