公开(公告)号：EP3522204B1

公开(公告)日：2020-07-29

申请号：EP19163652.1

申请日：2004-08-12

申请人： Cree, Inc.

发明人： SLATER, David, B, Jr. ,  EDMOND, John, A. ,  DONOFRIO, Matthew

IPC分类号： H01L21/28 ,  H01L21/268

公开(公告)号：EP3522204A3

公开(公告)日：2019-08-21

申请号：EP19163652.1

申请日：2004-08-12

申请人： Cree, Inc.

发明人： SLATER, David, B, Jr. ,  EDMOND, John, A. ,  DONOFRIO, Matthew

IPC分类号： H01L21/28 ,  H01L21/268

摘要： A method of forming an ohmic contact for a semiconductor device, the ohmic contact having a specific contact resistivity of less than 10 e-03 ohm-cm 2 , the method comprising: forming a metal on a Silicon Carbide (SiC) substrate opposite a stack of n/p type epitaxial layers; and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at another location on the SiC substrate to avoid forming the metal-SiC material thereat, the annealing being carried out with laser light having photon energies above a bandgap of the SiC substrate.

公开(公告)号：EP1661170B1

公开(公告)日：2019-04-03

申请号：EP04780967.8

申请日：2004-08-12

申请人： Cree, Inc.

发明人： SLATER, David, B, Jr. ,  EDMOND, John, A. ,  DONOFRIO, Matthew

IPC分类号： H01L33/40 ,  H01L21/268

公开(公告)号：EP1661170A1

公开(公告)日：2006-05-31

申请号：EP04780967.8

申请日：2004-08-12

申请人： CREE, INC.

发明人： SLATER, David, B, Jr. ,  EDMOND, John, A. ,  DONOFRIO, Matthew

IPC分类号： H01L21/28 ,  H01L21/268 ,  H01L21/263 ,  H01L33/00 ,  H01L21/60

CPC分类号： H01L33/40 ,  H01L21/0272 ,  H01L21/0485 ,  H01L21/2636 ,  H01L21/268 ,  H01L33/0095 ,  H01L33/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at a location on the SiC substrate to avoid forming the metal-SiC material thereat.

摘要翻译： 通过在碳化硅（SiC）衬底上形成金属并对金属和SiC衬底的界面位置进行退火以在其上形成金属SiC材料并且避免在SiC上的位置处退火，可以形成用于半导体器件的触点 衬底以避免在其上形成金属SiC材料。