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    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES
    6.
    发明公开
    STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES 审中-公开
    用于从半导体基材去除光刻胶的剥离组合物

    公开(公告)号：EP3249470A1

    公开(公告)日：2017-11-29

    申请号：EP17172498.2

    申请日：2017-05-23

    申请人： FUJIFILM Electronic Materials U.S.A, Inc.

    发明人： SUGISHIMA, Yasuo ,  MIZUTANI, Atsushi ,  WOJTCZAK, William A.

    IPC分类号： G03F7/42 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D7/10

    CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/43 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31111 ,  H01L21/31133

    摘要： This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

    摘要翻译： 本公开涉及包含1）至少一种水溶性极性非质子有机溶剂的组合物; 2）至少一种季铵氢氧化物; 3）至少一种包含至少三个羟基的化合物; 4）至少一种羧酸; 5）至少一种II族金属阳离子; 6）至少一种选自6-取代-2,4-二氨基-1,3,5-三嗪的铜腐蚀抑制剂; 和7）水。 该组合物可以有效地剥去正或负色调抗蚀剂或抗蚀剂残留物，并且对凸块和下面的金属化材料（例如SnAg，CuNiSn，CuCoCu，CoSn，Ni，Cu，Al，W，Sn，Co和 等等）在半导体衬底上。