公开(公告)号：EP3006969A4

公开(公告)日：2016-06-08

申请号：EP14807159

申请日：2014-05-26

Applicant: FUJIFILM CORP

Inventor： YOSHIHIRO TATSUYA ,  SONODA SHINICHIRO

IPC: G02B1/115 ,  B32B7/02 ,  G02B1/118

CPC classification number: G02B1/115 ,  B32B7/02 ,  B32B2307/412 ,  G02B1/118 ,  G02B3/0087

Abstract: Provided is an optical member that is appropriate for manufacturing and is provided with an anti-reflection film with sufficient optical characteristics. An optical member (1) includes a transparent substrate (30) and an anti-reflection film (40) that is formed on a surface of the transparent substrate (30). The anti-reflection film (40) includes a refractive index gradient structure layer (10) of which a refractive index gradually becomes larger at a position closer to the transparent substrate (30) in a thickness direction, and an interference layer (20) which is disposed between the refractive index gradient structure layer (10) and the transparent substrate (30) in order to prevent light from being reflected by an interference effect. A refractive index of the transparent substrate (30) is different from a refractive index of the refractive index gradient structure layer (10) on a side closest to the transparent substrate. A refractive index of the interference layer (20) changes in the thickness direction, and has values which are discrete from both refractive indexes of the refractive index gradient structure layer (10) and the transparent substrate (30) at a boundary between the interference layer and the refractive index gradient structure layer and at a boundary between the interference layer and the transparent substrate, and a value thereof on a side close to the refractive index gradient structure layer is different from a value thereof on a side close to the transparent substrate.

公开(公告)号：EP2940090A4

公开(公告)日：2016-01-06

申请号：EP13869456

申请日：2013-12-25

Applicant: FUJIFILM CORP

Inventor： EZOE TOSHIHIDE ,  SHIMADA KAZUTO ,  SONODA SHINICHIRO

IPC: C09D201/00 ,  B32B7/02 ,  B32B27/00 ,  C08L101/00 ,  C09D7/12 ,  G02B5/20 ,  G02B5/22 ,  G02B5/26 ,  G02B5/28 ,  H01L27/14

CPC classification number: G02B5/208 ,  B32B7/02 ,  B32B27/08 ,  B32B27/20 ,  B32B27/283 ,  B32B2255/10 ,  B32B2264/102 ,  B32B2307/4026 ,  B32B2307/418 ,  B32B2457/00 ,  C08L101/00 ,  C09D5/004 ,  C09D7/63 ,  C09D133/14 ,  C09D151/003 ,  C09D201/00 ,  G02B5/26 ,  G02B5/282 ,  H01L27/14618 ,  H01L27/14621 ,  H01L2224/13

Abstract: Provided are a curable resin composition for forming an infrared reflective film which is capable of forming the infrared reflective film having an infrared light shielding property without vapor deposition, the infrared reflective film obtained using the same, and a manufacturing method thereof, and an infrared ray cutoff filter having a near infrared light shielding property, and an infrared light shielding property. The curable resin composition for forming the infrared reflective film with a refractive index ranging from 1.65 to 2.00 is coatable with a film thickness of 50 nm to 250 nm, and the curable resin composition for forming the infrared reflective film with a refractive index ranging from 1.20 to 1.45 is coatable with a film thickness of 50 nm to 250 nm.

公开(公告)号：EP2819183A4

公开(公告)日：2015-10-07

申请号：EP13751177

申请日：2013-02-08

Applicant: FUJIFILM CORP

Inventor： HAKUTA SHINYA ,  SONODA SHINICHIRO

IPC: H01L33/10 ,  H01L33/30 ,  H01S5/183

CPC classification number: H01L33/46 ,  H01L33/105 ,  H01S5/18383

Abstract: In a surface emission-type semiconductor light-emitting element including a DBR layer, a variation in light intensity due to a temperature change in the formation of a large number of elements manufactured from one wafer is suppressed while maintaining a light intensity enhancement effect. In the semiconductor light-emitting element that outputs emitted light having a predetermined emission peak wavelength », including at least a substrate 10, a lower distributed Bragg reflective layer 12 provided on the substrate 10, and a light-emitting layer 20 provided on a lower distributed Bragg reflective layer 12, the light-emitting layer 20 includes one or more sets of two active layers 22 arranged at a distance of (1+2m) »/4n in an inactive layer 21, » is the emission peak wavelength, n is a refractive index of the light-emitting layer 20, and m is an integer of 0 or greater.

公开(公告)号：EP2687875A4

公开(公告)日：2014-11-05

申请号：EP11861466

申请日：2011-12-15

Applicant: FUJIFILM CORP

Inventor： HAKUTA SHINYA ,  SONODA SHINICHIRO ,  YUUYA SHIGENORI

IPC: G02B1/11 ,  G02B1/115 ,  G02B1/118

CPC classification number: G02B1/11 ,  B29D11/00009 ,  G02B1/118 ,  G02B1/12

公开(公告)号：EP2940081A4

公开(公告)日：2016-01-06

申请号：EP13867254

申请日：2013-12-25

Applicant: FUJIFILM CORP

Inventor： EZOE TOSHIHIDE ,  SHIMADA KAZUTO ,  SONODA SHINICHIRO

IPC: C08L101/12 ,  B32B7/02 ,  C08K5/00 ,  C08L83/04 ,  G02B5/20 ,  G02B5/22

CPC classification number: G02B5/208 ,  B32B7/02 ,  B32B27/08 ,  B32B27/20 ,  B32B27/283 ,  B32B2264/102 ,  B32B2307/4026 ,  B32B2307/418 ,  B32B2457/00 ,  C08K3/22 ,  C08K5/0041 ,  C08K5/16 ,  C08K5/3417 ,  C08K2003/2241 ,  C08L101/12 ,  C09D5/004 ,  C09D183/04 ,  G02B1/04 ,  G02B5/223 ,  G02B5/282 ,  H04N9/045

Abstract: Provided are a curable resin composition capable of forming an infrared ray cutoff filter which has a near infrared light shielding property, and an infrared light shielding property without vapor deposition, the infrared ray cutoff filter obtained therefrom, and a solid-state imaging device using the same. The curable resin composition contains a dye having a maximum absorption wavelength in a range of 600 nm to 820 nm, and capable of forming a high refractive index layer with a refractive index ranging from 1.65 to 2.00, or the curable resin composition contains a dye having a maximum absorption wavelength in a range of 600 nm to 820 nm, and capable of forming a low refractive index layer with a refractive index ranging from 1.20 to 1.45.

公开(公告)号：EP2157832A4

公开(公告)日：2012-08-01

申请号：EP08720455

申请日：2008-03-13

Applicant: FUJIFILM CORP

Inventor： WARASHINA HIDENAGA ,  SHIMOTSU SHINICHI ,  SONODA SHINICHIRO ,  GOTO CHIAKI

IPC: H05B33/04 ,  G02F1/1339 ,  H01L51/52 ,  H05B33/10

CPC classification number: H01L51/5246 ,  G02F1/133305 ,  G02F1/1339 ,  G02F2001/133311 ,  G02F2202/28 ,  H01L51/5243 ,  H01L2251/5338