公开(公告)号：EP3086362A4

公开(公告)日：2017-05-31

申请号：EP15866377

申请日：2015-06-05

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： ODA DAIZO ,  ETO MOTOKI ,  YAMADA TAKASHI ,  HAIBARA TERUO ,  OISHI RYO ,  UNO TOMOHIRO ,  OYAMADA TETSUYA

IPC分类号： H01L23/49 ,  C22C9/00 ,  C22F1/08 ,  H01L21/60

CPC分类号： H01L24/45 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45109 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/8509 ,  H01L2224/85203 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/20105 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2924/2011 ,  H01L2924/01004 ,  H01L2924/01033

摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 µm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175°C or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

摘要翻译： 提供一种在其表面上具有Pd涂层的Cu接合线，其提高了球接合部在高温高湿环境下的接合可靠性，并且适用于车载装置。 本发明的半导体装置用接合线具备Cu合金芯材和在该Cu合金芯材的表面形成的Pd被覆层，该接合线含有0.011〜1.2质量％的In，并且具有 厚度为0.015至0.150μm。 利用该构造，能够增加球接合部在高温高湿环境下的接合寿命，并由此改善接合可靠性。 Cu合金芯材含有0.05〜1.2质量％的Pt，Pd，Rh和Ni中的一种或两种以上的元素时，能够提高球接合部的可靠性， 175°C或更高的温度环境。 当在Pd涂层的表面上进一步形成Au表层时，楔接合性提高。

公开(公告)号：EP2948575A1

公开(公告)日：2015-12-02

申请号：EP13811489.7

申请日：2013-12-18

申请人： Heraeus Deutschland GmbH & Co. KG

发明人： MILKE, Eugen ,  SCHARF, Jürgen

IPC分类号： C23C26/00 ,  C23C18/08 ,  C23C30/00 ,  C23C14/00 ,  C23C16/00 ,  H01L21/00

CPC分类号： B23K20/007 ,  B23K20/10 ,  B23K35/0261 ,  B23K35/0272 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/322 ,  B23K35/40 ,  B23K35/404 ,  B23K2201/42 ,  C23C14/14 ,  C23C18/08 ,  C23C28/00 ,  C23C30/00 ,  C25D5/34 ,  C25D7/0607 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/43125 ,  H01L2224/432 ,  H01L2224/4321 ,  H01L2224/435 ,  H01L2224/43823 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45663 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45678 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48824 ,  H01L2224/85181 ,  H01L2224/85801 ,  H01L2924/00011 ,  H01L2924/01076 ,  H01L2924/12044 ,  H01L2924/181 ,  H05K1/09 ,  H05K3/34 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T428/12875 ,  Y10T428/12889 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/01046 ,  H01L2924/01006 ,  H01L2924/01001 ,  H01L2924/01008 ,  H01L2924/01007 ,  H01L2924/01204 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20752 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/01033

摘要： The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises a core main component selected from the group consisting of copper and silver; and a coating layer which is at least partially superimposed over the surface of the core, wherein the coating layer comprises a coating component selected from the group palladium, platinum, gold, rhodium, ruthenium, osmium and iridium as a component in an amount of at least 10%; characterized in that the coating layer comprises the main component of the core as a component in an amount of at least 10%.

摘要翻译： 本发明涉及一种接合线，其包含具有表面的芯和至少部分地叠置在芯的表面上的涂层。 核心包含选自铜和银的核心主要成分。 涂层含有至少10％量的选自钯，铂，金，铑，钌，锇和铱的涂层组分，并且还含有至少10％的核心主要组分。

公开(公告)号：EP1903119B1

公开(公告)日：2015-09-23

申请号：EP06745599.8

申请日：2006-04-24

申请人： JX Nippon Mining & Metals Corporation

发明人： SHINDO, Yuichiro Nippon Mining & Metals Co. Ltd. ,  TAKEMOTO, Kouichi Nippon Mining & Metals Co. Ltd.

IPC分类号： C22C9/00 ,  C25C1/12 ,  C25C7/06 ,  H01L21/60 ,  C22B15/14

CPC分类号： C22B15/0084 ,  C22B15/0073 ,  C22B15/0089 ,  C22C9/00 ,  C25C1/12 ,  C25C7/06 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01105 ,  H01L2924/01208 ,  H01L2924/10253 ,  H01L2924/14 ,  Y02P10/236 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01205 ,  H01L2924/01046 ,  H01L2924/00014 ,  H01L2224/45647 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01033 ,  H01L2924/01001 ,  H01L2924/01006 ,  H01L2924/01007

公开(公告)号：EP2903023A1

公开(公告)日：2015-08-05

申请号：EP15152976.5

申请日：2015-01-29

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Motowaki, Shigehisa ,  Houzouji, Hiroshi ,  Morita, Toshiaki ,  Konno, Akitoyo

IPC分类号： H01L23/49 ,  H01L23/373 ,  H01L25/07

CPC分类号： H01L25/18 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45032 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/2076 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

摘要： To provide a power semiconductor module that can efficiently cool a high-heat-generating portion of a transistor device and has excellent connection reliability of a wiring bonding portion. A power semiconductor module includes: a heat sink (1); a circuit board connected to the heat sink (1) via a bondingmaterial and formed with a wiring on a front surface of an insulating substrate (2); a transistor device (5) including a main electrode (6) and a control electrode (7) formed on one surface and a back surface electrode formed on the other surface, the back surface electrode being connected to the circuit board via a bonding material; a first conductive member (10) bonded to the main electrode (6) via a bonding material; and wire or ribbon-shaped connection terminals (11) and (12) that electrically connect the first conductive member (10) and the control electrode (7) with another device or the circuit board, wherein the control electrode (7) is disposed at a corner portion of the main electrode (6), and the first conductive member (10) has a shape in which the first conductive member is cut out at a portion above the control electrode (7).

摘要翻译： 提供能够有效地冷却晶体管器件的高发热部分并且具有优异的布线接合部分的连接可靠性的功率半导体模块。 功率半导体模块包括：散热器（1）; 电路板，经由接合材料连接到散热器（1），并在绝缘基板（2）的前表面上形成有布线; 包括形成在一个表面上的主电极（6）和控制电极（7）和形成在另一个表面上的背面电极的晶体管器件（5），所述背面电极通过接合材料连接到所述电路板; 经由接合材料接合到主电极（6）的第一导电构件（10）; 以及将第一导电构件（10）和控制电极（7）与另一装置或电路基板电连接的线状或带状连接端子（11）和（12），其中控制电极（7） 主电极（6）的角部，第一导电部件（10）具有在控制电极（7）的上方切断第一导电部件的形状。

公开(公告)号：EP2887394A3

公开(公告)日：2015-07-29

申请号：EP14196161.5

申请日：2014-12-03

申请人： Freescale Semiconductor, Inc.

发明人： Tran, Tu-Anh N. ,  Junker, Kurt H.

IPC分类号： H01L23/485 ,  H01L21/66 ,  H01L23/31

CPC分类号： H01L24/03 ,  H01L22/32 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/03622 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/43 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48458 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/85181 ,  H01L2224/85365 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for forming a semiconductor structure includes forming a bond pad (112) over a last metal layer (104, 106, 108) of the semiconductor structure. The bond pad is connected to a portion of the last metal layer, and the bond pad includes a wire bond region. The wire bond region (202, 504, 902, 1102) is recessed such that the wire bond region has a first thickness and a region of the bond pad outside the wire bond region has a second thickness that is greater than the first thickness.

摘要翻译： 一种用于形成半导体结构的方法包括在所述半导体结构的最后金属层（104,106,108）上形成接合焊盘（112）。 接合焊盘连接到最后一个金属层的一部分，并且接合焊盘包括引线接合区域。 引线键合区域（202,504,902,1102）被凹入，使得引线接合区域具有第一厚度，并且接合焊盘在引线接合区域外部的区域具有大于第一厚度的第二厚度。

公开(公告)号：EP2447380B1

公开(公告)日：2015-02-25

申请号：EP10792132.2

申请日：2010-06-23

申请人： Nippon Steel & Sumikin Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： UNO, Tomohiro ,  TERASHIMA, Shinichi ,  YAMADA, Takashi ,  ODA, Daizo

IPC分类号： B23K35/30 ,  B23K35/02 ,  C22C9/00 ,  C22F1/08 ,  B21C1/00 ,  B21C37/04 ,  H01L23/00

CPC分类号： B23K35/302 ,  B21C1/003 ,  B21C37/047 ,  B23K35/0261 ,  C22C9/00 ,  C22F1/08 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/435 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/4851 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/85181 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20755 ,  Y10T428/2958 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00013 ,  H01L2924/01012

公开(公告)号：EP2822029A1

公开(公告)日：2015-01-07

申请号：EP13754800.4

申请日：2013-02-22

申请人： Nippon Micrometal Corporation ,  WASEDA UNIVERSITY

发明人： TATSUMI, Kohei ,  YAMADA, Takashi ,  ODA, Daizo

IPC分类号： H01L21/60 ,  H01L21/607

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/48872 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/20103 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01202 ,  H01L2924/20107 ,  H01L2924/20106 ,  H01L2224/29099 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01049

摘要： A power semiconductor device, operable regardless of thermal stress generation, which reduces heat generation from a wire, and secures the reliability of a bonding portion when the device is used for dealing with a large amount of current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. The power semiconductor device comprises a metal electrode on a power semiconductor die and another metal electrode connected by a metal wire using a wedge bonding connection, wherein the metal wire is Ag or a Ag alloy wire having a diameter greater than 50µm and not greater than 2mm, and the metal electrode has thereon one or more metals and/or alloy layers, each of the layers being 50Å or more in thickness, wherein the metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

摘要翻译： 一种功率半导体器件，其可以在不受热应力产生的情况下操作，这降低了线的发热，并且当该器件用于处理大量电流和/或在高温气氛下时，确保了接合部的可靠性， 制造该装置的方法和接合线。 功率半导体器件包括功率半导体管芯上的金属电极和使用楔形接合连接的金属线连接的另一金属电极，其中金属线为Ag或直径大于50μm且不大于2mm的Ag合金线 金属电极上具有一个或多个金属和/或合金层，每个层的厚度均为50埃以上，其中该层的金属选自Ni，Cr，Cu，Pd，V，Ti，Pt ，Zn，Ag，Au，W和Al。

公开(公告)号：EP2444999A4

公开(公告)日：2012-11-14

申请号：EP10789561

申请日：2010-06-17

申请人： ROHM CO LTD

发明人： HAGA MOTOHARU ,  YOSHIDA SHINGO ,  KASUYA YASUMASA ,  NAGAHARA TOICHI ,  KIMURA AKIHIRO ,  FUJII KENJI

IPC分类号： H01L23/31 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/29 ,  H01L23/485 ,  H01L23/49 ,  H01L23/495

CPC分类号： H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

摘要： A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

摘要翻译： 根据本发明的半导体器件包括半导体芯片，由包含铝的金属材料制成并形成在半导体芯片的顶表面上的电极焊盘，设置在半导体芯片的外围的电极引线，具有 线性延伸的主体部分，并且具有焊盘接合部分和引线接合部分，所述引线接合部分形成在所述主体部分的各个端部处并且分别接合到所述电极焊盘和所述电极引线;以及树脂封装，密封所述半导体芯片，所述电极 引线和接合线，接合线由铜制成，并且整个电极焊盘和整个焊盘接合部分由不透水膜一体地覆盖。

公开(公告)号：EP2461358A1

公开(公告)日：2012-06-06

申请号：EP10804273.0

申请日：2010-07-16

申请人： Nippon Steel Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： TERASHIMA, Shinichi ,  UNO, Tomohiro ,  YAMADA, Takashi ,  ODA, Daizo

IPC分类号： H01L21/60 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06

CPC分类号： C22C5/04 ,  C22C5/02 ,  C22C5/06 ,  C22C9/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85564 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01034 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0102 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/01001 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01007 ,  H01L2224/45669 ,  H01L2924/2076 ,  H01L2924/01018 ,  H01L2224/48465 ,  H01L2924/20654 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01004 ,  H01L2924/01033

摘要： There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

摘要翻译： 提供了一种用于半导体的接合线，即使当结合到具有优异的氧化电阻率并且具有铜或铜合金的芯线的镀钯引线框时，也能够确保良好的楔形粘结性。 该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。 上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。

公开(公告)号：EP2362417A3

公开(公告)日：2012-05-23

申请号：EP11004204.1

申请日：2009-09-02

申请人： Linear Technology Corporation

发明人： Pruitt, David, A.

IPC分类号： H01L23/64 ,  H01L23/495 ,  H01F19/08

CPC分类号： H01F19/08 ,  H01F38/14 ,  H01F2019/085 ,  H01F2027/2814 ,  H01L23/48 ,  H01L23/4952 ,  H01L23/642 ,  H01L23/645 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48491 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/49052 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49176 ,  H01L2224/4943 ,  H01L2224/85455 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/48824

摘要： A semiconductor device (200) configured to provide current and voltage isolation inside an integrated circuit package, the semiconductor device comprising:
a lead frame (210) including a first set of leads (220,222,224,226) and a second set of leads (230,232,234,236), the first set of leads being isolated from the second set of leads;
a semiconductor die (240) positioned on the lead frame (210);
an isolating block (250) positioned on the semiconductor die;
a first interconnect coil (202) formed by a first set of wires (260,262,264,266), the semiconductor die, and the first set of leads; and
a second interconnect coil (204) isolated from the first interconnect coil and formed by a second set of wires (280,282,284,286), the isolating block, and the second set of leads.