公开(公告)号：EP1122333B1

公开(公告)日：2006-12-06

申请号：EP01102095.5

申请日：2001-01-31

申请人： Freescale Semiconductor, Inc.

发明人： Junker, Kurt H. ,  Grove, Nicole R. ,  Azrak, Marijean E.

IPC分类号： C23C16/40 ,  C23C16/56 ,  C23C16/54 ,  H01L21/316

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633

公开(公告)号：EP2887394A3

公开(公告)日：2015-07-29

申请号：EP14196161.5

申请日：2014-12-03

申请人： Freescale Semiconductor, Inc.

发明人： Tran, Tu-Anh N. ,  Junker, Kurt H.

IPC分类号： H01L23/485 ,  H01L21/66 ,  H01L23/31

CPC分类号： H01L24/03 ,  H01L22/32 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/03622 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/43 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/85181 ,  H01L2224/85365 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for forming a semiconductor structure includes forming a bond pad (112) over a last metal layer (104, 106, 108) of the semiconductor structure. The bond pad is connected to a portion of the last metal layer, and the bond pad includes a wire bond region. The wire bond region (202, 504, 902, 1102) is recessed such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.

摘要翻译： 一种用于形成半导体结构的方法包括在所述半导体结构的最后金属层（104,106,108）上形成接合焊盘（112）。 接合焊盘连接到最后一个金属层的一部分，并且接合焊盘包括引线接合区域。 引线键合区域（202,504,902,1102）被凹入，使得引线接合区域具有第一厚度，并且接合焊盘在引线接合区域外部的区域具有大于第一厚度的第二厚度。

公开(公告)号：EP2887394A2

公开(公告)日：2015-06-24

申请号：EP14196161.5

申请日：2014-12-03

申请人： Freescale Semiconductor, Inc.

发明人： Tran, Tu-Anh N. ,  Junker, Kurt H.

IPC分类号： H01L23/485 ,  H01L21/66 ,  H01L23/31

CPC分类号： H01L24/03 ,  H01L22/32 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/03622 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/43 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/85181 ,  H01L2224/85365 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for forming a semiconductor structure includes forming a bond pad (112) over a last metal layer (104, 106, 108) of the semiconductor structure. The bond pad is connected to a portion of the last metal layer, and the bond pad includes a wire bond region. The wire bond region (202, 504, 902, 1102) is recessed such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.