Semiconductor integrated circuit device and method of producing the same using master slice approach
    1.
    发明公开
    Semiconductor integrated circuit device and method of producing the same using master slice approach 失效
    Integrierte Halbleiterschaltungsanordnung vom“Masterslice”-Typ und Herstellungsverfahrendafür。

    公开(公告)号:EP0338817A2

    公开(公告)日:1989-10-25

    申请号:EP89303912.3

    申请日:1989-04-20

    申请人: FUJITSU LIMITED

    IPC分类号: H01L27/02 H01L23/52 H01L21/82

    摘要: A semiconductor integrated circuit device includes: a master chip(203) including a basic cell region(201) having a plurality of basic cell arrays(206) arranged thereon, and an input/output cell region(202) having a plurality of input/output cells(207) arranged along the periphery of the basic cell region; a first wiring layer formed on the basic cell region and the input/output cell region via a first insulation layer having contact holes at predetermined positions, the first wiring layer including fixed wirings(LA,508); and a second wiring layer formed on the first wiring layer via a second insulation layer having through holes at predetermined positions, the second wiring layer including programmed wirings(LB,507). Only the wiring pattern of the second wiring layer is suitably changed in accordance with conditions of circuits applied to the input/output cell region and the basic cell region in regions corresponding to the input/output cell region and the basic cell region, thereby greatly reducing a turnaround time of the device.

    摘要翻译: 一种半导体集成电路器件,包括:主芯片(203),包括具有布置在其上的多个基本单元阵列(206)的基本单元区域(201),以及具有多个输入/ 输出单元(207),沿着基本单元区域的周边布置; 经由具有在预定位置具有接触孔的第一绝缘层形成在基本单元区域和输入/输出单元区域上的第一布线层,第一布线层包括固定布线(LA,508); 以及第二布线层,其经由在预定位置具有通孔的第二绝缘层形成在所述第一布线层上,所述第二布线层包括编程布线(LB,507)。 根据与输入/输出单元区域和基本单元区域对应的区域中的输入/输出单元区域和基本单元区域的电路的条件适当地改变第二布线层的布线图案,从而大大降低 设备的周转时间。

    Semiconductor integrated circuit device and method of producing the same using master slice approach
    3.
    发明公开
    Semiconductor integrated circuit device and method of producing the same using master slice approach 失效
    半导体集成电路装置及其使用主狭缝方法生产相同方法

    公开(公告)号:EP0338817A3

    公开(公告)日:1992-05-06

    申请号:EP89303912.3

    申请日:1989-04-20

    申请人: FUJITSU LIMITED

    IPC分类号: H01L27/02 H01L23/52 H01L21/82

    摘要: A semiconductor integrated circuit device includes: a master chip(203) including a basic cell region(201) having a plurality of basic cell arrays(206) arranged thereon, and an input/output cell region(202) having a plurality of input/output cells(207) arranged along the periphery of the basic cell region; a first wiring layer formed on the basic cell region and the input/output cell region via a first insulation layer having contact holes at predetermined positions, the first wiring layer including fixed wirings(LA,508); and a second wiring layer formed on the first wiring layer via a second insulation layer having through holes at predetermined positions, the second wiring layer including programmed wirings(LB,507). Only the wiring pattern of the second wiring layer is suitably changed in accordance with conditions of circuits applied to the input/output cell region and the basic cell region in regions corresponding to the input/output cell region and the basic cell region, thereby greatly reducing a turnaround time of the device.