公开(公告)号：EP2546385A4

公开(公告)日：2013-08-07

申请号：EP11753370

申请日：2011-03-08

Applicant: EMD CORP

Inventor： EBE AKINORI ,  WATANABE MASANORI

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/3464 ,  H01J37/34 ,  H01J37/3488

公开(公告)号：EP2753154A4

公开(公告)日：2015-02-25

申请号：EP11871785

申请日：2011-08-30

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32651 ,  C23C14/358 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J2237/0266 ,  H05H1/46 ,  H05H2001/4667

公开(公告)号：EP2345750A4

公开(公告)日：2013-11-27

申请号：EP09809534

申请日：2009-08-25

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI ,  HAN JEON GEON

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H05H1/46

CPC classification number: H01J37/3408 ,  C23C14/3407 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3411 ,  H01J37/3417

Abstract: An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

公开(公告)号：EP2216804A4

公开(公告)日：2016-01-20

申请号：EP08848700

申请日：2008-11-12

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI ,  INO EIJI ,  ISHIHARA SHINICHIRO ,  ASHIDA HAJIME ,  WATANABE AKIRA

IPC: H01L21/205 ,  C23C16/509 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23C16/503 ,  C03C17/22 ,  C03C2217/28 ,  C03C2218/153 ,  C23C16/24 ,  C23C16/509 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32715

公开(公告)号：EP2615889A4

公开(公告)日：2015-11-18

申请号：EP11823665

申请日：2011-09-09

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI

IPC: H05H1/46 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H05H1/46 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32477 ,  H05H2001/4667

公开(公告)号：EP2752501A4

公开(公告)日：2015-02-18

申请号：EP11871690

申请日：2011-08-30

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H05H1/46

CPC classification number: H01J37/3411 ,  C23C14/3471 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3408 ,  H01J37/3417

公开(公告)号：EP2615888A4

公开(公告)日：2015-01-21

申请号：EP10856946

申请日：2010-09-06

Applicant: EMD CORP

Inventor： EBE AKINORI ,  WATANABE MASANORI

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4652

公开(公告)号：EP2408276A4

公开(公告)日：2015-10-28

申请号：EP10750875

申请日：2010-03-10

Applicant: EMD CORP

Inventor： SETSUHARA YUICHI ,  EBE AKINORI

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/3211 ,  H01J37/32477 ,  H05H1/46 ,  H05H2001/4667

Abstract: The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device 10 according to the present invention includes a vacuum containem11, a radio-frequency antenna 21 placed between an inner surface 111A and an outer surface 111B of a wall of the vacuum container 11, and a dielectric separating member 16 for separating the radio-frequency antenna 21 from an internal space of the vacuum container 11. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container 11. The separating member 16 has the effects of preventing the radio-frequency antenna 21 from undergoing sputtering by the plasma produced in the vacuum container 11, suppressing an increase in the temperature of the radio-frequency antenna 21, and preventing the formation of particles.

公开(公告)号：EP2408275A4

公开(公告)日：2015-10-28

申请号：EP10750873

申请日：2010-03-10

Applicant: EMD CORP ,  TOKYO ELECTRON LTD

Inventor： SETSUHARA YUICHI ,  NISHIMURA EIICHI ,  EBE AKINORI

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321

公开(公告)号：EP2299789A4

公开(公告)日：2013-11-06

申请号：EP09750378

申请日：2009-05-21

Applicant: EMD CORP ,  ANDO YASUNORI

Inventor： ANDO YASUNORI ,  EBE AKINORI ,  WATANABE MASANORI

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3266