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    LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS
    3.
    发明公开
    LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS 审中-公开

    公开(公告)号：EP3522204A3

    公开(公告)日：2019-08-21

    申请号：EP19163652.1

    申请日：2004-08-12

    申请人： Cree, Inc.

    发明人： SLATER, David, B, Jr. ,  EDMOND, John, A. ,  DONOFRIO, Matthew

    IPC分类号： H01L21/28 ,  H01L21/268

    摘要： A method of forming an ohmic contact for a semiconductor device, the ohmic contact having a specific contact resistivity of less than 10 e-03 ohm-cm 2 , the method comprising: forming a metal on a Silicon Carbide (SiC) substrate opposite a stack of n/p type epitaxial layers; and annealing an interface location of the metal and the SiC substrate to form a metal-SiC material thereat and avoiding annealing at another location on the SiC substrate to avoid forming the metal-SiC material thereat, the annealing being carried out with laser light having photon energies above a bandgap of the SiC substrate.

    IMPROVED EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES
    4.
    发明公开
    IMPROVED EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES 有权
    基于结晶FACETED SURFACES具有改进的外部取出发光二极管

    公开(公告)号：EP1979955A1

    公开(公告)日：2008-10-15

    申请号：EP07716846.6

    申请日：2007-01-19

    申请人： CREE, INC.

    发明人： EDMOND, John, A. ,  DONOFRIO, Matthew ,  SLATER, David, B., Jr. ,  KONG, Hua-Shuang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

    摘要： A light emitting diode (20) is disclosed that includes a support structure (21) and a Group III nitride light emitting active structure (22) mesa (23) on the support structure (21) . The mesa (23) has its sidewalls (24) along an indexed crystal plane of the Group III nitride . A method of forming the diode (20) is also disclosed that includes the steps of removing a substrate (43) from a Group III nitride light emitting structure that includes a sub-mount structure (45) on the Group III nitride light emitting active structure (44) opposite the substrate (43) , and thereafter etching the surface (53) of the Group III nitride from which the substrate (43) has been removed with an anisotropic etch to develop crystal facets on the surface (53) in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting active structure (44) with an anisotropic etch to form a mesa (23, 51) with edges along an index plane of the Group III nitride.

    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY
    8.
    发明公开
    LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY 审中-公开
    具有改进的镜面反射率的LED结构

    公开(公告)号：EP2724386A1

    公开(公告)日：2014-04-30

    申请号：EP12723543.0

    申请日：2012-04-20

    申请人： Cree, Inc.

    发明人： BERGMANN, Michael ,  DONOFRIO, Matthew ,  HEIKMAN, Sten ,  SCHNEIDER, Kevin, S. ,  HABERERN, Kevin, W. ,  EDMOND, John, A.

    IPC分类号： H01L33/40

    CPC分类号： H01L33/60 ,  H01L33/08 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

    摘要： Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light - absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip (200) comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror (206), and a barrier layer (208) adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator (210) is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact (222,224) is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip.

    LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR
    9.
    发明公开
    LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR 审中-公开
    白细胞介素BIBRIESESCHICHTEN UND HERSTELLUNGSVEFAHREN

    公开(公告)号：EP1523776A2

    公开(公告)日：2005-04-20

    申请号：EP03765562.8

    申请日：2003-07-15

    申请人： CREE, INC.

    发明人： SLATER, JR., David, B. ,  WILLIAMS, Bradley, E. ,  ANDREWS, Peter, S. ,  EDMOND, John, A. ,  ALLEN, Scott, T. ,  BHARATHAN, Jayesh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L2933/0016

    摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive Stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive Stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive Stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。