摘要:
A light emitting diode (LED) package (30) having increased feature sizes for improved luminous flux and efficacy. A LED chip (34) is disposed on a submount (32) with a lens (70) that covers the LED chip. In some cases, the ratio of the width of the light LED chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to • emit light more efficiently. Some packages, include submounts having dimensions greater than 3.5 mm per 3.5 mm used in conjunction with larger LED chips. Materials having high thermal conductivities are used to fabricate the submounts, such as APN, providing the package with better thermal management.
摘要:
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 A and a specific contact resistivity less than about 10-3 ohm-cm2.