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    Gas barrier coating and gas barrier film
    3.
    发明授权
    Gas barrier coating and gas barrier film 有权

    公开(公告)号：EP2309022B1

    公开(公告)日：2018-10-31

    申请号：EP10176369.6

    申请日：2010-09-13

    申请人： Fujifilm Corporation

    发明人： Takahashi, Toshiya ,  Senga, Takeshi ,  Tonohara, Kouji

    IPC分类号： C23C16/34 ,  C23C16/52

    CPC分类号： C23C16/345 ,  C23C16/52

    摘要： A gas barrier coating is based on silicon nitride, and has a N/Si compositional ratio of 1 to 1.4 and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si-H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm -1 in a Fourier transform infrared absorption spectrum of the coating, with a ratio [I (Si-H) /I (Si-N) ] between a peak intensity I (Si-H) of the absorption caused by Si-H stretching vibration and a peak intensity I (Si-N) of an absorption caused by Si-N stretching vibration in the vicinity of 840 cm -1 being 0.03 to 0.15. A gas barrier film includes the gas barrier coating deposited on a resin film with a glass transition temperature of 130°C or lower.

    Gas barrier coating and gas barrier film
    4.
    发明公开
    Gas barrier coating and gas barrier film 审中-公开
    Gassperrbeschichtung und Gassperrschicht

    公开(公告)号：EP2309022A1

    公开(公告)日：2011-04-13

    申请号：EP10176369.6

    申请日：2010-09-13

    申请人： Fujifilm Corporation

    发明人： Takahashi, Toshiya ,  Senga, Takeshi ,  Tonohara, Kouji

    IPC分类号： C23C16/34 ,  C23C16/52

    CPC分类号： C23C16/345 ,  C23C16/52

    摘要： A gas barrier coating is based on silicon nitride, and has a N/Si compositional ratio of 1 to 1.4 and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si-H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm -1 in a Fourier transform infrared absorption spectrum of the coating, with a ratio [I (Si-H) /I (Si-N) ] between a peak intensity I (Si-H) of the absorption caused by Si-H stretching vibration and a peak intensity I (Si-N) of an absorption caused by Si-N stretching vibration in the vicinity of 840 cm -1 being 0.03 to 0.15. A gas barrier film includes the gas barrier coating deposited on a resin film with a glass transition temperature of 130°C or lower.

    摘要翻译： 阻气涂层是以氮化硅为基础，N / Si组成比为1〜1.4，氢含量为10〜30原子％。 在涂层的傅里叶变换红外吸收光谱中，由Si-H伸缩振动引起的吸收峰发生在2170〜2200cm -1范围内的波数，[I（Si-H）/ I（Si- （Si-H）和由Si-H伸缩振动引起的吸收的峰值强度I（Si-H）与由840nm附近的Si-N伸缩振动引起的吸收峰值强度I（Si-N） 1为0.03〜0.15。 阻气膜包括沉积在玻璃化转变温度为130℃以下的树脂膜上的阻气涂层。

    Film deposition device
    6.
    发明公开
    Film deposition device 有权
    Filmablagerungsvorrichtung

    公开(公告)号：EP2423353A1

    公开(公告)日：2012-02-29

    申请号：EP11179525.8

    申请日：2011-08-31

    申请人： Fujifilm Corporation

    发明人： Mochizuki, Yoshihiko ,  Tonohara, Kouji

    IPC分类号： C23C16/509 ,  C23C16/54

    CPC分类号： C23C16/509 ,  C23C16/345 ,  C23C16/545

    摘要： A film deposition device (10) includes a conveyor of a strip (Z) of substrate in a conveying direction, a film deposition electrode (46) disposed so as to face the substrate, a counter electrode (42) disposed at an opposite side of the film deposition electrode, gas supplier of film deposition gases and a grounded shield (48) disposed in a planar direction of the substrate so as to surround the film deposition electrode. An upstream end portion of the film deposition electrode in the conveying direction is closer to the substrate than an upstream end portion of the grounded shield in the conveying direction corresponding to the upstream end portion of the film deposition electrode.

    摘要翻译： 膜沉积装置（10）包括沿输送方向的基板条（Z）的输送机，与基板相对设置的成膜电极（46），设置在相对侧的相对电极 膜沉积电极，膜沉积气体的气体供给器和设置在基板的平面方向上以围绕成膜电极的接地屏蔽（48）。 成膜电极的输送方向的上游端部比与成膜电极的上游侧端部对应的输送方向的接地屏蔽的上游端部更靠近基板。

    Film deposition method
    7.
    发明公开
    Film deposition method 有权
    Filmabscheidungsverfahren

    公开(公告)号：EP2298956A1

    公开(公告)日：2011-03-23

    申请号：EP10174110.6

    申请日：2010-08-26

    申请人： Fujifilm Corporation

    发明人： Fujinami, Tatsuya ,  Takahashi, Shinsuke ,  Fujinawa, Jun ,  Tonohara, Kouji

    IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/517 ,  C23C16/54 ,  C23C16/545

    摘要： A film deposition method deposits a film on a surface of a substrate in strip form traveling on a peripheral surface of a cylindrical drum in at least one film deposition compartment around the peripheral surface of the drum. The method disposes previously a differential compartment between one film deposition compartment and a compartment including a wrapping space containing at least one of a first position at which the substrate starts to travel on the drum and a second position at which the substrate separates from the drum, the differential compartments communicating with the compartment including the wrapping space and the film deposition compartment, sets a first pressure of the wrapping space lower than a second pressure of the at least one film deposition compartment and performs film deposition in the film deposition compartment with electric power supplied to the drum.

    摘要翻译： 薄膜沉积方法将薄膜沉积在基板的表面上，以带状形式在圆筒形滚筒的圆周表面上行进，在至少一个薄膜沉积室中围绕滚筒周边表面。 该方法事先将一个膜沉积隔室和隔室之间的差动隔间置于包括一个包裹空间的隔间，该包装空间包含基板开始在滚筒上行进的第一位置和基板与滚筒分离的第二位置中的至少一个， 与包括所述包裹空间和所述成膜室的所述隔室连通的所述差动隔间将所述包装空间的第一压力设定为低于所述至少一个成膜室的第二压力，并且在所述成膜室中进行电沉积 提供给鼓。

    Film deposition device
    8.
    发明公开
    Film deposition device 有权
    Filmablagerungsvorrichtung

    公开(公告)号：EP2290127A1

    公开(公告)日：2011-03-02

    申请号：EP10171062.2

    申请日：2010-07-28

    申请人： Fujifilm Corporation

    发明人： Fujinami, Tatsuya ,  Takahashi, Shinsuke ,  Tonohara, Kouji ,  Fujinawa, Jun

    IPC分类号： C23C16/54 ,  C23C16/455

    CPC分类号： C23C16/545 ,  C23C16/45519

    摘要： The film deposition device includes a CVD film forming room disposed on a travel path of a substrate and having a function of performing the film deposition on a substrate by CVD, a treatment room disposed upstream or downstream of the CVD film forming room on the travel path and having a function of performing a predetermined treatment on the substrate, and a differential room disposed between and communicating with the CVD film forming room and the treatment room. The differential room includes a evacuation unit, a gas introducing unit for introducing at least one of a gas to be supplied to both of the CVD film forming room and the treatment room, and an inert gas, and a controller which controls the evacuation unit and the gas introducing unit to keep the differential room at a higher pressure than the CVD film forming room and the treatment room.

    摘要翻译： 膜沉积装置包括设置在基板的行进路径上并具有通过CVD在基板上进行膜沉积的功能的CVD成膜室，设置在CVD膜形成室的上游或下游的处理室 并且具有对基板进行预定处理的功能，以及设置在CVD成膜室和处理室之间并与其连通的差动室。 差速室包括排气单元，用于引入要供应到CVD成膜室和处理室的气体中的至少一种的气体引入单元和惰性气体，以及控制排气单元和 所述气体导入单元将所述差动室保持在比所述CVD成膜室和所述处理室更高的压力。