公开(公告)号：EP2828371A1

公开(公告)日：2015-01-28

申请号：EP13764299.7

申请日：2013-03-14

申请人： Entegris, Inc.

发明人： LIU, Jun ,  HURD, Trace Quentin ,  SUN, Laisheng ,  MEDD, Steven ,  JENQ, Shrane Ning

IPC分类号： C11D3/28 ,  H01L21/304 ,  C11D3/30 ,  C11D3/60

CPC分类号： C11D7/3209 ,  C11D3/0042 ,  C11D3/0073 ,  C11D7/265 ,  C11D7/268 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.

摘要翻译： 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残渣和污染物。 清洁组合物包含至少一种季铵碱，至少一种胺，至少一种唑类腐蚀抑制剂，至少一种还原剂和至少一种溶剂。 该组合物实现了对来自微电子器件表面的CMP后残余物和污染物质的高效有效清洁，同时与阻挡层相容，其中阻挡层基本上不含钽或钛。

公开(公告)号：EP3099839A1

公开(公告)日：2016-12-07

申请号：EP15743809.4

申请日：2015-01-29

申请人： Entegris, Inc. ,  Atmi Taiwan Co., Ltd.

发明人： SUN, Laisheng ,  ZHANG, Peng ,  LIU, Jun ,  MEDD, Steven ,  BARNES, Jeffrey, A. ,  JENQ, Shrane, Ning

IPC分类号： C23G1/14 ,  C11D1/62

CPC分类号： C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.