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公开(公告)号：EP3708630A1
公开(公告)日：2020-09-16
申请号：EP18871893.6
申请日：2018-10-19
发明人： TSUCHIYA, Kohsuke , TANSHO, Hisanori , SUGA, Yusuke , ICHITSUBO, Taiki , TAKEMOTO, Takayuki , SAITO, Naohiko , KAAI, Michihiro
IPC分类号： C09K3/14 , B24B37/00 , C09G1/02 , H01L21/304
摘要： Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.
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公开(公告)号：EP3508550A1
公开(公告)日：2019-07-10
申请号：EP17846509.2
申请日：2017-08-29
IPC分类号： C09K3/14 , B24B37/00 , H01L21/304
摘要： Provided is a polishing composition effective for reducing surface defects. The polishing composition provided by the present invention includes an abrasive, a water-soluble polymer, and a basic compound. The water-soluble polymer includes a polymer A that satisfies both of the following conditions.
(1) The polymer A includes a vinyl alcohol unit and a non-vinyl alcohol unit in one molecule.
(2) An adsorption parameter calculated by [(C1 - C2)/C1] × 100 is 5 or more. Here, C1 is the total amount of organic carbon contained in a test liquid L1 including 0.017% by weight of the polymer A and 0.009% by weight of ammonia. The C2 is the total amount of organic carbon contained in a supernatant liquid obtained by centrifugally separating a test liquid L2 including 0.46% by weight of colloidal silica having a BET diameter of 35 nm, 0.017% by weight of the polymer A, and 0.009% by weight of ammonia, and precipitating the silica particles.-
公开(公告)号：EP3605588A1
公开(公告)日：2020-02-05
申请号：EP18775838.8
申请日：2018-03-14
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： Provided is a polishing composition by which the amount of edge roll off can be effectively reduced. The polishing composition provided by the present invention contains an abrasive, a basic compound, a nitrogen-containing water-soluble polymer and water. The nitrogen-containing water-soluble polymer does not have a N-H bond in the molecule.
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4.发明公开
公开(公告)号：EP3967736A1
公开(公告)日：2022-03-16
申请号：EP21205576.8
申请日：2014-03-14
申请人： Fujimi Incorporated
摘要： Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.
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公开(公告)号：EP3261114A1
公开(公告)日：2017-12-27
申请号：EP16752069.1
申请日：2016-01-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , MOMOTA, Satoshi
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09G1/02 , B24B37/00 , B24B37/044 , C09K3/1463 , H01L21/02024 , H01L21/304
摘要： To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A = (D90 - D50) / (D50 - D10) and the polishing composition is used for final polishing in silicon wafer polishing.
摘要翻译： 在减少LPD的同时进行抛光，并在硅晶片的最终抛光中防止金属特别是镍和铜的污染。 抛光组合物含有研磨剂，水溶性聚合物，碱性化合物，螯合剂和水，其中当限定等于从小粒径侧开始累积体积为10％时的粒径的粒径时 作为D10，将从小粒径侧起累积体积为50％时的粒径相当的粒径定义为D50，相当于从小粒径起累积体积为90％时的粒径 （D90-D50）/（D50-D50）/（D50-D50）/（D50-D50）的关系， - D10），并将该抛光组合物用于硅晶片抛光中的最终抛光。
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公开(公告)号：EP3258483A1
公开(公告)日：2017-12-20
申请号：EP16748863.4
申请日：2016-01-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1454 , C09K3/1463 , H01L21/02024 , H01L21/02052 , H01L21/30625
摘要： There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×10 10 particles/mL or more and 1.0×10 13 particles/mL or less.
摘要翻译： 提供了一种能够进一步减少硅晶片表面缺陷的抛光方法。 一种硅晶片的研磨方法，其包括研磨工序和研磨工序后进行的表面处理工序，其中，表面处理工序中使用的表面处理用组合物中的研磨剂的个数为1.0×1010个/ mL以上 1.0×10 13个/ mL以下。
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公开(公告)号：EP4410887A1
公开(公告)日：2024-08-07
申请号：EP22875832.2
申请日：2022-09-14
申请人： Fujimi Incorporated
IPC分类号： C08L29/14 , C09K3/14 , H01L21/304
CPC分类号： C09K3/14 , H01L21/304 , C08L29/14
摘要： Provided is a method for producing a polishing composition of which filterability is good and which can reduce surface defects of an object to be polished.
A method for producing a polishing composition containing a modified polyvinyl alcohol composition containing a modified polyvinyl alcohol or a derivative thereof and water includes a heat retention step of retaining the modified polyvinyl alcohol composition at a solution temperature of 30°C or higher and lower than 60°C, in which the heat retention step is performed such that a parameter A is 2.0 or more.-
公开(公告)号：EP4120322A1
公开(公告)日：2023-01-18
申请号：EP21767897.8
申请日：2021-03-04
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke
IPC分类号： H01L21/304
摘要： Provided is a polishing composition that can achieve haze reduction and wettability enhancement of a polished surface of a silicon wafer. This polishing composition contains silica particles, a cellulose derivative, a basic compound, and water. Here, the silica particles have an average primary particle diameter of 30 nm or less and an average secondary particle diameter of 60 nm or less. The cellulose derivative has a weight average molecular weight of more than 120 × 10 4 .
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公开(公告)号：EP3950875A1
公开(公告)日：2022-02-09
申请号：EP20776335.0
申请日：2020-03-25
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , ASADA, Maki , ICHITSUBO, Taiki
IPC分类号： C09K3/14 , B24B37/00 , H01L21/304
摘要： Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.
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公开(公告)号：EP3053978B1
公开(公告)日：2019-11-06
申请号：EP14848277.1
申请日：2014-09-22
申请人： Fujimi Incorporated
发明人： TSUCHIYA, Kohsuke , MORI, Yoshio
IPC分类号： C09K3/14 , B24B37/00 , H01L21/304 , C09G1/04
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