摘要:
A method for the production of a counterbearing with a membrane bed comprises the following steps: providing a counterbearing body comprising silicon and removing the silicon material by means of laser ablation from a surface of the counterbearing body. Preferably, the surface processed by laser ablation is additionally oxidized; and the processed and oxidized surface is etched. The resulting pressure sensor 1 comprises two counterbearings 2a, 2b with a membrane bed 6a, 6b, which has a contour for supporting a measurement membrane 3, wherein the contour substantially corresponds to the bending line of a measurement membrane 3.
摘要:
A differential pressure measuring cell (1) for detecting the pressure differential between a first pressure and a second pressure comprises: an elastic measuring arrangement having at least one measuring diaphragm (4, 203, 205), which has silicon; at least one carrier body (2, 5, 204), which is connected pressure-tight to the elastic measuring arrangement; a first hydraulic path, in order to transmit a first pressure to a first surface section of the elastic measuring arrangement; a second hydraulic path, in order to transmit a second pressure to a second surface section of the elastic measuring arrangement, wherein said first pressure counteracts said second pressure, and the elastic deflection of the measuring arrangement is a measure of the differential between the first pressure and the second pressure, wherein said differential pressure measuring cell also has at least one hydraulic throttle (9, 10, 211), characterized in that the at least one hydraulic throttle comprises porous silicon.
摘要:
The pressure sensor according to the invention comprises at least one base, at least one measuring membrane (30), and a transducer, the measuring membrane comprising a semiconductor material and the measuring membrane being fastened to the base, enclosing a pressure chamber. At least one pressure value can be applied to the measuring membrane and the membrane is elastically deformable depending on said pressure value. The transducer provides an electrical signal depending on the deformation of the measuring membrane. The base comprises a membrane bed on which the measuring membrane rests in the event of an overload in order to support the measuring membrane. The membrane bed (21) comprises a glass layer (20) the surface of which faces the measuring membrane and defines a wall of the pressure chamber, the surface of the glass layer having a contour which is suitable for supporting the measuring membrane (30) in the event of an overload. The invention is characterized in that the contour of the membrane bed (21) is obtained by subjecting an unsupported section of a glass pane which forms the glass layer to an increased temperature and allowing it to sag due to the gravity of the unsupported section of the glass pane and by subsequent cooling of the glass pane.
摘要:
A differential pressure measuring cell (1) for detecting the pressure differential between a first pressure and a second pressure comprises: an elastic measuring arrangement having at least one measuring diaphragm (4, 203, 205), which has silicon; at least one carrier body (2, 5, 204), which is connected pressure-tight to the elastic measuring arrangement; a first hydraulic path, in order to transmit a first pressure to a first surface section of the elastic measuring arrangement; a second hydraulic path, in order to transmit a second pressure to a second surface section of the elastic measuring arrangement, wherein said first pressure counteracts said second pressure, and the elastic deflection of the measuring arrangement is a measure of the differential between the first pressure and the second pressure, wherein said differential pressure measuring cell also has at least one hydraulic throttle (9, 10, 211), characterized in that the at least one hydraulic throttle comprises porous silicon.
摘要:
The invention relates to a piezo-resistive pressure sensor in BESOI technology, which is particularly suited for measuring low pressures, has low linearity distortion, is made of a BESOI wafer having a first and a second silicon layer (1, 3) and an oxide layer (5) disposed between the same, has an active layer (7) that is formed by a first silicon layer (1) of the BESOI wafer, piezo-resistive elements (9) being doped in said active layer, and has a membrane carrier (11) formed by the second silicon layer (3) of the BESOI wafer, the carrier surrounding a recess (13) in the second silicon layer (3) on the outside, the recess exposing a region of the active layer (7) forming a membrane (15) and of the associated oxide layer (5), wherein in an outer edge of the region (21) of the oxide layer (5) exposed by the recess (13) a groove (19) surrounding the region (21) is provided.
摘要:
The invention relates to a pressure measuring device comprising a base (13, 13'), an intermediate piece (15, 15') that is arranged on the base (13, 13') and connected thereto, comprising a semiconductor, and a semiconductor pressure sensor (17) that is arranged on the intermediate piece (15, 15') and connected thereto, comprising a carrier (19) and a measuring membrane (21). Said pressure measuring device can protect the sensitive measuring membrane (21) against mechanical strains in a reliable manner. The inside of the intermediate piece (15;15') comprises an annular-shaped peripheral recess (33 ) that surrounds a first cylindrical section (35) and a second cylindrical section (37) of the intermediate piece (15, 15') that is adjacent to first base-side thereof. The second cylindrical section (37) has a larger outer diameter than the first cylindrical section (35), and the recess is open towards the side of the intermediate piece (15, 15') that is oriented towards the base (13, 13'). The second cylindrical section (37) has a front surface that is oriented towards the base (13, 13'), that rests on an exposed front surface of the base (13, 13'), that forms a connection surface by means of which the intermediate piece (15, 15') can be mechanically connected in a rigid manner to the base (13, 13').
摘要:
The invention relates to a piezo-resistive pressure sensor in BESOI technology, which is particularly suited for measuring low pressures, has low linearity distortion, is made of a BESOI wafer having a first and a second silicon layer (1, 3) and an oxide layer (5) disposed between the same, has an active layer (7) that is formed by a first silicon layer (1) of the BESOI wafer, piezo-resistive elements (9) being doped in said active layer, and has a membrane carrier (11) formed by the second silicon layer (3) of the BESOI wafer, the carrier surrounding a recess (13) in the second silicon layer (3) on the outside, the recess exposing a region of the active layer (7) forming a membrane (15) and of the associated oxide layer (5), wherein in an outer edge of the region (21) of the oxide layer (5) exposed by the recess (13) a groove (19) surrounding the region (21) is provided.
摘要:
A pressure sensor comprises a sensor body 1; a measuring diaphragm 4 which is held by the sensor body, can have a pressure applied to it and can be deformed on the basis of pressure; at least two resistance elements 11, 12 which have an AlxGa1-xN layer 6, wherein at least one first resistance element of the at least two resistance elements is arranged on the measuring diaphragm and has a resistance which depends on deformation. The pressure sensor can be operated using a measurement circuit for detecting a signal which depends on the resistances of the at least two resistance elements on the plane of the AlxGa1-xN layer. Four resistance elements (11, 12) are preferably provided in a full bridge.