GEGENLAGER MIT ASPHÄRISCHEM MEMBRANBETT, DRUCKSENSOR MIT EINEM SOLCHEN GEGENLAGER UND VERFAHREN ZU DEREN HERSTELLUNG
    2.
    发明公开
    GEGENLAGER MIT ASPHÄRISCHEM MEMBRANBETT, DRUCKSENSOR MIT EINEM SOLCHEN GEGENLAGER UND VERFAHREN ZU DEREN HERSTELLUNG 有权
    VERFAHREN ZUR HERSTELLUNG EINES GEGENLAGERS MITASPHÄRISCHEMMEMBRANBETT

    公开(公告)号:EP2566808A2

    公开(公告)日:2013-03-13

    申请号:EP11715908.7

    申请日:2011-04-14

    IPC分类号: B81C1/00

    摘要: A method for the production of a counterbearing with a membrane bed comprises the following steps: providing a counterbearing body comprising silicon and removing the silicon material by means of laser ablation from a surface of the counterbearing body. Preferably, the surface processed by laser ablation is additionally oxidized; and the processed and oxidized surface is etched. The resulting pressure sensor 1 comprises two counterbearings 2a, 2b with a membrane bed 6a, 6b, which has a contour for supporting a measurement membrane 3, wherein the contour substantially corresponds to the bending line of a measurement membrane 3.

    摘要翻译: 一种用于制造具有膜床的平台的方法,包括提供包括硅的平台体; 以及通过激光烧蚀从平台主体的表面移除硅材料。 优选地,随后氧化烧蚀表面,然后蚀刻氧化表面。 在本发明的一个实例中,所得到的压力传感器包括两个平台,每个平台具有用于支撑测量膜的轮廓的膜床,其中轮廓基本上对应于测量膜的弯曲线。

    DIFFERENZDRUCKMESSZELLE
    3.
    发明公开

    公开(公告)号:EP2223070A1

    公开(公告)日:2010-09-01

    申请号:EP08861996.0

    申请日:2008-12-12

    IPC分类号: G01L9/00 G01L19/06

    摘要: A differential pressure measuring cell (1) for detecting the pressure differential between a first pressure and a second pressure comprises: an elastic measuring arrangement having at least one measuring diaphragm (4, 203, 205), which has silicon; at least one carrier body (2, 5, 204), which is connected pressure-tight to the elastic measuring arrangement; a first hydraulic path, in order to transmit a first pressure to a first surface section of the elastic measuring arrangement; a second hydraulic path, in order to transmit a second pressure to a second surface section of the elastic measuring arrangement, wherein said first pressure counteracts said second pressure, and the elastic deflection of the measuring arrangement is a measure of the differential between the first pressure and the second pressure, wherein said differential pressure measuring cell also has at least one hydraulic throttle (9, 10, 211), characterized in that the at least one hydraulic throttle comprises porous silicon.

    DRUCKSENSOR, INSBESONDERE DIFFERENZDRUCKSENSOR, MIT MEMBRANBETT
    4.
    发明公开
    DRUCKSENSOR, INSBESONDERE DIFFERENZDRUCKSENSOR, MIT MEMBRANBETT 有权
    压力传感器,有膜床特别差压传感器

    公开(公告)号:EP2494326A1

    公开(公告)日:2012-09-05

    申请号:EP10762673.1

    申请日:2010-10-07

    IPC分类号: G01L9/00 G01L19/06

    摘要: The pressure sensor according to the invention comprises at least one base, at least one measuring membrane (30), and a transducer, the measuring membrane comprising a semiconductor material and the measuring membrane being fastened to the base, enclosing a pressure chamber. At least one pressure value can be applied to the measuring membrane and the membrane is elastically deformable depending on said pressure value. The transducer provides an electrical signal depending on the deformation of the measuring membrane. The base comprises a membrane bed on which the measuring membrane rests in the event of an overload in order to support the measuring membrane. The membrane bed (21) comprises a glass layer (20) the surface of which faces the measuring membrane and defines a wall of the pressure chamber, the surface of the glass layer having a contour which is suitable for supporting the measuring membrane (30) in the event of an overload. The invention is characterized in that the contour of the membrane bed (21) is obtained by subjecting an unsupported section of a glass pane which forms the glass layer to an increased temperature and allowing it to sag due to the gravity of the unsupported section of the glass pane and by subsequent cooling of the glass pane.

    DIFFERENZDRUCKMESSZELLE
    5.
    发明授权
    DIFFERENZDRUCKMESSZELLE 有权
    压力差测量CELL

    公开(公告)号:EP2223070B1

    公开(公告)日:2012-06-20

    申请号:EP08861996.0

    申请日:2008-12-12

    IPC分类号: G01L9/00 G01L19/06

    摘要: A differential pressure measuring cell (1) for detecting the pressure differential between a first pressure and a second pressure comprises: an elastic measuring arrangement having at least one measuring diaphragm (4, 203, 205), which has silicon; at least one carrier body (2, 5, 204), which is connected pressure-tight to the elastic measuring arrangement; a first hydraulic path, in order to transmit a first pressure to a first surface section of the elastic measuring arrangement; a second hydraulic path, in order to transmit a second pressure to a second surface section of the elastic measuring arrangement, wherein said first pressure counteracts said second pressure, and the elastic deflection of the measuring arrangement is a measure of the differential between the first pressure and the second pressure, wherein said differential pressure measuring cell also has at least one hydraulic throttle (9, 10, 211), characterized in that the at least one hydraulic throttle comprises porous silicon.

    DRUCKSENSOR
    6.
    发明授权

    公开(公告)号:EP2132547B1

    公开(公告)日:2011-06-22

    申请号:EP08717346.4

    申请日:2008-03-04

    IPC分类号: G01L9/06

    CPC分类号: G01L9/0055 G01L9/0042

    摘要: The invention relates to a piezo-resistive pressure sensor in BESOI technology, which is particularly suited for measuring low pressures, has low linearity distortion, is made of a BESOI wafer having a first and a second silicon layer (1, 3) and an oxide layer (5) disposed between the same, has an active layer (7) that is formed by a first silicon layer (1) of the BESOI wafer, piezo-resistive elements (9) being doped in said active layer, and has a membrane carrier (11) formed by the second silicon layer (3) of the BESOI wafer, the carrier surrounding a recess (13) in the second silicon layer (3) on the outside, the recess exposing a region of the active layer (7) forming a membrane (15) and of the associated oxide layer (5), wherein in an outer edge of the region (21) of the oxide layer (5) exposed by the recess (13) a groove (19) surrounding the region (21) is provided.

    DRUCK-MESSEINRICHTUNG
    7.
    发明公开

    公开(公告)号:EP2205955A2

    公开(公告)日:2010-07-14

    申请号:EP08846746.9

    申请日:2008-11-07

    IPC分类号: G01L9/00

    CPC分类号: G01L19/147

    摘要: The invention relates to a pressure measuring device comprising a base (13, 13'), an intermediate piece (15, 15') that is arranged on the base (13, 13') and connected thereto, comprising a semiconductor, and a semiconductor pressure sensor (17) that is arranged on the intermediate piece (15, 15') and connected thereto, comprising a carrier (19) and a measuring membrane (21). Said pressure measuring device can protect the sensitive measuring membrane (21) against mechanical strains in a reliable manner. The inside of the intermediate piece (15;15') comprises an annular-shaped peripheral recess (33 ) that surrounds a first cylindrical section (35) and a second cylindrical section (37) of the intermediate piece (15, 15') that is adjacent to first base-side thereof. The second cylindrical section (37) has a larger outer diameter than the first cylindrical section (35), and the recess is open towards the side of the intermediate piece (15, 15') that is oriented towards the base (13, 13'). The second cylindrical section (37) has a front surface that is oriented towards the base (13, 13'), that rests on an exposed front surface of the base (13, 13'), that forms a connection surface by means of which the intermediate piece (15, 15') can be mechanically connected in a rigid manner to the base (13, 13').

    摘要翻译: 一种具有基座的压力测量装置,布置在基座上的中间片半导体,并与基座连接并布置在中间件上并与中间件连接,具有支撑件和测量膜或隔膜的半导体压力传感器 。 压力测量装置提供对敏感测量膜或隔膜的可靠保护,防止机械扭曲。 提供在中间件的内部延伸的是环形空腔,其环绕第一圆柱形部分及其基座端,中间件的第二圆柱形部分。 第二圆柱形部分具有比第一圆柱形部分更大的外径。 空腔在中间件的端部朝向底座打开。 第二圆柱形部分具有面向基座并且位于基座的端面上的端面,用于形成连接区域,中间件通过该连接区域与基座机械连接。

    DRUCKSENSOR
    8.
    发明公开

    公开(公告)号:EP2132547A1

    公开(公告)日:2009-12-16

    申请号:EP08717346.4

    申请日:2008-03-04

    IPC分类号: G01L9/06

    CPC分类号: G01L9/0055 G01L9/0042

    摘要: The invention relates to a piezo-resistive pressure sensor in BESOI technology, which is particularly suited for measuring low pressures, has low linearity distortion, is made of a BESOI wafer having a first and a second silicon layer (1, 3) and an oxide layer (5) disposed between the same, has an active layer (7) that is formed by a first silicon layer (1) of the BESOI wafer, piezo-resistive elements (9) being doped in said active layer, and has a membrane carrier (11) formed by the second silicon layer (3) of the BESOI wafer, the carrier surrounding a recess (13) in the second silicon layer (3) on the outside, the recess exposing a region of the active layer (7) forming a membrane (15) and of the associated oxide layer (5), wherein in an outer edge of the region (21) of the oxide layer (5) exposed by the recess (13) a groove (19) surrounding the region (21) is provided.

    摘要翻译: 本发明涉及BESOI技术中的压阻式压力传感器,其特别适用于测量低压,具有低线性失真,由具有第一和第二硅层(1,3)和氧化物 (5),其具有由BESOI晶片的第一硅层(1)形成的有源层(7),在所述有源层中掺杂的压阻元件(9),并且具有膜 BESOI晶片的第二硅层(3)形成的载体(11),所述载体在外侧围绕第二硅层(3)中的凹槽(13),凹槽暴露有源层(7)的区域, 形成膜(15)和相关的氧化物层(5),其中在由凹槽(13)暴露的氧化物层(5)的区域(21)的外边缘中包括围绕该区域的沟槽(19) 21)。

    DRUCKMESSZELLE
    10.
    发明授权
    DRUCKMESSZELLE 有权
    测压单元

    公开(公告)号:EP1966577B1

    公开(公告)日:2012-07-25

    申请号:EP06841597.5

    申请日:2006-12-22

    IPC分类号: G01L9/06

    CPC分类号: G01L9/0055

    摘要: A pressure sensor comprises a sensor body 1; a measuring diaphragm 4 which is held by the sensor body, can have a pressure applied to it and can be deformed on the basis of pressure; at least two resistance elements 11, 12 which have an AlxGa1-xN layer 6, wherein at least one first resistance element of the at least two resistance elements is arranged on the measuring diaphragm and has a resistance which depends on deformation. The pressure sensor can be operated using a measurement circuit for detecting a signal which depends on the resistances of the at least two resistance elements on the plane of the AlxGa1-xN layer. Four resistance elements (11, 12) are preferably provided in a full bridge.