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    POLISHING COMPOSITION AND POLISHING COMPOSITION SET
    2.
    发明公开
    POLISHING COMPOSITION AND POLISHING COMPOSITION SET 审中-公开

    公开(公告)号：EP3508550A1

    公开(公告)日：2019-07-10

    申请号：EP17846509.2

    申请日：2017-08-29

    申请人： Fujimi Incorporated ,  Toagosei Co., Ltd.

    发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ICHITSUBO, Taiki ,  ASADA, Maki

    IPC分类号： C09K3/14 ,  B24B37/00 ,  H01L21/304

    摘要： Provided is a polishing composition effective for reducing surface defects. The polishing composition provided by the present invention includes an abrasive, a water-soluble polymer, and a basic compound. The water-soluble polymer includes a polymer A that satisfies both of the following conditions.
    (1) The polymer A includes a vinyl alcohol unit and a non-vinyl alcohol unit in one molecule.
    (2) An adsorption parameter calculated by [(C1 - C2)/C1] × 100 is 5 or more. Here, C1 is the total amount of organic carbon contained in a test liquid L1 including 0.017% by weight of the polymer A and 0.009% by weight of ammonia. The C2 is the total amount of organic carbon contained in a supernatant liquid obtained by centrifugally separating a test liquid L2 including 0.46% by weight of colloidal silica having a BET diameter of 35 nm, 0.017% by weight of the polymer A, and 0.009% by weight of ammonia, and precipitating the silica particles.

    COMPOSITION FOR POLISHING SILICON WAFERS
    3.
    发明公开
    COMPOSITION FOR POLISHING SILICON WAFERS 审中-公开
    抛光硅晶片的组成

    公开(公告)号：EP3133639A1

    公开(公告)日：2017-02-22

    申请号：EP15780524.3

    申请日：2015-04-07

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  MORI, Yoshio

    IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14 ,  H01L21/321

    CPC分类号： C09K3/14 ,  C09G1/02 ,  H01L21/02024 ,  H01L21/02052

    摘要： Provided is a silicon wafer polishing composition having an excellent effect of reducing the haze on the surface of silicon wafers and excellent filterability. The composition for polishing silicon wafers provided here includes a silicon-wafer polishing accelerator, an amido group-containing polymer X, an organic compound Y having no amido group, and water. The amido group-containing polymer X has, on the main chain, a building block A derived from a monomer represented by General Formula (1). The relation between the molecular weight M x of the amido group-containing polymer X and the molecular weight M y of the organic compound Y satisfies the expression: 200 ≤ M y x .

    摘要翻译： 本发明提供一种硅晶片研磨用组合物，该硅晶片研磨用组合物具有降低硅晶片表面的雾度，过滤性优异的优异的效果。 这里提供的用于抛光硅晶片的组合物包括硅晶片抛光促进剂，含酰胺基的聚合物X，不含酰胺基的有机化合物Y和水。 含酰胺基聚合物X在主链上具有来自通式（1）所示单体的结构单元A. 含酰胺基聚合物X的分子量Mx与有机化合物Y的分子量My的关系满足式200≤My

    COMPOSITION FOR SILICON WAFER POLISHING
    6.
    发明公开
    COMPOSITION FOR SILICON WAFER POLISHING 审中-公开
    POLIERZUSAMMENSETZUNGFÜRSILICIUMWAFER

    公开(公告)号：EP3007213A1

    公开(公告)日：2016-04-13

    申请号：EP14807048.5

    申请日：2014-05-02

    申请人： Fujimi Incorporated

    发明人： TSUCHIYA, Kohsuke ,  TANSHO, Hisanori ,  ICHITSUBO, Taiki ,  MORI, Yoshio

    IPC分类号： H01L21/304 ,  B24B37/00 ,  C09K3/14

    摘要： This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

    摘要翻译： 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂，含酰胺基的聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接键合。