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公开(公告)号：EP1234343A1
公开(公告)日：2002-08-28
申请号：EP00979221.9
申请日：2000-11-22
IPC分类号： H01L33/00
摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer (14), improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates (12) but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers (20a, 20b, 22) that form cooperating conductive paths that ensure that current spreads from the contacts (19, 21), into the fingers (20a, 20b, 22) and uniformly spreads through the oppositely doped layers (15, 16). The current then spreads to the active layer (14) to uniformly inject electrons and holes throughout the active layer (14), which recombine to emit light.
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公开(公告)号：EP1234334A1
公开(公告)日：2002-08-28
申请号：EP00980675.3
申请日：2000-11-20
发明人： DENBAARS, Steven , Thibeault, Brian
IPC分类号： H01L27/15 , H01L25/075 , H01L33/00
摘要： A light emitting diode (LED) (10) comprises a first spreader layer (20), an array of light emitting elements (12) disposed on the first spreader layer (20), and a second spreader layer (24) disposed over the array of emitting elements (12). The first spreader layer (20) is electrically isolated from the second spreader layer (24). The LED (10) also comprises first and second contacts (22, 26) on the first and second spreader layers (20, 24) respectively. A bias applied across the contacts (22, 26) causes the array of emitting elements (12) to emit light.
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公开(公告)号：EP1230686A1
公开(公告)日：2002-08-14
申请号：EP00989194.6
申请日：2000-11-01
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) (10) grown on a substrate (16) doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer (11), pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs (10) emitting UV light and grown on a sapphire substrate (16) doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface.
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4.发明公开FABRICATION OF SEMICONDUCTOR MATERIALS AND DEVICES WITH CONTROLLED ELECTRICAL CONDUCTIVITY 审中-公开用于生产半导体材料和具有确定电导率
公开(公告)号：EP1269520A2
公开(公告)日：2003-01-02
申请号：EP01916604.0
申请日：2001-03-13
发明人： KAPOLNEK, David , THIBEAULT, Brian
IPC分类号： H01L21/00 , H01L21/205
CPC分类号： H01L33/325 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L21/3228 , H01L33/44
摘要： A method for protecting the surface of a semiconductor material (30, 50) from damage and dopant passivation is described. A barrier layer (32, 52) of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor (10) such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer (32, 52) blocks the diffusion of hydrogen into the material. The reactor (10) can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor (10) with little or no passivation of the dopant species. The barrier layer (32, 52) can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer (32, 52) can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
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公开(公告)号：EP1326291A1
公开(公告)日：2003-07-09
申请号：EP03075791.8
申请日：2000-11-01
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with cromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface.
摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸引到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光的氮化物基LED，并且在掺有溴化镓的蓝宝石衬底上生长。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们返回到平衡状态时，它们发出红光，一些红光将从LED的表面发射。
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公开(公告)号：EP1234139A1
公开(公告)日：2002-08-28
申请号：EP00978402.6
申请日：2000-11-08
发明人： TARSA, Eric, J. , THIBEAULT, Brian
CPC分类号： F21V29/74 , F21K9/232 , F21K9/61 , F21K9/64 , F21K9/68 , F21V7/0091 , F21V9/00 , F21V29/75 , F21V29/767 , F21Y2113/13 , F21Y2115/10 , F21Y2115/30 , G02B6/0008 , H01L33/505 , H01L33/58 , H01L33/60
摘要： A method of reducing power consumption of power amplifiers in Customer Premises Equipment (CPE) is disclosed. The power amplifier is evaluated and the Error Vector Magnitude (EVM) performance of the amplifier is modeled to obtain optimal bias voltage for the amplifier for a given modulation scheme and input signal power level. The method comprises of checking Error Vector Magnitude (EVM) for present bias and present input signal power levels of the power amplifiers, calculating optimal bias voltage for required modulation and coding scheme and biasing the power amplifier with the optimal bias voltage. The optimal bias voltage for the power amplifier can be determined either by using mathematical equations or using a look-up table.
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7.发明公开
公开(公告)号：EP1266411A2
公开(公告)日：2002-12-18
申请号：EP00980912.0
申请日：2000-11-30
发明人： THIBEAULT, Brian , IBBETSON, James
IPC分类号： H01L33/00
摘要： Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers (2-7) grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers (2-7), grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.
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8.发明公开GROUP III NITRIDE BASED FETS AND HEMTS WITH REDUCED TRAPPING AND METHOD FOR PRODUCING THE SAME 有权基于III族氮化物充电FET，HEMT结构诱捕REDUCED及其制造方法
公开(公告)号：EP1261988A1
公开(公告)日：2002-12-04
申请号：EP01905364.4
申请日：2001-02-01
发明人： WU, Yifeng , ZHANG, Naiqian , XU, Jian , McCARTHY, Lee
IPC分类号： H01L29/778 , H01L29/06 , H01L23/29
CPC分类号： H01L29/66863 , H01L23/291 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： New Group III nitride based field effect transistors (10) and high electron mobility transistors (30) are disclosed that provide enhanced high frequency response characteristics. The preferred transistors (10, 30) are made from GaN/AlGaN and have a dielectric layer (22, 44) on the surface of their barrier layer (18, 38). The dielectric layer (22, 44) has a high percentage of donor electrons (68) that neutralize traps (69) in the barrier layer (18, 38) such that the traps (69) cannot slow the high frequency response of the transistors (10, 30). A new method of manufacturing the transistors (10, 30) is also disclosed, with the new method using sputtering to deposit the dielectric layer (18, 38).
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9.发明公开ENHANCED LIGHT EXTRACTION IN LEDS THROUGH THE USE OF INTERNAL AND EXTERNAL OPTICAL ELEMENTS 审中-公开发光具有改进的光传输的二极管，使用内部和外部光学元件
公开(公告)号：EP1234344A2
公开(公告)日：2002-08-28
申请号：EP00992180.0
申请日：2000-11-28
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/44 , H01L2933/0091 , Y10S977/712 , Y10S977/834
摘要： This invention describes new LEDs having light extraction structures (26) on or within the LED to increase its efficiency. The new light extraction structures (26) provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. The structures can be arrays of light extraction elements (42, 44, 46, 48, 50, 52) or disperser layers (112, 122, 134, 144, 152, 162). The light extraction elements can have many different shapes and are placed in many locations to increase the efficiency of the LED over conventional LEDs. The disperser layers provide scattering centers for light and can be placed in many locations as well. The new LEDs with arrays of light extraction elements are fabricated with standard processing techniques making them highly manufacturable at costs similar to standard LEDs. The new LEDs with disperser layers are manufactured using new methods and are also highly manufacturable.
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