公开(公告)号：EP2719794A3

公开(公告)日：2014-07-09

申请号：EP13174114.2

申请日：2008-01-22

申请人： Element Six Limited

发明人： Lee, Chee-Leong ,  Gu, Erdan ,  Scarsbrook, Geoffrey Alan ,  Friel, Ian ,  Dawson, Martin David

IPC分类号： C23C14/58 ,  C23C14/02 ,  C30B25/02 ,  C30B29/04 ,  H01L21/04 ,  H01L29/16 ,  C23C16/27 ,  C23C16/56 ,  C30B25/10 ,  C30B25/20 ,  G01N27/30 ,  H01L21/02 ,  H01L29/04 ,  H01L29/36 ,  H01L29/167

CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

摘要： The present invention relates to a polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that one or both of the following criteria are fulfilled:
(a) if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm 2 ; and
(b) if a backscattering ion beam analysis is applied thereto, a backscattered ion yield is less than 5% of incident ions.

公开(公告)号：EP2719794A2

公开(公告)日：2014-04-16

申请号：EP13174114.2

申请日：2008-01-22

申请人： Element Six Limited

发明人： Lee, Chee-Leong ,  Gu, Erdan ,  Scarsbrook, Geoffrey Alan ,  Friel, Ian ,  Dawson, Martin David

IPC分类号： C23C14/58 ,  C23C14/02 ,  C30B25/02 ,  C30B29/04 ,  H01L21/04 ,  H01L29/16 ,  C23C16/27 ,  C23C16/56 ,  C30B25/10 ,  C30B25/20 ,  G01N27/30 ,  H01L21/02 ,  H01L29/04 ,  H01L29/36 ,  H01L29/167

CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

摘要： The present invention relates to a polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that one or both of the following criteria are fulfilled:
(a) if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm 2 ; and
(b) if a backscattering ion beam analysis is applied thereto, a backscattered ion yield is less than 5% of incident ions.

摘要翻译： 本发明涉及一种多晶CVD金刚石材料，其包含具有小于5nm的表面粗糙度Rq的表面，其中所述表面是损伤自由程度，满足以下标准中的一个或两个：（a）如果各向异性 对其进行热显示蚀刻，通过各向异性热显示蚀刻显示的数量密度小于100 / mm 2; 和（b）如果对其进行反向散射离子束分析，则后向散射离子产率小于入射离子的5％。