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    REPELLER FOR ION IMPLANTER, CATHODE, CHAMBER WALL, SLIT MEMBER, AND ION GENERATING DEVICE COMPRISING SAME
    1.
    发明公开
    REPELLER FOR ION IMPLANTER, CATHODE, CHAMBER WALL, SLIT MEMBER, AND ION GENERATING DEVICE COMPRISING SAME 审中-公开
    用于离子注入器，阴极，室壁，切口部件以及包括相同部件的离子发生装置的驱动器

    公开(公告)号：EP3316277A1

    公开(公告)日：2018-05-02

    申请号：EP16821544.0

    申请日：2016-06-10

    Applicant: Value Engineering Ltd.

    Inventor： HWANG, Kyou Tae

    IPC: H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/147 ,  H01J37/08 ,  H01J37/09 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/08 ,  H01L21/265 ,  H01L21/26513

    Abstract: Provided are elements for an ion implanter and an ion generating device including the same. The elements include a repeller, a cathode, a chamber wall, and a slit member constituting an arc chamber of an ion generating device for ion implantation used in the fabrication of a semiconductor device. A coating structure including a semicarbide layer is provided to each of the elements in order to stabilize the element against thermal deformation, protect the element from wear, and prevent a deposition product from being peeled off. The coating structure enables precise ion implantation without a change in the position of ion generation or distortion of the equipment. The coating structure allows electrons to be uniformly reflected into the arc chamber to increase the uniformity of plasma, resulting in an improvement in the dissociation efficiency of an ion source gas. The coating structure significantly improves the service life of the element compared to those of existing elements. Also provided are ion generating devices including the elements.

    Abstract translation: 提供了用于离子注入机的元件和包括该元件的离子发生装置。 这些元件包括构成半导体器件制造中使用的用于离子注入的离子产生装置的电弧室的排斥器，阴极，腔室壁和狭缝构件。 包括碳化硅层的涂层结构被提供给每个元件，以便稳定该元件以防止热变形，保护该元件免于磨损，并防止沉积产物被剥离。 该涂层结构能够实现精确的离子注入，而不会改变离子产生的位置或设备的变形。 涂层结构允许电子均匀地反射到电弧室中以增加等离子体的均匀性，导致离子源气体离解效率的提高。 与现有元件相比，涂层结构显着提高了元件的使用寿命。 还提供了包括这些元件的离子发生装置。

    REMOTE DELIVERY OF CHEMICAL REAGENTS
    3.
    发明公开
    REMOTE DELIVERY OF CHEMICAL REAGENTS 审中-公开
    FERNVERTEILUNG CHEMISCHER REAGENZIEN

    公开(公告)号：EP3025366A1

    公开(公告)日：2016-06-01

    申请号：EP14828779.0

    申请日：2014-07-21

    Applicant: Entegris, Inc.

    Inventor： SWEENEY, Joseph D. ,  JONES, Edward E. ,  BYL, Oleg ,  TANG, Ying ,  DESPRES, Joseph R. ,  BISHOP, Steven E.

    IPC: H01L21/02

    CPC classification number: H01J37/32449 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/24564 ,  H01J2237/3365

    Abstract: Fluid storage and dispensing systems and methods for remote delivery of fluids are described, for providing fluid from a source vessel at lower voltage to one or more fluid-utilizing tools at higher voltage, so that the fluid crosses the associated voltage gap without arcing, discharge, premature ionization, or other anomalous behavior, and so that when multiple fluid-utilizing tools are supplied by the remote source vessel, fluid is efficiently supplied to each of the multiple tools at suitable pressure level during the independent operation of others of the multiple vessels.

    Abstract translation: 描述用于远程输送流体的流体存储和分配系统和方法，用于将来自较低电压的源容器的流体提供给在较高电压下的一个或多个流体利用工具，使得流体跨过相关联的电压间隙而没有电弧放电 ，过早电离或其他异常行为，并且当多个流体利用工具由远程源容器供应时，在多个容器中的其他容器的独立操作期间，以适当的压力水平有效地将流体提供给多个工具中的每一个 。

    METHOD OF IMPLANTING BORON USING ISOTOPICALLY ENRICHED BORON PRECURSORS
    6.
    发明公开
    METHOD OF IMPLANTING BORON USING ISOTOPICALLY ENRICHED BORON PRECURSORS 审中-公开
    VERFAHREN ZUR植入物冯宝​​龙麻醉剂同种异体异黄酮BORONHALTIGEN VERBINDUNGEN

    公开(公告)号：EP2937314A1

    公开(公告)日：2015-10-28

    申请号：EP15171765.9

    申请日：2011-08-16

    Applicant: Advanced Technology Materials, Inc.

    Inventor： Kaim, Robert ,  Sweeney, Joseph D. ,  Byl, Oleg ,  Yedave, Sharad N. ,  Jones, Edward E. ,  Zou, Peng ,  Tang, Ying ,  Chambers, Barry Lewis ,  Ray, Richard S.

    IPC: C01B35/06 ,  C01B9/08

    CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

    Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

    Abstract translation: 包含两个或多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼同位素，其浓度或比例大于天然丰度浓度或比例 。 化合物可以具有B 2 F 4的化学式。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及存储和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

    Focused ion beam system and method of making focal adjustment of ion beam
    9.
    发明公开
    Focused ion beam system and method of making focal adjustment of ion beam 有权
    系统功能系统（Ionenstrahl und Verfahren zur Fokussierung des Ionenstrahls）

    公开(公告)号：EP2874176A1

    公开(公告)日：2015-05-20

    申请号：EP14191939.9

    申请日：2014-11-05

    Applicant: JEOL Ltd.

    Inventor： Mihira, Tomohiro

    IPC: H01J37/21 ,  H01J37/28

    CPC classification number: H01J37/304 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3005 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/10 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/2448 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: A focused ion beam system is offered which can make a focal adjustment without relying on the structure of a sample while suppressing damage to the sample to a minimum. Also, a method of making this focal adjustment is offered. The focused ion beam system has an ion source (10) for producing an ion beam (B), a lens system for focusing the beam onto the sample (S), a detector (26) for detecting secondary electrons emanating from the sample, and a controller (42) for controlling the lens system. The controller (42) is operative to provide control such that the sample (S) is irradiated with the ion beam (B) without scanning the beam and that a focus of the ion beam (B) is varied by varying the intensity of the objective lens (20) during the ion beam irradiation. Also, the controller (42) measures the intensity of a signal indicating secondary electrons emanating from the sample (S) while the intensity of the objective lens (20) is being varied. Furthermore, the controller (42) makes a focal adjustment of the ion beam (B) on the basis of the intensity of the objective lens (20) obtained when the measured intensity of the signal indicating secondary electrons is minimal.

    Abstract translation: 提供聚焦离子束系统，可以进行焦点调整，而不依赖于样品的结构，同时将样品的损伤抑制在最小。 此外，提供了进行该焦点调整的方法。 聚焦离子束系统具有用于产生离子束（B）的离子源（10），用于将光束聚焦到样品（S）上的透镜系统，用于检测从样品发出的二次电子的检测器（26），以及 用于控制透镜系统的控制器（42）。 控制器（42）可操作以提供控制，使得样品（S）在不扫描光束的情况下被照射离子束（B），并且通过改变物镜的强度来改变离子束（B）的焦点 透镜（20）。 此外，控制器（42）测量在物镜（20）的强度变化的同时指示从样品（S）发出的二次电子的信号的强度。 此外，控制器（42）基于当指示二次电子的信号的测量强度最小时获得的物镜（20）的强度，对离子束（B）进行焦点调整。

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