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    HIGH EFFICIENCY LIGHT EMITTERS WITH REDUCED POLARIZATION-INDUCED CHARGES
    1.
    发明公开
    HIGH EFFICIENCY LIGHT EMITTERS WITH REDUCED POLARIZATION-INDUCED CHARGES 审中-公开
    具有减少极化感应电荷高产高效发光

    公开(公告)号：EP1266411A2

    公开(公告)日：2002-12-18

    申请号：EP00980912.0

    申请日：2000-11-30

    申请人： Cree Lighting Company

    发明人： THIBEAULT, Brian ,  IBBETSON, James

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/16

    摘要： Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers (2-7) grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers (2-7), grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.

    FABRICATION OF SEMICONDUCTOR MATERIALS AND DEVICES WITH CONTROLLED ELECTRICAL CONDUCTIVITY
    2.
    发明公开
    FABRICATION OF SEMICONDUCTOR MATERIALS AND DEVICES WITH CONTROLLED ELECTRICAL CONDUCTIVITY 审中-公开
    用于生产半导体材料和具有确定电导率

    公开(公告)号：EP1269520A2

    公开(公告)日：2003-01-02

    申请号：EP01916604.0

    申请日：2001-03-13

    申请人： Cree Lighting Company

    发明人： KAPOLNEK, David ,  THIBEAULT, Brian

    IPC分类号： H01L21/00 ,  H01L21/205

    CPC分类号： H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3228 ,  H01L33/44

    摘要： A method for protecting the surface of a semiconductor material (30, 50) from damage and dopant passivation is described. A barrier layer (32, 52) of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor (10) such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer (32, 52) blocks the diffusion of hydrogen into the material. The reactor (10) can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor (10) with little or no passivation of the dopant species. The barrier layer (32, 52) can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer (32, 52) can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.

    SCALABLE LED WITH IMPROVED CURRENT SPREADING STRUCTURES
    3.
    发明公开
    SCALABLE LED WITH IMPROVED CURRENT SPREADING STRUCTURES 有权
    具有改进的电源分配结构可扩展的发光二极管

    公开(公告)号：EP1234343A1

    公开(公告)日：2002-08-28

    申请号：EP00979221.9

    申请日：2000-11-22

    申请人： Cree Lighting Company

    发明人： TARSA, Eric, J. ,  THIBEAULT, Brian ,  IBBETSON, James ,  MACK, Michael

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/64

    摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer (14), improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates (12) but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers (20a, 20b, 22) that form cooperating conductive paths that ensure that current spreads from the contacts (19, 21), into the fingers (20a, 20b, 22) and uniformly spreads through the oppositely doped layers (15, 16). The current then spreads to the active layer (14) to uniformly inject electrons and holes throughout the active layer (14), which recombine to emit light.

    ENHANCED LIGHT EXTRACTION IN LEDS THROUGH THE USE OF INTERNAL AND EXTERNAL OPTICAL ELEMENTS
    6.
    发明公开
    ENHANCED LIGHT EXTRACTION IN LEDS THROUGH THE USE OF INTERNAL AND EXTERNAL OPTICAL ELEMENTS 审中-公开
    发光具有改进的光传输的二极管，使用内部和外部光学元件

    公开(公告)号：EP1234344A2

    公开(公告)日：2002-08-28

    申请号：EP00992180.0

    申请日：2000-11-28

    申请人： Cree Lighting Company

    发明人： THIBEAULT, Brian ,  MACK, Michael ,  DENBAARS, Steven, P.

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/44 ,  H01L2933/0091 ,  Y10S977/712 ,  Y10S977/834

    摘要： This invention describes new LEDs having light extraction structures (26) on or within the LED to increase its efficiency. The new light extraction structures (26) provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements (42, 44, 46, 48, 50, 52) or disperser layers (112, 122, 134, 144, 152, 162). The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.