公开(公告)号：EP1850478A2

公开(公告)日：2007-10-31

申请号：EP07106869.6

申请日：2007-04-24

申请人： Fujitsu Media Devices Limited ,  Fujitsu Ltd.

发明人： Iwaki, Masafumi ,  Tsutsumi, Jun ,  Nishihara, Tokihiro ,  Yokoyama, Tsuyoshi ,  Sakashita, Takeshi ,  Taniguchi, Shinji ,  Ueda, Masanori ,  Endo, Go

IPC分类号： H03H9/17

CPC分类号： H03H9/174 ,  H03H3/04 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/132 ,  H03H9/605

摘要： A piezoelectric thin-film resonator includes a substrate (10), a lower electrode (12) provided on the substrate (10), a piezoelectric film (14) provided on the lower electrode (12), and an upper electrode (16) provided on the piezoelectric film (14) so as to have a portion that overlaps the lower electrode (12) across the piezoelectric film (14). At least a part of an outer end of the piezoelectric film (14) is further in than an outer end of an opposing region in which the upper and lower electrodes overlap each other across the piezoelectric film (14).

摘要翻译： 压电薄膜谐振器包括基板（10），设置在基板（10）上的下电极（12），设置在下电极（12）上的压电薄膜（14）和设置在下电极 在所述压电膜（14）上具有与所述下电极（12）重叠的部分，跨越所述压电膜（14）。 压电薄膜（14）的外端部的至少一部分比在压电薄膜（14）的上下电极重叠的相对区域的外端进一步。

公开(公告)号：EP1850479A3

公开(公告)日：2008-07-30

申请号：EP07106274.9

申请日：2007-04-16

申请人： Fujitsu Media Devices Limited ,  Fujitsu Ltd.

发明人： Nishihara, Tokihiro ,  Taniguchi, Shinji ,  Iwaki, Masafumi ,  Yokoyama, Tsuyoshi ,  Sakashita, Takeshi ,  Ueda, Masanori ,  Saitou, Yasuyuki

IPC分类号： H03H9/56 ,  H03H9/70 ,  H03H9/02

CPC分类号： H03H9/564 ,  H03H9/568

摘要： A filter includes piezoelectric thin-film resonators (P1 to P4, S1 to S4) having a substrate (10), a lower electrode (12) supported by the substrate (10), a piezoelectric film (14) provided on the lower electrode, and an upper electrode (16) provided on the piezoelectric film (14). At least one of the piezoelectric thin-film resonators has a portion (22) in which the upper electrode (16) overlaps the lower electrode (12) across the piezoelectric film. The above portion has a shape different from shapes of corresponding portions of other piezoelectric thin-film resonators, so that a spurious component in the above at least one of the piezoelectric thin-film resonators occur at a frequency different from frequencies of spurious components that occur in the other piezoelectric thin-film resonators.

公开(公告)号：EP1863173A3

公开(公告)日：2009-07-15

申请号：EP07109239.9

申请日：2007-05-30

申请人： Fujitsu Ltd.

发明人： Taniguchi, Shinji ,  Yokoyama, Tsuyoshi ,  Hara, Motoaki ,  Sakashita, Takeshi ,  Tsutsumi, Jun ,  Iwaki, Masafumi ,  Nishihara, Tokihiro ,  Ueda, Masanori ,  Ehara, Hisanori

IPC分类号： H03H3/02 ,  H03H9/58 ,  H03H9/02

CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02141 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021

摘要： A filter includes multiple piezoelectric thin-film resonators (S11,S12,S13,S14,P11,P12,P13,P14) each having a substrate (11), a lower electrode (13) formed on the substrate (11), a piezoelectric film (14) formed on the lower electrode (13), and an upper electrode (15) provided on the piezoelectric film (14) so that the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14).
The piezoelectric thin-film resonator (S11,S12,S13,S14,P11,P12,P13,P14) are of two types:
a) a first type (S11,S14,P11,P14) where at least a part (28) of an outer curved portion of the piezoelectric film (14) is located further out than an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14); and
b) a second type (Sl2,S13,P12,P13) in which at least a part of an outer curved portion of the piezoelectric film (14) coincides with an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14) or is further inside the outer curved portion (26) of the region (24).

公开(公告)号：EP1850479A2

公开(公告)日：2007-10-31

申请号：EP07106274.9

申请日：2007-04-16

申请人： Fujitsu Media Devices Limited ,  Fujitsu Ltd.

发明人： Nishihara, Tokihiro ,  Taniguchi, Shinji ,  Iwaki, Masafumi ,  Yokoyama, Tsuyoshi ,  Sakashita, Takeshi ,  Ueda, Masanori ,  Saitou, Yasuyuki

IPC分类号： H03H9/56 ,  H03H9/70 ,  H03H9/02

CPC分类号： H03H9/564 ,  H03H9/568

摘要： A filter includes piezoelectric thin-film resonators (P1 to P4, S1 to S4) having a substrate (10), a lower electrode (12) supported by the substrate (10), a piezoelectric film (14) provided on the lower electrode, and an upper electrode (16) provided on the piezoelectric film (14). At least one of the piezoelectric thin-film resonators has a portion (22) in which the upper electrode (16) overlaps the lower electrode (12) across the piezoelectric film. The above portion has a shape different from shapes of corresponding portions of other piezoelectric thin-film resonators, so that a spurious component in the above at least one of the piezoelectric thin-film resonators occur at a frequency different from frequencies of spurious components that occur in the other piezoelectric thin-film resonators.

摘要翻译： 滤波器包括具有基板（10）的压电薄膜谐振器（P1至P4，S1至S4），由基板（10）支撑的下电极（12），设置在下电极上的压电薄膜（14） 和设置在压电膜（14）上的上电极（16）。 至少一个压电薄膜谐振器具有其中上电极（16）跨越压电薄膜与下电极（12）重叠的部分（22）。 上述部分具有与其它压电薄膜谐振器的相应部分的形状不同的形状，使得上述至少一个压电薄膜谐振器中的杂散分量以与发生的杂散分量的频率不同的频率出现 在其他压电薄膜谐振器中。

公开(公告)号：EP1850478A3

公开(公告)日：2009-12-02

申请号：EP07106869.6

申请日：2007-04-24

申请人： Fujitsu Media Devices Limited ,  Fujitsu Ltd.

发明人： Iwaki, Masafumi ,  Tsutsumi, Jun ,  Nishihara, Tokihiro ,  Yokoyama, Tsuyoshi ,  Sakashita, Takeshi ,  Taniguchi, Shinji ,  Ueda, Masanori ,  Endo, Go

IPC分类号： H03H9/17 ,  H03H9/02

CPC分类号： H03H9/174 ,  H03H3/04 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/132 ,  H03H9/605

摘要： A piezoelectric thin-film resonator includes a substrate (10), a lower electrode (12) provided on the substrate (10), a piezoelectric film (14) provided on the lower electrode (12), and an upper electrode (16) provided on the piezoelectric film (14) so as to have a portion that overlaps the lower electrode (12) across the piezoelectric film (14). At least a part of an outer end of the piezoelectric film (14) is further in than an outer end of an opposing region in which the upper and lower electrodes overlap each other across the piezoelectric film (14).

公开(公告)号：EP1863173A2

公开(公告)日：2007-12-05

申请号：EP07109239.9

申请日：2007-05-30

申请人： Fujitsu Ltd.

发明人： Taniguchi, Shinji ,  Yokoyama, Tsuyoshi ,  Hara, Motoaki ,  Sakashita, Takeshi ,  Tsutsumi, Jun ,  Iwaki, Masafumi ,  Nishihara, Tokihiro ,  Ueda, Masanori ,  Ehara, Hisanori

IPC分类号： H03H3/02 ,  H03H9/58 ,  H03H9/02

CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02141 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021

摘要： A filter includes multiple piezoelectric thin-film resonators (S11,S12,S13,S14,P11,P12,P13,P14) each having a substrate (11), a lower electrode (13) formed on the substrate (11), a piezoelectric film (14) formed on the lower electrode (13), and an upper electrode (15) provided on the piezoelectric film (14) so that the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14).
The piezoelectric thin-film resonator (S11,S12,S13,S14,P11,P12,P13,P14) are of two types:
a) a first type (S11,S14,P11,P14) where at least a part (28) of an outer curved portion of the piezoelectric film (14) is located further out than an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14); and
b) a second type (Sl2,S13,P12,P13) in which at least a part of an outer curved portion of the piezoelectric film (14) coincides with an outer curved portion (26) of a region (24) in which the upper electrode (15) and the lower electrode (13) face each other across the piezoelectric film (14) or is further inside the outer curved portion (26) of the region (24).

摘要翻译： 滤波器包括各自具有基板（11），形成在基板（11）上的下部电极（13），压电体（11），压电元件（13），压电元件 形成在下电极（13）上的膜（14）和设置在压电膜（14）上的上电极（15），使得上电极（15）和下电极（13）跨越压电膜 （14）。 压电薄膜谐振器（S11，S12，S13，S14，P11，P12，P13，P14）有两种类型：a）第一类型（S11，S14，P11，P14），其中至少一部分（28） 所述压电膜（14）的外部弯曲部分的位置比所述上部电极（15）和所述下部电极（13）的所述区域（24）的外部弯曲部分（26）位于所述外部弯曲部分 压电薄膜（14）; 和b）压电膜（14）的外弯曲部分的至少一部分与区域（24）的外弯曲部分（26）重合的第二类型（Sl2，S13，P12，P13），其中 上电极（15）和下电极（13）跨越压电膜（14）彼此面对，或者进一步在区域（24）的外弯曲部分（26）的内部。