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公开(公告)号:EP3368948A1
公开(公告)日:2018-09-05
申请号:EP16788086.3
申请日:2016-10-26
申请人: Carl Zeiss SMT GmbH
摘要: An optical assembly includes an optical element (13), configured in particular for the reflection of EUV radiation (4), and a protective element (30) for protecting a surface (31) of the optical element (13, 14) from contaminating substances (P). The protective element (30) has a membrane (33a-c) and a frame (34) on which the membrane (33a-c) is mounted. The membrane is formed by a plurality of membrane segments (33a, 33b, 33c) which respectively protect a partial region (T) of the surface (31) of the optical element (13) from the contaminating substances (P). The optical assembly can form part of an overall optical arrangement, for example an EUV lithography system.
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公开(公告)号:EP2710415A1
公开(公告)日:2014-03-26
申请号:EP12720522.7
申请日:2012-05-15
申请人: Carl Zeiss SMT GmbH
CPC分类号: G03F7/2008 , B82Y10/00 , G02B1/105 , G02B1/14 , G02B5/0816 , G02B5/0891 , G02B19/0095 , G02B27/0006 , G03F7/2004 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , G21K2201/067 , Y10T428/265
摘要: In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
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公开(公告)号:EP2580626A1
公开(公告)日:2013-04-17
申请号:EP11726128.9
申请日:2011-06-14
申请人: Carl Zeiss SMT GmbH
IPC分类号: G03F7/20
CPC分类号: G21K5/04 , G03F7/70233 , G03F7/70916
摘要: To prevent reflective optical elements (2) for EUV lithography from getting electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, comprising a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles can be applied to the reflective optical element (2), wherein the source (3) is a flood gun applying electrons to the reflective optical element (2) as only means for charge carrier compensation.
摘要翻译: 为了防止用于EUV光刻的反射光学元件(2)在被EUV辐射(4)照射时被带电,提出了一种用于EUV光刻的光学系统,其包括反射光学元件(2),其包括衬底(21) 具有当用EUV辐射(4)照射时发射二次电子的高反射涂层(22)和带电粒子的源(3),其以这样的方式排列,使得可以将带电粒子施加到反射光学元件 (2),其中所述源(3)是作为用于电荷载流子补偿的唯一装置将电子施加到所述反射光学元件(2)的泛光枪。
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公开(公告)号:EP3491468A1
公开(公告)日:2019-06-05
申请号:EP17740385.4
申请日:2017-07-17
申请人: Carl Zeiss SMT GmbH
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公开(公告)号:EP2710415B1
公开(公告)日:2018-07-04
申请号:EP12720522.7
申请日:2012-05-15
申请人: Carl Zeiss SMT GmbH
CPC分类号: G03F7/2008 , B82Y10/00 , G02B1/105 , G02B1/14 , G02B5/0816 , G02B5/0891 , G02B19/0095 , G02B27/0006 , G03F7/2004 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , G21K2201/067 , Y10T428/265
摘要: In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.
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公开(公告)号:EP4139750A1
公开(公告)日:2023-03-01
申请号:EP21720436.1
申请日:2021-04-19
申请人: Carl Zeiss SMT GmbH
发明人: BECKER, Moritz , EHM, Dirk Heinrich
IPC分类号: G03F7/20
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公开(公告)号:EP3933882A1
公开(公告)日:2022-01-05
申请号:EP20183384.5
申请日:2020-07-01
申请人: Carl Zeiss SMT GmbH , Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO
发明人: ROOZEBOOM, Fred , EHM, Dirk Heinrich , BECKER, Moritz , SCHMIDT, Stefan Wolfgang , CREIJGHTON, Yves Lodewijk Maria , SMELTINK, Jeroen , EIJNDEN, Edwin van den
IPC分类号: H01J37/32 , C23C16/455 , H01L21/02 , G03F7/20
摘要: The invention relates to an atomic layer processing apparatus (1) for atomic layer processing of an optical surface (4) of an optical element (2) preferably configured to reflect EUV radiation, the apparatus (1) comprising: a processing chamber (3), and at least one processing head (5) configured for atomic layer processing of the optical surface (4) of the optical element (2) within the processing chamber (3). The at least one processing head (5) is configured to perform atomic layer processing of a curved optical surface (4) of the optical element (2). The invention also relates to a method for atomic layer processing of an optical surface (4) of an optical element (2), preferably configured to reflect EUV radiation.
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公开(公告)号:EP3649510A1
公开(公告)日:2020-05-13
申请号:EP18737868.2
申请日:2018-07-03
申请人: Carl Zeiss SMT GmbH
发明人: ROOZEBOOM, Fred , EHM, Dirk Heinrich , ILLIBERI, Andrea , BECKER, Moritz , TE SLIGTE, Edwin , CREIJGHTON, Yves Lodewijk Maria
IPC分类号: G03F7/20
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