公开(公告)号：EP2598947A1

公开(公告)日：2013-06-05

申请号：EP11740883.1

申请日：2011-07-28

申请人： Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

发明人： BAER, Norman ,  LOERING, Ulrich ,  NATT, Oliver ,  WITTICH, Gero ,  LAUFER, Timo ,  KUERZ, Peter ,  LIMBACH, Guido ,  HEMBACHER, Stefan ,  WALTER, Holger ,  KWAN, Yim-Bun-Patrick ,  HAUF, Markus ,  STICKEL, Franz-Josef ,  VAN SCHOOT, Jan

IPC分类号： G03F7/20 ,  G21K1/06 ,  G02B5/08

CPC分类号： G03F7/7015 ,  B82Y10/00 ,  G02B3/00 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G02B7/1815 ,  G02B17/0647 ,  G02B27/0043 ,  G03B27/542 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70316 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064

摘要： A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

摘要翻译： 具有至少两个反射光学元件的EUV光刻投影曝光系统的投影透镜，每个反射光学元件包括主体和用于将掩模版上的物场投影到基板上的图像场上的反射表面，如果投影透镜曝光 EUV光的功率，其中至少两个反射光学元件的主体包括在相应的零交叉温度下具有温度依赖的热膨胀系数为零的材料，并且其中零交叉温度之间的差的绝对值更多 超过6K。

公开(公告)号：EP2126636B1

公开(公告)日：2012-06-13

申请号：EP08715667.5

申请日：2008-01-30

申请人： Carl Zeiss SMT GmbH

发明人： DIECKMANN, Nils ,  MAUL, Manfred ,  HETTICH, Christian ,  NATT, Oliver

IPC分类号： G03F7/20

CPC分类号： G03F7/70191

摘要： An illumination system of a microlithographic projection exposure apparatus comprises at least one transmission filter (66; 166; 266; 366; 466; 566; 666; 666'; 766, 766'; 866, 866') which has a different transmittance at least at two positions and which is arranged between a pupil plane (42, 60) and a field plane (52, 58). The transmittance distribution is determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.