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公开(公告)号：EP2710415A1
公开(公告)日：2014-03-26
申请号：EP12720522.7
申请日：2012-05-15
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/2008 , B82Y10/00 , G02B1/105 , G02B1/14 , G02B5/0816 , G02B5/0891 , G02B19/0095 , G02B27/0006 , G03F7/2004 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , G21K2201/067 , Y10T428/265
摘要： In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
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3.发明公开MIRROR FOR THE EUV WAVELENGTH RANGE, METHOD FOR PRODUCING SUCH A MIRROR, AND PROJECTION EXPOSURE APPARATUS COMPRISING SUCH A MIRROR 审中-公开镜子对EUV波长范围，用于制备这种一面镜子，投射曝光装置这样的镜子
公开(公告)号：EP2823490A1
公开(公告)日：2015-01-14
申请号：EP13716191.5
申请日：2013-03-06
申请人： Carl Zeiss SMT GmbH
IPC分类号： G21K1/06
CPC分类号： G03F7/702 , B82Y10/00 , C23C14/06 , C23C14/35 , G02B5/0891 , G03F7/70316 , G21K1/062
摘要： The invention relates to a mirror (1) for the EUV wavelength range having a reflectivity of greater than 40% for at least one angle of incidence of between 0° and 25°, comprising a substrate (S) and a layer arrangement, wherein the layer arrangement comprises at least one non-metallic individual layer (B, H, M), and wherein the non-metallic individual layer (B, H, M) has a doping with impurity atoms of between 10 ppb and 10%, in particular between 100 ppb and 0.1%, such that a charge carrier density of greater than 6*10
10 cm
-3 and/or an electrical conductivity of greater than 1*10
-3 S/m, in particular a charge carrier density of greater than 6*10
13 cm
-3 and/or an electrical conductivity of greater than 1 S/m, are/is afforded for the non-metallic individual layer (B, H, M).摘要翻译： 对于具有大于40％的反射率为0和25℃之间发生率中的至少一个角度的EUV波长范围内的底物镜（1）包括：（S）和层布置，worin层布置具有至少 一个非金属单独层（B，H，M），并worin非金属单独层（B，H，M）具有特别为100ppb和0.1之间用10ppb的和10％之间，在杂质原子的掺杂 ％，提供非金属单独层（B，H，M）具有大于6 *1010厘米-3和/或大于1×10-3 S /米的导电性的电荷载流子密度，特别 具有大于6 * 10 13 cm -3的和/或上的大于1 S /米的导电性的电荷载流子密度。
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公开(公告)号：EP2710415B1
公开(公告)日：2018-07-04
申请号：EP12720522.7
申请日：2012-05-15
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/2008 , B82Y10/00 , G02B1/105 , G02B1/14 , G02B5/0816 , G02B5/0891 , G02B19/0095 , G02B27/0006 , G03F7/2004 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , G21K2201/067 , Y10T428/265
摘要： In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
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公开(公告)号：EP3100083A1
公开(公告)日：2016-12-07
申请号：EP15705920.5
申请日：2015-01-29
申请人： Carl Zeiss SMT GmbH
CPC分类号： G03F7/702 , G02B5/0816 , G02B5/0891 , G02B5/09 , G02B5/10 , G02B26/0833 , G21K1/062 , G21K2201/064
摘要： The invention relates to a method for producing a mirror element, more particularly for a microlithographic projection exposure apparatus. A method according to the invention comprises the following steps: providing a substrate (101, 102, 103, 104, 201, 202, 301, 302, 401, 402, 501, 502, 801, 901, 951, 961) and forming a layer stack (111, 112, 113, 114, 211, 212, 311, 312, 411, 412, 511, 512) on the substrate, wherein forming the layer stack is carried out in such a way that a desired curvature - wanted for a predefined operating temperature - of the mirror element is produced by a bending force exerted by the layer stack, wherein, before the layer stack is formed, the substrate has a curvature deviating from said desired curvature of the mirror element, and wherein the bending force exerted by the layer stack is at least partly produced by an aftertreatment for altering the layer stress of the layer stack being carried out.
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公开(公告)号：EP2841996A1
公开(公告)日：2015-03-04
申请号：EP13712509.2
申请日：2013-03-14
申请人： Carl Zeiss SMT GmbH
发明人： HUBER, Peter , DIER, Oliver
CPC分类号： G02F1/0128 , B82Y10/00 , G02B5/0816 , G02B5/0891 , G02B17/06 , G02B26/0816 , G02B27/0068 , G03F7/2008 , G03F7/70266 , G03F7/70891 , G03F7/7095 , G03F7/70958 , G21K1/062
摘要： The invention relates to an optical element (21) comprising a substrate (30) and a reflective coating (31). The reflective coating (31) has, in particular for the reflection of EUV radiation, a plurality of layer pairs having alternate layers (33a, 33b) composed of a high refractive index material and a low refractive index material, wherein at least one active layer (34) composed of a magnetostrictive material is formed within the reflective coating (31). The invention also relates to an optical element (21) having a substrate (30) and a reflective coating (31), wherein the optical element (21 ) comprises at least one first active layer comprising a material having positive magnetostriction and at least one second active layer comprising a material having negative magnetostriction, wherein the layer thicknesses and the layer materials of the active layers are chosen such that mechanical stress changes or changes in length of the active layers that are produced by a magnetic field mutually compensate for one another. The invention also relates to an optical arrangement, in particular an EUV lithography apparatus, which comprises at least one such optical element (21).
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