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1.发明公开
公开(公告)号：EP1017990A2
公开(公告)日：2000-07-12
申请号：EP97922810.3
申请日：1997-02-28
IPC分类号： G01N21/00
CPC分类号： G01N21/41
摘要： In an analytic process using porous silicon, a substance is detected or its concentration in a fluid is determined, based on the change in optical properties of porous silicon as a function of the index of refraction of the substance or of the fluid containing the substance present in the pores of the porous silicon. An analytic device using porous silicon to detect a substance or determe the concentration of a substance in a fluid consists of a component which is at least partly made of porous silicon, the optical property of which is dependent on the index of refraction of the substance or of the fluid containing the substance, where a change in the optical property of porous silicon can be measured to indicate detection of the substance or to determine the concentration in the pores of the porous silicon.
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公开(公告)号：EP0827631B1
公开(公告)日：2002-07-24
申请号：EP96919582.5
申请日：1996-05-20
发明人： BERGER, Michael , THÖNISSEN, Markus , GRÄBER, Jürgen , KRÜGER, Michael , MARSO, Michel , MÜNDER, Herbert , GLÜCK, Olaf , ARENS-FISCHER, Rüdiger , LÜTH, Hans
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , C25F3/14 , G02B6/122 , G02B6/136 , G02B2006/12173 , G02B2006/12176
摘要： The invention relates to a process for producing a structure with porous silicon in which the silicon is rendered porous at the surface of a silicon substrate (1) by means of an etching solution (4). A non-insulating layer (3) is applied to regions of the substrate surface not to be rendered porous and an electric voltage (UM) is applied between it and the substrate during the porosity producing process. The voltage (UM) can preferably be applied at intervals in time and/or at separate points to form regions of differing porosity.
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3.发明授权
公开(公告)号：EP0946890B1
公开(公告)日：2002-05-29
申请号：EP97954706.4
申请日：1997-12-20
发明人： BERGER, Michael , KRÜGER, Michael , THÖNISSEN, Markus , ARENS-FISCHER, Rüdiger , LÜTH, Hans , LANG, Walter , THEISS, Wolfgang , HILBRICH, Stefan
IPC分类号： G02B5/20
CPC分类号： H01L21/30604 , C25F3/12 , G02B5/285
摘要： The invention relates to a layer with an area made of a porous material extending from the surface of the layer to the inside of the latter, wherein the dimension of the porous layer area in the direction perpendicular to the surface of the layer exhibits different values. The invention also relates to a method for producing a layer with a porous area or a layer system, wherein said porous layer area is formed by etching and means are used to choose a physical dimension in correlation with the etching speed of the etching process in order to form at least one etching gradient.
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公开(公告)号：EP0902909B1
公开(公告)日：2002-10-02
申请号：EP97925897.7
申请日：1997-05-30
IPC分类号： G02F1/21 , G02F1/1333
CPC分类号： G02F1/21 , G02F1/1334
摘要： The invention relates to a component with at least one layer or a layer system consisting of porous material, in particular silicon or silicon oxide. At least one section of the pores or all pores of the porous material are filled with a substance, the index of refraction thereof being alterable by an external influence. The index of refraction of the substance can advantageously be changed or adjusted by a voltage or an electric current.
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公开(公告)号：EP1036342A2
公开(公告)日：2000-09-20
申请号：EP98961024.1
申请日：1998-10-20
IPC分类号： G02B5/28
CPC分类号： G02B5/285 , H01L31/02165
摘要： The invention relates to a filtering structure (R1, S1, S2) with a layering sequence comprising a number of layers (B1, B2, B3) formed from porous material. A layering sequence or a number of such layering sequences are formed inside a substrate in addition to the first layering sequence and are arranged in a staggered depthwise manner in relation to the first layering sequence. In this filtering structure, it is useful and advantageous that said additional layering sequence(s) perform(s) a filtering function differing from the first layering sequences.
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6.发明公开
公开(公告)号：EP0946890A2
公开(公告)日：1999-10-06
申请号：EP97954706.0
申请日：1997-12-20
发明人： BERGER, Michael , KRÜGER, Michael , THÖNISSEN, Markus , ARENS-FISCHER, Rüdiger , LÜTH, Hans , LANG, Walter , THEISS, Wolfgang , HILBRICH, Stefan
CPC分类号： H01L21/30604 , C25F3/12 , G02B5/285
摘要： The invention relates to a layer with an area made of a porous material extending from the surface of the layer to the inside of the latter, wherein the dimension of the porous layer area in the direction perpendicular to the surface of the layer exhibits different values. The invention also relates to a method for producing a layer with a porous area or a layer system, wherein said porous layer area is formed by etching and means are used to choose a physical dimension in correlation with the etching speed of the etching process in order to form at least one etching gradient.
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7.发明公开VERFAHREN ZUR STRUKTURIERUNG PORÖSEN SILICIUMS, SOWIE EINE PORÖSES SILICIUM ENTHALTENDE STRUKTUR 失效METHOD FOR结构化的多孔硅和多孔含硅结构
公开(公告)号：EP0827631A1
公开(公告)日：1998-03-11
申请号：EP96919582.0
申请日：1996-05-20
发明人： BERGER, Michael , THÖNISSEN, Markus , GRÄBER, Jürgen , KRÜGER, Michael , MARSO, Michel , MÜNDER, Herbert , GLÜCK, Olaf , ARENS-FISCHER, Rüdiger , LÜTH, Hans
CPC分类号： H01L21/306 , C25F3/14 , G02B6/122 , G02B6/136 , G02B2006/12173 , G02B2006/12176
摘要： The invention relates to a process for producing a structure with porous silicon in which the silicon is rendered porous at the surface of a silicon substrate (1) by means of an etching solution (4). A non-insulating layer (3) is applied to regions of the substrate surface not to be rendered porous and an electric voltage (UM) is applied between it and the substrate during the porosity producing process. The voltage (UM) can preferably be applied at intervals in time and/or at separate points to form regions of differing porosity.
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8.发明公开VERFAHREN ZUR HERSTELLUNG EINER PORÖSEN SCHICHT MIT HILFE EINES ELEKTROCHEMISCHEN ÄTZPROZESSES 审中-公开一种用于生产多孔层采用电化学蚀刻工艺手段
公开(公告)号：EP1042794A1
公开(公告)日：2000-10-11
申请号：EP98966576.5
申请日：1998-12-22
IPC分类号： H01L21/306 , H01L21/321 , H01L33/00 , C25F3/12
CPC分类号： H01L33/346 , C25F3/12 , H01L21/306 , H01L21/321
摘要： In a process for producing a porous layer by an electrochemical etching process, an etching mask which corresponds to the desired course of the deep-etching rate is used. For the course of the deep-etching rate to be continuous, a wedge-shaped etching mask can be selected.
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公开(公告)号：EP0704068B1
公开(公告)日：2000-09-13
申请号：EP94916885.0
申请日：1994-06-08
CPC分类号： H01L33/44 , H01L31/02165 , H01L31/103 , H01L33/346 , H01S5/183 , H01S5/3227
摘要： The invention relates to an optical component consisting of transparent thin layers of differing thickness and refractive indices. Such optical components are used, for example, as interference filters and mirrors. Optical components made of layers with gradually changing refractive indices are also known as waveguides or anti-reflective coatings. The invention achieves the aim of using, instead of layers of ordinary materials, another material by means of a component in which the layers consist of porous silicon. The special advantages of porous silicon as a coating material arise not only from the ease and economy of manufacture but also inthe facility for obtaining gradual refractive index transitions. It is therefore very easily possible to make waveguides on a silicon chip.
摘要翻译： 本发明涉及由不同厚度和折射率的透明薄层组成的光学部件。 这种光学部件例如用作干涉滤光片和反射镜。 由具有逐渐变化的折射率的层制成的光学部件也被称为波导或抗反射涂层。 本发明通过其中层由多孔硅构成的部件来实现使用另一种材料代替普通材料层的目的。 多孔硅作为涂层材料的特殊优点不仅来自于制造的简易性和经济性，而且也是获得逐渐折射率转变的设施。 因此很容易在硅芯片上制作波导。
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公开(公告)号：EP0902909A1
公开(公告)日：1999-03-24
申请号：EP97925897.0
申请日：1997-05-30
IPC分类号： G02F1
CPC分类号： G02F1/21 , G02F1/1334
摘要： The invention relates to a component with at least one layer or a layer system consisting of porous material, in particular silicon or silicon oxide. At least one section of the pores or all pores of the porous material are filled with a substance, the index of refraction thereof being alterable by an external influence. The index of refraction of the substance can advantageously be changed or adjusted by a voltage or an electric current.
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