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1.发明授权PROCÉDÉ DE FABRICATION D'UN IMPLANT SOUPLE RÉTINIEN INTRAOCULAIRE À ÉLECTRODES EN DIAMANT DOPÉ 有权用于生产一柔性眼内视网膜植入物，其中掺杂金刚石电极
公开(公告)号：EP2579940B1
公开(公告)日：2014-03-19
申请号：EP11725709.7
申请日：2011-06-08
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Chambre de Commerce et d'Industrie de Paris (Esiee Paris)
发明人： SCORSONE, Emmanuel , BERGONZO, Philippe , BONNAURON, Mathias , LISSORGUES, Gaëlle , ROUSSEAU, Lionel
CPC分类号： H01L21/64 , A61N1/0543 , A61N1/36046 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02639 , H01L29/1602 , H01L29/45
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2.发明公开PROCEDE DE FABRICATION D'UN IMPLANT SOUPLE RETINIEN INTRAOCULAIRE A ELECTRODES EN DIAMANT DOPE 有权用于生产一柔性眼内视网膜植入物，其中掺杂金刚石电极
公开(公告)号：EP2579940A1
公开(公告)日：2013-04-17
申请号：EP11725709.7
申请日：2011-06-08
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Chambre de Commerce Et d'Industrie de Paris (Esiee Paris)
发明人： SCORSONE, Emmanuel , BERGONZO, Philippe , BONNAURON, Mathias , LISSORGUES, Gaëlle , ROUSSEAU, Lionel
CPC分类号： H01L21/64 , A61N1/0543 , A61N1/36046 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02639 , H01L29/1602 , H01L29/45
摘要： The invention relates to a method for manufacturing an intraocular retinal implant including a flexible plate made of insulating material, one face of which is provided with a plurality of electrodes made of doped diamond connected to interconnection lines. Said method includes providing a mold capable of supporting the growth of a layer of doped diamond, said mold comprising, on one of the faces thereof, a set of elements which are all depressed or all projecting with respect to the surface of said face, and which constitute a cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of the space occupied by the elements of the cavity; forming a first insulating layer on the face of the mold comprising the cavity; producing the interconnection lines by depositing an electrically conductive material at least in the spaces not covered by the first insulating layer; forming a second insulating layer on the face of the mold including the cavity, said second layer covering the interconnection lines, the first and second insulating layers forming the flexible plate of the implant; and removing the mold.
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3.发明公开BIOCOMPATIBLE CARBON BASED ELECTRODE AND ITS PREPARATION PROCESS 有权BENKOMPATIBLE KOHLENSTOFFBASIERTE ELEKTRODE UND DEREN HERSTELLUNGSVERFAHREN
公开(公告)号：EP2936578A1
公开(公告)日：2015-10-28
申请号：EP13821829.2
申请日：2013-12-24
申请人： Université Pierre et Marie Curie (Paris 6) , Centre National de la Recherche Scientifique , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： PICAUD, Serge , BENDALI, Amel , BERGONZO, Philippe , FOSTER-FRADOT, Valérie , SAHEL, José-Alain
IPC分类号： H01L51/00 , A61N1/05 , B82Y5/00 , C12N5/0793 , A61N1/36
CPC分类号： A61N1/0526 , A61N1/05 , A61N1/0541 , A61N1/0543 , A61N1/0551 , A61N1/36007 , A61N1/36036 , A61N1/36046 , B82Y5/00
摘要： An electrode comprising a biocompatible chemically oxygen terminated or H-terminated carbon-based material, the surface of which is substantially free of any peptide coating and promotes the growth or at least the direct interfacing of adult neurons on said material without substantially promoting the growth and direct interfacing of glial cells on said material, said carbon-based material having an electrical conductivity of at least about 0.01S/cm, in particular 1S/cm, said material being in particular selected from the group consisting of nanocrystalline diamond which is doped by either boron, phosphorus or nitrogen, to become a semiconductor, or graphene, nanotubes, or nanotubes on diamond. Further disclosed is a use of said electrode as well as a process of preparation of said electrode.
摘要翻译： 一种电极，其包含生物相容的化学氧封端或H-封端的碳基材料，其表面基本上不含任何肽包衣，并促进成年神经元在所述材料上的生长或至少直接接合，而不显着地促进生长和 胶体细胞在所述材料上的直接接合，所述碳基材料具有至少约0.01S / cm，特别是1S / cm的电导率，所述材料特别地选自纳米晶体金刚石，其由 硼，磷或氮，成为金刚石上的半导体，或石墨烯，纳米管或纳米管。 还公开了所述电极的用途以及所述电极的制备方法。
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4.发明授权SUBSTRAT DE TYPE SEMI-CONDUCTEUR SUR ISOLANT A COUCHES DE DIAMANT INTRINSEQUE ET DOPE 有权具有内在和掺杂的金刚石薄膜涂层半导体衬底上的隔离器
公开(公告)号：EP2304788B1
公开(公告)日：2012-07-04
申请号：EP09802507.5
申请日：2009-07-28
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254 , H01L21/76256 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor substrate (100) comprising at least: a doped-diamond-based film (106) with a thickness equal to or greater than 10µm; a layer (102) based on at least one semiconductor or a multilayer stack that includes the semiconductor-based layer; and an intrinsic-diamond-based film (104) placed on the doped-diamond-based film, i.e. between the doped-diamond-based film and the semiconductor-based layer.
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5.发明公开
公开(公告)号：EP2769395A1
公开(公告)日：2014-08-27
申请号：EP12775496.8
申请日：2012-10-18
发明人： LEGAGNEUX, Pierre , BERGONZO, Philippe , BONDAVALLI, Paolo , MAZELLIER, Jean-Paul , SCORSONE, Emmanuel
摘要： The invention relates to a collector-electrode assembly which can be integrated into an electrical energy storage device. The assembly comprises a stack formed by a highly conductive collector comprising a substrate (8) and an electrode including a nano-structured active layer (12) made up of a network of nano-structures. The collector-electrode assembly is characterized in that the nano-structured active layer (12) is covered with a layer (14) comprising diamond nanoparticles (20). The invention also relates to an associated energy storage device and an associated production method.
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公开(公告)号：EP2936578B1
公开(公告)日：2017-11-01
申请号：EP13821829.2
申请日：2013-12-24
申请人： Université Pierre et Marie Curie (Paris 6) , Centre National de la Recherche Scientifique , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： PICAUD, Serge , BENDALI, Amel , BERGONZO, Philippe , FOSTER-FRADOT, Valérie , SAHEL, José-Alain
IPC分类号： H01L51/00 , A61N1/05 , B82Y5/00 , C12N5/0793 , A61N1/36
CPC分类号： A61N1/0526 , A61N1/05 , A61N1/0541 , A61N1/0543 , A61N1/0551 , A61N1/36007 , A61N1/36036 , A61N1/36046 , B82Y5/00
摘要： An electrode comprising a biocompatible chemically oxygen terminated or H-terminated carbon-based material, the surface of which is substantially free of any peptide coating and promotes the growth or at least the direct interfacing of adult neurons on said material without substantially promoting the growth and direct interfacing of glial cells on said material, said carbon-based material having an electrical conductivity of at least about 0.01S/cm, in particular 1S/cm, said material being in particular selected from the group consisting of nanocrystalline diamond which is doped by either boron, phosphorus or nitrogen, to become a semiconductor, or graphene, nanotubes, or nanotubes on diamond. Further disclosed is a use of said electrode as well as a process of preparation of said electrode.
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7.发明授权
公开(公告)号：EP2769395B1
公开(公告)日：2016-01-06
申请号：EP12775496.8
申请日：2012-10-18
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8.发明公开SUBSTRAT DE TYPE SEMI-CONDUCTEUR SUR ISOLANT A COUCHES DE DIAMANT INTRINSEQUE ET DOPE 有权具有内在和掺杂的金刚石薄膜涂层半导体衬底上的隔离器
公开(公告)号：EP2304788A1
公开(公告)日：2011-04-06
申请号：EP09802507.5
申请日：2009-07-28
IPC分类号： H01L21/762 , H01L27/12
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254 , H01L21/76256 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor substrate (100) comprising at least: a doped-diamond-based film (106) with a thickness equal to or greater than 10µm; a layer (102) based on at least one semiconductor or a multilayer stack that includes the semiconductor-based layer; and an intrinsic-diamond-based film (104) placed on the doped-diamond-based film, i.e. between the doped-diamond-based film and the semiconductor-based layer.
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